MCH6626
MCH6626
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
unit : mm
2173A
[MCH6626]
0.3
4
5
6
3 2
0.65
1
0.15
0.07
0.25
2.1
•
The MCH6626 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
high-density mounting.
Excellent ON-resistance characteristic.
2.5V drive.
0.25
•
Package Dimensions
1.6
Features
•
Ordering number : ENN7918
2.0
6
5
4
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.85
(Bottom view)
Specifications
SANYO : MCPH6
(Top view)
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
Conditions
N-channel
VDSS
VGSS
ID
IDP
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
P-channel
Unit
20
--20
V
±10
±10
V
1.6
--1.0
A
6.4
--4.0
A
0.8
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
ID=1mA, VGS=0
20
IGSS
VGS(off)
VGS=±8V, VDS=0
VDS=10V, ID=1mA
0.4
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=0.8A
1.4
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
1
µA
±10
µA
1.3
2.4
V
S
ID=0.8A, VGS=4V
180
230
mΩ
ID=0.4A, VGS=2.5V
220
310
mΩ
ID=0.1A, VGS=1.8V
300
450
mΩ
Marking : WA
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
V
VDS=20V, VGS=0
Continued on next page.
www.onsemi.com
Rev.0 I Page
1 of 6 I www.onsemi.com
Publication Order Number:
MCH6626/D
MCH6626
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Ratings
Conditions
min
typ
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Unit
max
105
pF
23
pF
VDS=10V, f=1MHz
See specified Test Circuit.
15
pF
6
ns
See specified Test Circuit.
16
ns
See specified Test Circuit.
19
ns
See specified Test Circuit.
8
ns
1.4
nC
0.3
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=1.6A
VDS=10V, VGS=4V, ID=1.6A
VDS=10V, VGS=4V, ID=1.6A
Diode Forward Voltage
VSD
IS=1.6A, VGS=0
0.3
0.92
nC
1.2
V
--1
µA
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
VGS(off)
yfs
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--500mA
RDS(on)1
RDS(on)2
ID=--500mA, VGS=--4V
ID=--300mA, VGS=--2.5V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
ID=--1mA, VGS=0
VDS=--20V, VGS=0
--20
0.7
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
ns
See specified Test Circuit.
6
ns
See specified Test Circuit.
15
ns
See specified Test Circuit.
7
ns
1.5
nC
0.4
nC
IS=--1A, VGS=0
0.3
--0.9
Electrical Connection
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
[P-channel]
VDD=10V
VDD= --10V
VIN
0V
--4V
ID=800mA
RL=12.5Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
ID= --500mA
RL=20Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
G
MCH6626
P.G
50Ω
S
mΩ
pF
VSD
VIN
760
8
Diode Forward Voltage
4V
0V
540
S
15
Qgd
Switching Time Test Circuit
[N-channel]
mΩ
VDS=--10V, f=1MHz
See specified Test Circuit.
Gate-to-Drain “Miller” Charge
Top view
500
pF
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
3
380
pF
Qg
2
V
1.2
23
Qgs
1
µA
115
Gate-to-Source Charge
5
±10
--1.3
--0.4
Total Gate Charge
6
V
MCH6626
P.G
50Ω
Rev.0 I Page 2 of 6 I www.onsemi.com
S
nC
--1.5
V
MCH6626
--4.
0
V
2.5
3.0V
Drain Current, ID -- A
4 .0 V
V
6.0V
1.5
0V
--0.7
.
--2
--0.6
--0.5
--0.4
--0.3
VGS= --1.5V
--0.2
0.4
VGS=1.0V
--0.1
0
Drain-to-Source Voltage, VDS -- V
1.0
--2
5°C
25 7
°C 5°C
[Nch]
VDS=10V
--2.0
--1.6
Drain Current, ID -- A
1.6
1.4
1.2
1.0
0.8
Ta=
7
5°C
--25
°C
0.6
--1.2
--1.0
--0.8
--0.6
--0.2
25
25
0.2
--1.4
--0.4
°C
0.4
VDS= --10V
--1.8
Ta=
1.8
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V
IT03368
ID -- VGS
[Pch]
0
IT02916
ID -- VGS
2.0
0.9
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Gate-to-Source Voltage, VGS -- V
2.0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
IT02917
RDS(on) -- VGS
400
1.8
[Nch]
RDS(on) -- VGS
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
350
ID=0.4A
0.8A
300
250
200
150
100
50
2
4
6
8
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
700
ID= --0.3A --0.5A
600
500
400
300
200
100
350
300
2.5V
S=
VG
,
0.4A
4.0V
I D=
S=
VG
,
A
.8
I D=0
250
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
--2
--4
--6
--8
Gate-to-Source Voltage, VGS -- V
0
IT03305
[Nch]
140
160
[Pch]
Ta=25°C
800
10
RDS(on) -- Ta
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
3.0
IT03369
900
0
0
0
°C
0.8
°C
0.7
75
0.6
--2
5
0.5
25
0.4
Ta
=
0.3
75
°C
°C --25
°C
0.2
Ta
=
0.1
0
°C
0
Drain Current, ID -- A
[Pch]
--0.8
8V
1.
