MOTOROLA MCM6264CJ35R2 8k x 8 bit fast static ram Datasheet

MOTOROLA
Order this document
by MCM6264C/D
SEMICONDUCTOR TECHNICAL DATA
8K x 8 Bit Fast Static RAM
MCM6264C
The MCM6264C is fabricated using Motorola’s high–performance silicon–gate
CMOS technology. Static design eliminates the need for external clocks or timing
strobes, while CMOS circuitry reduces power consumption and provides for
greater reliability.
This device meets JEDEC standards for functionality and pinout, and is available in plastic dual–in–line and plastic small–outline J–leaded packages.
Single 5 V ± 10% Power Supply
Fully Static — No Clock or Timing Strobes Necessary
Fast Access Times: 12, 15, 20, 25, and 35 ns
Equal Address and Chip Enable Access Times
Output Enable (G) Feature for Increased System Flexibility and to
Eliminate Bus Contention Problems
• Low Power Operation: 110 – 150 mA Maximum AC
• Fully TTL Compatible — Three State Output
P PACKAGE
300 MIL PLASTIC
CASE 710B–01
•
•
•
•
•
BLOCK DIAGRAM
A2
VCC
VSS
A3
A4
A5
A7
ROW
DECODER
MEMORY MATRIX
256 ROWS x 32
x 9 COLUMNS
A8
A9
A11
DQ0
INPUT
DATA
CONTROL
DQ7
E1
E2
W
G
COLUMN I/O
COLUMN DECODER
A0 A1 A6 A10 A12
J PACKAGE
300 MIL SOJ
CASE 810B–03
PIN ASSIGNMENT
NC
1
28
VCC
A12
2
27
W
A7
3
26
E2
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
G
A2
8
21
A10
A1
9
20
E1
A0
10
19
DQ7
DQ0
11
18
DQ6
DQ1
12
17
DQ5
DQ2
13
16
DQ4
VSS
14
15
DQ3
PIN NAMES
A0 – A12 . . . . . . . . . . . . . Address Input
DQ0 – DQ7 . . . Data Input/Data Output
W . . . . . . . . . . . . . . . . . . . . Write Enable
G . . . . . . . . . . . . . . . . . . . Output Enable
E1, E2 . . . . . . . . . . . . . . . . . Chip Enable
VCC . . . . . . . . . . . Power Supply (+ 5 V)
VSS . . . . . . . . . . . . . . . . . . . . . . . Ground
REV 2
5/95
 Motorola, Inc. 1995
MOTOROLA
FAST SRAM
MCM6264C
1
TRUTH TABLE (X = Don’t Care)
E1
E2
G
W
Mode
VCC Current
Output
Cycle
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
X
X
H
H
L
Not Selected
Not Selected
Output Disabled
Read
Write
ISB1, ISB2
ISB1, ISB2
ICCA
ICCA
ICCA
High–Z
High–Z
High–Z
Dout
High–Z
—
—
—
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
VCC
– 0.5 to + 7.0
V
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current
Iout
± 20
mA
Power Dissipation
PD
1.0
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Power Supply Voltage
Voltage Relative to VSS for Any Pin
Except VCC
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to these high–impedance
circuits.
This CMOS memory circuit has been designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to +70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.0
5.5
V
Input High Voltage
VIH
2.2
—
VCC + 0.3**
V
Input Low Voltage
VIL
– 0.5*
—
0.8
V
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
—
±1
µA
Output Leakage Current (E1 = VIH, E2 = VIL, or G = VIH, Vout = 0 to VCC)
Ilkg(O)
—
±1
µA
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns)
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)
DC CHARACTERISTICS
Parameter
Output Low Voltage (IOL = 8.0 mA)
VOL
—
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
– 12
– 15
– 20
– 25
– 35
Unit
AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax)
ICCA
150
140
130
120
110
mA
AC Standby Current (E1 = VIH or E2 = VIL, VCC = Max, f = fmax)
ISB1
45
40
35
30
30
mA
Standby Current (E1 ≥ VCC – 0.2 V or E2 ≤ VSS + 0.2 V,
Vin ≤ VSS + 0.2 V or ≥ VCC – 0.2 V)
ISB2
20
20
20
20
20
mA
CAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Symbol
Max
Unit
Address Input Capacitance
Cin
6
pF
Control Pin Input Capacitance (E1, E2, G, W)
Cin
6
pF
I/O Capacitance
CI/O
7
pF
Parameter
MCM6264C
2
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V
Output Load . . . . . . . . . . . . See Figure 1A Unless Otherwise Noted
READ CYCLE (See Notes 1 and 2)
– 12
Parameter
– 15
– 20
– 25
– 35
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Read Cycle Time
tAVAV
12
—
15
—
20
—
25
—
35
—
ns
3
Address Access Time
tAVQV
—
12
—
15
—
20
—
25
—
35
ns
Enable Access Time
tELQV
—
12
—
15
—
20
—
25
—
35
ns
Output Enable Access Time
tGLQV
—
6
—
8
—
10
—
11
—
12
ns
Output Hold from Address Change
tAXQX
4
—
4
—
4
—
4
—
4
—
ns
Enable Low to Output Active
tELQX
4
—
4
—
4
—
4
—
4
—
ns
5, 6 ,7
Enable High to Output High–Z
tEHQZ
0
6
0
8
0
9
0
10
0
11
ns
5, 6, 7
Output Enable Low to Output Active
tGLQX
0
—
0
—
0
—
0
—
0
—
ns
5, 6, 7
Output Enable High to Output High–Z
tGHQZ
0
6
0
7
0
8
0
9
0
10
ns
5, 6, 7
Power Up Time
tELICCH
0
—
0
—
0
—
0
—
0
—
ns
Power Down Time
tEHICCL
—
12
—
15
—
20
—
25
—
35
ns
4
NOTES:
