Renesas MCR01MZPJ5R6 Npn sige rf transistor for low noise, high-gain Datasheet

Preliminary Data Sheet
NESG3033M14
R09DS0049EJ0300
Rev.3.00
Sep 14, 2012
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
FEATURES
• The NESG3033M14 is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• This product is improvement of ESD of NESG3032M14.
• 4-pin lead-less minimold (M14, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
Order Number
NESG3033M14
NESG3033M14-A
Package
Quantity
4-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M14, 1208 PKG)
(Non reel)
• Pin 1 (Collector), Pin 4 (NC) face the
(Pb-Free)
NESG3033M14-T3 NESG3033M14-T3-A
Supplying Form
perforation side of the tape
10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Symbol
VCBO
Note 1
Unit
5.0
V
4.3
V
Note 1
12
mA
Collector Current
IC
35
mA
Total Power Dissipation
Note 2
150
mW
Base Current
VCEO
Ratings
IB
Ptot
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. VCBO and IB are limited by the permissible current of the protection element.
2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 1 of 14
NESG3033M14
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Input Power
Pin
−
−
0
dBm
Base Feedback Resister
Rb
−
−
100
kΩ
Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the
ESD protection element is turned on when recommended range of motion in the above table is exceeded.
However, there is no influence of reliability, including deterioration.
Rb
Bias
Choke
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 2 of 14
NESG3033M14
<R>
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
−
−
100
nA
VCE = 2 V, IC = 6 mA
220
300
380
−
⏐S21e⏐
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
15.0
17.5
−
dB
Noise Figure
NF
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.60
0.85
dB
Associated Gain
Ga
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
17.5
−
dB
VCB = 2 V, IE = 0, f = 1 MHz
−
0.15
0.25
pF
DC Current Gain
hFE
Note 1
RF Characteristics
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note 3
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
17.5
20.5
−
dB
−
12.5
−
dBm
−
24.0
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
<R>
S21
S12
hFE CLASSIFICATION
Rank
FB/YFB
Marking
zL
hFE Value
220 to 380
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 3 of 14
NESG3033M14
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0
25
50
75
100
125
0.3
f = 1 MHz
0.2
0.1
0
150
1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Collector Current IC (mA)
100
VCE = 1 V
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
VCE = 3 V
200 μ A
35
10
1
0.1
0.01
0.001
30
180 μ A
160 μ A
140 μ A
25
120 μ A
20
100 μ A
80 μ A
15
60 μ A
10
40 μ A
5
0.5
0.9
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Collector Current IC (mA)
VCE = 2 V
1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.0001
0.4
5
10
Base to Emitter Voltage VBE (V)
100
4
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
0.0001
0.4
3
Collector to Base Voltage VCB (V)
Ambient Temperature TA (˚C)
100
2
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
0
IB = 20 μ A
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 4 of 14
NESG3033M14
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
0.1
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 1 V
1
10
100
100
10
0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
DC Current Gain hFE
VCE = 3 V
100
10
0.1
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 5 of 14
NESG3033M14
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product fT (GHz)
VCE = 1 V
f = 2 GHz
25
20
15
10
5
0
1
10
20
15
10
5
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
10
5
10
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
0
1
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
15
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
25
40
VCE = 1 V
IC = 15 mA
35
30
MSG
MAG
25
20
15
MAG
MSG
|S21e|2
10
5
0
0.1
1
10
100
Collector Current IC (mA)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 2 V
IC = 15 mA
35
MSG
MAG
25
MAG
20
MSG
|S21e|2
10
5
0
0.1
20
Collector Current IC (mA)
VCE = 3 V
f = 2 GHz
15
25
Collector Current IC (mA)
30
30
VCE = 2 V
f = 2 GHz
0
1
100
1
10
100
Frequency f (GHz)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Gain Bandwidth Product fT (GHz)
30
40
VCE = 3 V
IC = 15 mA
35
30
MSG
MAG
25
MAG
20
15
MSG
|S21e|2
10
5
0
0.1
1
10
100
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 6 of 14
NESG3033M14
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 1 V
f = 0.5 GHz
25
MSG
|S21e|2
20
15
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
30
25
VCE = 1 V
f = 1 GHz
MSG
MAG
20
|S21e|2
15
10
5
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 1 V
f = 2 GHz
MSG
MAG
20
15
|S21e|2
10
5
0
25
20
1
10
100
30
25
VCE = 1 V
f = 3 GHz
MSG
20
MAG
15
|S21e|2
10
5
0
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
VCE = 1 V
f = 5 GHz
15
MAG
10
|S21e|2
5
0
–5
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
2
Insertion Power Gain |S21e| (dB)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
MSG
f = 0.5 GHz
25
|S21e|2
20
15
10
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 7 of 14
NESG3033M14
25
VCE = 2 V
f = 1 GHz
MSG
2
|S21e|
20
15
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 2 V
f = 2 GHz
MSG
MAG
20
|S21e|2
15
10
5
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
VCE = 2 V
f = 3 GHz
MSG
MAG
20
15
2
|S21e|
10
5
0
30
25
1
10
100
25
VCE = 2 V
f = 5 GHz
20
15
MAG
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
MSG
2
|S21e|
15
10
5
0
30
Collector Current IC (mA)
VCE = 3 V
f = 0.5 GHz
20
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Collector Current IC (mA)
1
10
100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
2
Insertion Power Gain |S21e| (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 1 GHz
MSG
20
|S21e|2
15
10
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 8 of 14
NESG3033M14
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 2 GHz
MSG
MAG
20
|S21e|2
15
10
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 3 GHz
MSG
20
MAG
15
|S21e|2
10
5
0
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
2
Insertion Power Gain |S21e| (dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
VCE = 3 V
f = 5 GHz
20
15
MAG
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 9 of 14
NESG3033M14
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
50
40
15
Pout
30
10
5
20
IC
10
0
–5
–20
–15
–10
–5
Collector Current IC (mA)
Output Power Pout (dBm)
VCE = 3 V, f = 2 GHz
Icq = 20 mA (RF OFF)
0
5
0
Input Power Pin (dBm)
Measuring method : Measured at power matched with external sleeve tuner. (The load resistance is not inserted
between the base DC power supply and Bias Tee.)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Ga
3
15
2
10
1
5
NF
0
1
Associated Gain Ga (dB)
20
4
VCE = 2 V
f = 2 GHz
10
0
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 10 of 14
NESG3033M14
EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA)
GND
VCC
IN
R3
C3
C4
R1
C1
R2
L2
C2
L1
Tr. (NESG3033M14)
NESG3033M14
GPS_LNA
Notes 1. 15 × 24 mm, t = 0.2 mm double sided copper clad glass epoxy PWB.