V
0.8
ID -- VDS
--1.0
--0.9
10.0
Drain Current, ID -- A
1.6
1.2
[Nch]
V
--3
.0V
--2
.5V
ID -- VDS
2.0
--10
IT03370
[Pch]
900
800
700
.5V
--2
S=
A, VG
--0.3
I D=
600
V
= --4.0
, V GS
500
0.5A
I D= --
400
300
200
100
0
--60
IT03306
Rev.0 I Page 3 of 6 I www.onsemi.com
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT03371
yfs -- ID
10
7
5
[Nch]
VDS=10V
3
2
C
25°
1.0
7
5
C
5°
=
Ta
3
2
--2
C
5°
7
0.1
7
5
3
2
0.01
0.001
2 3
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Drain Current, ID -- A
Ta=
--25
°C
C
75°
5
3
2
0.1
--0.01
2
3
5
7
2
--0.1
3
5
Drain Current, ID -- A
[Nch]
7 --1.0
IT03372
IF -- VSD
--10
7
5
[Pch]
VGS=0
0.4
0.5
0.6
3
2
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
--0.01
--0.2
1.2
[Nch]
tr
td(off)
2
tf
10
7
td(on)
5
3
2
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT03373
SW Time -- ID
[Pch]
VDD= --10V
VGS= --4V
2
3
--0.5
3
Switching Time, SW Time -- ns
5
--0.4
Diode Forward Voltage, VSD -- V
VDD=10V
VGS=4V
7
--0.3
IT02921
SW Time -- ID
100
2
--0.1
7
5
100
7
5
3
tr
0.3
3
--25°C
5°C
25°
C
--25
°C
0.1
7
5
--1.0
7
5
25°C
3
2
2
Ta=
75°C
Forward Current, IF -- A
1.0
7
5
Ta=
7
Forward Current, IF -- A
7
3
0.01
0.2
Switching Time, SW Time -- ns
C
25°
1.0
VGS=0
3
2
td(off)
2
td(on)
10
7
tf
5
3
2
1.0
1.0
0.1
2
3
5
7
2
1.0
3
Drain Current, ID -- A
5
2
--0.1
IT02922
Ciss, Coss, Crss -- VDS
1000
[Nch]
3
5
7
--1.0
Drain Current, ID -- A
2
3
IT03374
Ciss, Coss, Crss -- VDS
3
f=1MHz
7
[Pch]
f=1MHz
2
5
3
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
VDS= --10V
5
3
2
[Pch]
2
IT02920
IF -- VSD
10
7
5
yfs -- ID
3
Forward Transfer Admittance, yfs -- S
Forward Transfer Admittance, yfs -- S
MCH6626
2
Ciss
100
7
5
3
Coss
2
Ciss
100
7
5
3
Coss
2
Crss
Crss
10
10
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
0
--2
IT02923
Rev.0 I Page 4 of 6 I www.onsemi.com
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT03375
MCH6626
VGS -- Qg
VDS=10V
ID=1.6A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
--2.5
--2.0
--1.5
--1.0
--0.5
0
IDP=6.4A
7
5
10
0m
s
op
era
tio
3
2
n
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
2
3
5
7 1.0
2
3
5
7
0.8
s
ed
on
ac
bo
ar
d(
--0.1
7
5
--0.1
0m
.8m
m
)1
un
it
0
20
40
60
80
100
120
Ambient Tamperature, Ta -- °C
140
n
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
m2
✕0
0
s
tio
90
0.2
0m
op
Operation in this
area is limited by RDS(on).
am
0.4
10
era
er
ic
ms
DC
nt
0.6
1.6
IT03376
10
3
2
--0.01
3
1.4
<10µs
ID= --1.0A
M
ou
1.2
1m
IT03308
Drain-to-Source Voltage, VDS -- V
[Pch, Nch]
PD -- Ta
1.0
1.0
IDP= --4.0A
7
5
2
2
10
--1.0
3
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
0.01
0.1
0.8
3
2
ms
DC
0.6
ASO
--10
10
1.0
7
5
0.4
Total Gate Charge, Qg -- nC
<10µs
10
1m 0µs
s
ID=1.6A
0.2
IT03307
Drain Current, ID -- A
Drain Current, ID -- A
--3.0
1.6
ASO
10
7
5
Allowable Power Dissipation, PD -- W
VDS= --10V
--3.5 ID= --1A
0
0
3
2
VGS -- Qg
--4.0
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
4.0
160
IT02521
Rev.0 I Page 5 of 6 I www.onsemi.com
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT03377
MCH6626
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply
high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s
technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and
products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
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* 2/ / 1 MCH6626/D