1. W is high for read cycle.
2. E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.
3. All timings are referenced from the last valid address to the first transitioning address.
4. Addresses valid prior to or coincident with E going low.
5. At any given voltage and temperature, tEHQZ (max) is less than tELQX (min), and tGHQZ (max) is less than tGLQX (min), both for a given
device and from device to device.
6. Transition is measured ± 500 mV from steady–state voltage with load of Figure 1B.
7. This parameter is sampled and not 100% tested.
8. Device is continuously selected (E1 = VIL, E2 = VIH, G = VIL).
TIMING LIMITS
AC TEST LOADS
+5V
480 Ω
OUTPUT
Z0 = 50 Ω
50 Ω
OUTPUT
255 Ω
5 pF
VL = 1.5 V
Figure 1A
MOTOROLA FAST SRAM
Figure 1B
The table of timing values shows either
a minimum or a maximum limit for each parameter. Input requirements are specified
from the external system point of view.
Thus, address setup time is shown as a
minimum since the system must supply at
least that much time (even though most
devices do not require it). On the other
hand, responses from the memory are
specified from the device point of view.
Thus, the access time is shown as a maximum since the device never provides data
later than that time.
MCM6264C
3
READ CYCLE 1 (See Note 8)
tAVAV
A (ADDRESS)
tAXQX
Q (DATA OUT)
PREVIOUS DATA VALID
DATA VALID
tAVQV
READ CYCLE 2 (See Note 4)
tAVAV
A (ADDRESS)
tAVQV
tELQV
E (CHIP ENABLE)
tEHQZ
tELQX
G (OUTPUT ENABLE)
tGHQZ
tGLQV
tGLQX
Q (DATA OUT)
VCC ICC
SUPPLY
CURRENT ISB
MCM6264C
4
HIGH–Z
tELICCH
HIGH–Z
DATA VALID
tEHICCL
MOTOROLA FAST SRAM
WRITE CYCLE 1 (W Controlled, See Notes 1, 2, and 3)
– 12
Parameter
Write Cycle Time
– 15
– 20
– 25
– 35
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
tAVAV
12
—
15
—
20
—
25
—
35
—
ns
4
Address Setup Time
tAVWL
0
—
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
tAVWH
10
—
12
—
15
—
17
—
20
—
ns
Write Pulse Width
tWLWH,
tWLEH
10
—
12
—
15
—
17
—
20
—
ns
Write Pulse Width, G High
tWLWH,
tWLEH
8
—
10
—
12
—
15
—
17
—
ns
Data Valid to End of Write
tDVWH
6
—
7
—
8
—
10
—
12
—
ns
Data Hold Time
tWHDX
0
—
0
—
0
—
0
—
0
—
ns
Write Low to Output High–Z
tWLQZ
0
6
0
7
0
8
0
10
0
12
ns
6, 7, 8
Write High to Output Active
tWHQX
4
—
4
—
4
—
4
—
4
—
ns
6, 7, 8
5
Write Recovery Time
tWHAX
0
—
0
—
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.
3. If G goes low coincident with or after W goes low, the output will remain in a high impedance state.
4. All timings are referenced from the last valid address to the first transitioning address.
5. If G ≥ VIH, the output will remain in a high impedance state.
6. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.
7. Transition is measured ± 500 mV from steady–state voltage with load of Figure 1B.
8. This parameter is sampled and not 100% tested.
WRITE CYCLE 1 (W Controlled, See Notes 1, 2, and 3)
tAVAV
A (ADDRESS)
tWHAX
tAVWH
E (CHIP ENABLE)
tWLWH
tWLEH
W (WRITE ENABLE)
tDVWH
tAVWL
D (DATA IN)
DATA VALID
tWLQZ
Q (DATA OUT)
MOTOROLA FAST SRAM
tWHDX
HIGH–Z
tWHQX
HIGH–Z
MCM6264C
5
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)
– 12
Parameter
– 15
– 20
– 25
– 35
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
12
—
15
—
20
—
25
—
35
—
ns
3
Address Setup Time
tAVEL
0
—
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
tAVEH
12
—
12
—
15
—
20
—
25
—
ns
Enable to End of Write
tELEH,
tELWH
10
—
10
—
12
—
15
—
25
—
ns
Write Pulse Width
tWLEH
10
—
12
—
15
—
17
—
20
—
ns
Data Valid to End of Write
tDVEH
7
—
7
—
8
—
10
—
15
—
ns
Data Hold Time
tEHDX
0
—
0
—
0
—
0
—
0
—
ns
Write Recovery Time
tEHAX
0
—
0
—
0
—
0
—
NOTES:
1. A write occurs during the overlap of E low and W low.
2. E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.
3. All timings are referenced from the last valid address to the first transitioning address.
4. If E goes low coincident with or after W goes low, the output will remain in a high impedance state.
5. If E goes high coincident with or before W goes high, the output will remain in a high impedance state.
0
—
ns
4, 5
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)
tAVAV
A (ADDRESS)
tAVEH
E (CHIP ENABLE)
tAVEL
tWLEH
tELEH
tELWH
tEHAX
W (WRITE ENABLE)
tDVEH
D (DATA IN)
tEHDX
DATA VALID
HIGH–Z
Q (DATA OUT)
ORDERING INFORMATION
(Order by Full Part Number)
MCM
6264C
X
XX
XX
Motorola Memory Prefix
Shipping Method (R2 = Tape and Reel, Blank = Rails)
Part Number
Speed (12 = 12 ns, 15 = 15 ns, 20 = 20 ns,
25 = 25 ns, 35 = 35 ns)
Package (P = 300 mil Plastic, J = 300 mil SOJ)
Full Part Numbers — MCM6264CP12
MCM6264CP15
MCM6264CP20
MCM6264CP25
MCM6264CP35
MCM6264C
6
MCM6264CJ12
MCM6264CJ15
MCM6264CJ20
MCM6264CJ25
MCM6264CJ35
MCM6264CJ12R2
MCM6264CJ15R2
MCM6264CJ20R2
MCM6264CJ25R2
MCM6264CJ35R2
MOTOROLA FAST SRAM
PACKAGE DIMENSIONS
28 LEAD
300 MIL PDIP
CASE 710B–01
-A-
28
15
1
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION A AND B DOES NOT INCLUDE MOLD
FLASH. MAXIMUM MOLD FLASH 0.25 (0.010).
-B-
DIM
A
B
C
D
E
F
G
J
K
L
M
N
L
C
-T-
K
SEATING
PLANE
E
F
N
G
D 28 PL
0.25 (0.010)
M
J 28 PL
M
T A
0.25 (0.010)
S
T B
M
MILLIMETERS
MIN
MAX
34.55 34.79
7.12
7.62
3.81
4.57
0.39
0.53
1.27 BSC
1.15
1.39
2.54 BSC
0.21
0.30
3.18
3.42
7.62 BSC
0°
15°
0.51
1.01
INCHES
MIN
MAX
1.360 1.370
0.280 0.300
0.150 0.180
0.015 0.021
0.050 BSC
0.045 0.055
0.100 BSC
0.008 0.012
0.125 0.135
0.300 BSC
0°
15°
0.020 0.040
S
28 LEAD
300 MIL SOJ
CASE 810B–03
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. DIMENSION A & B DO NOT INCLUDE MOLD
PROTRUSION. MOLD PROTRUSION SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
3. CONTROLLING DIMENSION: INCH.
4. DIM R TO BE DETERMINED AT DATUM -T-.
5. 810B-01 AND -02 OBSOLETE, NEW STANDARD
810B-03.
F
DETAIL Z
28
15
N
1
D 24 PL
14
0.18 (0.007)
-A-
M
T A
0.18 (0.007)
H BRK
S
S
T B
S
P
-B-
L
G
M
M
E
C
0.10 (0.004)
K
DETAIL Z
-T-
SEATING PLANE
S RAD
R
0.25 (0.010)
S
T B
S
DIM
A
B
C
D
E
F
G
H
K
L
M
N
P
R
S
MILLIMETERS
MIN
MAX
18.29 18.54
7.74
7.50
3.75
3.26
0.50
0.39
2.48
2.24
0.81
0.67
1.27 BSC
0.50
—
1.14
0.89
0.64 BSC
0°
10°
1.14
0.76
8.64
8.38
6.86
6.60
1.01
0.77
INCHES
MIN
MAX
0.720 0.730
0.295 0.305
0.128 0.148
0.015 0.020
0.088 0.098
0.026 0.032
0.050 BSC
0.020
—
0.035 0.045
0.025 BSC
0° 10°
0.030 0.045
0.330 0.340
0.260 0.270
0.030 0.040
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MOTOROLA FAST SRAM
MCM6264C
7
Literature Distribution Centers:
USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MCM6264C
8
◊
CODELINE TO BE PLACED HERE
*MCM6264C/D*
MCM6264C/D
MOTOROLA FAST
SRAM
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