MCH6412 Ordering number : ENA0448 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6412 General-Purpose Switching Device Applications Features • • Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±10 V 5 A Drain Current (DC) ID V Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Ratings min typ Unit max 30 V 1 µA ±10 µA Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 Forward Transfer Admittance IGSS VGS(off) yfs VDS=10V, ID=3A 4.4 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=3A, VGS=4V ID=1.5A, VGS=2.5V Input Capacitance RDS(on)3 Ciss 790 pF 125 pF 110 pF Cutoff Voltage 1.3 7.4 V S 31 41 mΩ 40 57 mΩ 55 90 mΩ Output Capacitance Coss ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss VDS=10V, f=1MHz Turn-ON Delay Time td(on) tr See specified Test Circuit. 16.5 ns See specified Test Circuit. 78 ns td(off) tf See specified Test Circuit. 77 ns See specified Test Circuit. 125 ns Rise Time Turn-OFF Delay Time Fall Time Marking : KL Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006PE MS IM TB-00002099 No. A0448-1/4 MCH6412 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=10V, VGS=4V, ID=5A VDS=10V, VGS=4V, ID=5A 7.0 Gate-to-Source Charge 1.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=5A 1.9 Diode Forward Voltage VSD IS=5A, VGS=0V Package Dimensions unit : mm 7022A-009 0.25 2.0 5 1.2 V Switching Time Test Circuit VDD=15V VIN 6 nC 0.86 4V 0V 0.15 ID=3A RL=5Ω VIN 4 D 2.1 1.6 VOUT PW=10µs D.C.≤1% 0 to 0.02 G 2 3 0.65 0.3 MCH6412 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 ID -- VDS V V VDS=10V 9 8 VGS=1.5V 3 2 7 6 5 25°C 4 Drain Current, ID -- A 8.0V 4 3 2 1 Ta= 7 Drain Current, ID -- A 5 1 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 0 1.0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V IT11180 RDS(on) -- VGS 140 2.5 IT11181 RDS(on) -- Ta 100 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ S ID -- VGS 10 1.8 2.0 4.0V 2.5V 6.0V 6 50Ω 5°C 0.07 0.85 P.G --25°C 0.25 1 120 1.5A 100 ID=0.3A 80 3.0A 60 40 20 0 0 2 4 6 Gate-to-Source Voltage, VGS -- V 10 IT11241 80 V =1.8 , V GS 0.3A 60 I D= =2.5V , VGS A 5 . 1 I D= =4.0V A, V GS .0 3 = ID 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT11183 No. A0448-2/4 MCH6412 yfs -- ID 10 7 5 °C -25 =a T C 75° 3 2 C 25° 1.0 7 5 3 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT11184 Drain Current, ID -- A 0 3 Ciss, Coss, Crss -- pF td(off) tf 5 tr 3 td(on) 2 3 5 7 2 1.0 3 5 1000 Ciss 7 5 3 2 Coss Crss 3.0 2.5 2.0 1.5 1.0 10 7 5 3 4 5 6 Total Gate Charge, Qg -- nC 7 IT11188 15 20 25 30 IT11187 ASO ≤10µs 1 1m 00 s µs IDP=20A ID=5A DC 3 2 1.0 7 5 10 10 ms 0 op era ms tio n( Ta = Operation in this area is limited by RDS(on). 3 2 25 °C ) 0.1 7 5 3 2 0.5 2 10 Drain-to-Source Voltage, VDS -- V 3 2 1 5 5 0 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT11231 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 0 10 IT11186 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 VGS -- Qg 0 1.2 IT11185 5 2 VDS=10V ID=5A 3.5 1.0 100 Drain Current, ID -- A 4.0 0.8 f=1MHz 7 10 0.1 0.6 2 2 7 0.4 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=4V 100 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns VGS=0V Ta=7 5°C 25°C --25°C 2 IS -- VSD 10 7 5 VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 1.6 1.5 1.4 M ou nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d( 90 0.6 0m m2 ✕ 0.4 0.8 m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT111232 No. A0448-3/4 MCH6412 Note on usage : Since the MCH6412 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0448-4/4