2. Au plated on pattern
3.
: Through holes
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 11 of 14
NESG3033M14
<R>
EVALUATION CIRCUIT (f = 1.575 GHz LNA)
VCC
3V
C3
R1
C1
10 000 pF
R3
62 Ω
R2
5.6 Ω
L2
3.9 nH
C4
10 000 pF
C2
82 kΩ
OUT
L1
6 pF
IN
10 000 pF
5.6 nH
Microstrip
W = 0.15 mm
L = 0.5 mm
×2
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
<R>
COMPONENT LIST
Symbol
Parts
Part Number
C1, C3, C4
Chip Capacitor
GRM155B31H103KA88
Murata
10 000 pF
C2
Chip Capacitor
GRM1552C1H6R0DZ01
Murata
6 pF
L1
Chip Inductor
AML1005H5N6STS
FDK
5.6 nH
L2
Chip Inductor
AML1005H3N9STS
FDK
3.9 nH
R1
Chip Resistor
MCR01MZPJ823
ROHM
82 kΩ
R2
Chip Resistor
MCR01MZPJ5R6
ROHM
5.6 Ω
R3
Chip Resistor
MCR01MZPJ620
ROHM
62 Ω
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Maker
Value
Page 12 of 14
NESG3033M14
EXAMPLE OF CHARACTERISTICS FOR 1.575 GHz LNA EVALUATION BOARD
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3 V, IC = 6.1 mA, f = 1.575 GHz)
Parameter
Symbol
Value
Unit
Noise Figure
NF
0.72
dB
Gain
Ga
17.3
dB
Input Return Loss
RLin
10.3
dB
Output Return Loss
RLout
14.2
dB
PO (1 dB)
−0.3
dBm
IIP3
0.7
dBm
Gain 1 dB Compression Output Power
Input 3rd Order Distortion Interception Point
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
15
25
VCC = 3 V, f = 1.575 GHz
Icq = 6.1 mA (RF OFF)
10
20
5
15
Pout
0
10
IC
–5
5
–10
–25
0
5
–20
–15
–10
–5
0
Collector Current IC (mA)
Note
Output Power POUT (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Output Power Pout (dBm)
<R>
OUTPUT POWER, IM3 vs. INPUT POWER
40
20
VCC = 3 V, IC = 6.1 mA
f1in = 1.575 GHz,
f2in = 1.576 GHz
0
POUT
−20
−40
IM3
−60
IIP3 = 0.7 dBm
−80
−30
Input Power Pin (dBm)
−20
−10
0
10
Input Power Pin (dBm)
Note A current increase is seen because the ESD protection element is turned on.
However, there is no influence of deterioration etc. on reliability.
Remark The graph indicates nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 13 of 14
NESG3033M14
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm)
1.0±0.05
0.15±0.05
2
(Bottom View)
1
4
0.8
zL
3
0.8+0.07
–0.05
1.2+0.07
–0.05
0.2
0.11+0.1
–0.05
0.2
0.5±0.05
<R>
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Note
NC (Connected with Pin 2)
Note A NC pin is Non-connection in the mold package (When NC-pin is open state, It will get an influences of floating
capacitance. Therefore, we recommend that NC pin connect to Emitter pin).
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 14 of 14
Revision History
NESG3033M14 Data Sheet
Description
Rev.
Date
Page
Summary
1.00
Jul 19, 2005
–
First edition issued
2.00
Sep 11, 2007
–
Second edition issued
3.00
Sep 14, 2012
Throughout
The company name is changed to Renesas Electronics Corporation.
p.1
Modification of ORDERING INFORMATION
p.3
Modification of ELECTRICAL CHARACTERISTICS
p.3
Modification of hFE CLASSIFICATION
p.10
Modification of method for obtaining S-parameters
p.12
Modification of EVALUTION CIRCUIT
p.12
Modification of COMPONENT LIST
p.13
Modification of EXAMPLE OF CHARACTERISTICS FOR f = 1.575 GHz LNA
EVALUATION BOARD
p.14
Modification of PACKAGE DIMENSIONS
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C-1
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1.
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6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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