Freescale MCZ33897AEF/R2 Single wire can transceiver Datasheet

Freescale Semiconductor
Advance Information
Document Number: MC33897
Rev. 15.0, 10/2006
Single Wire CAN Transceiver
33897/A/B/C/D/T
The 33897 Series provides a physical layer for digital
communications purposes using a Carrier Sense Multiple Access/
Collision Resolution (CSMA/CR) data link operating over a single
wire medium. This is more commonly referred to as Single Wire
Controller Area Network (CAN).
The 33897 Series operates directly from a vehicle's 12 V battery
system or a broad range of DC-power sources. It can operate at
either low or high (33.33 kbps or 83.33 kbps) data rates. A highvoltage wake-up feature allows the device to control the regulator
used in support of the MCU and other logic. The device includes a
control terminal that can be used to put the module regulator into
Sleep mode. The presence of a defined wake-up voltage level on the
bus will reactivate the control line to turn the regulator and the system
back on.
The device complies with the GMW3089v2.4 General Motors
Corporation specification.
SINGLE WIRE CAN
TRANSCEIVER
D SUFFIX
EF (PB-FREE) SUFFIX
98ASB42565B
14-TERMINAL SOICN
EF (PB-FREE) SUFFIX
98ASB42564B
8-TERMINAL SOICN
Features
•
•
•
•
•
•
•
•
Waveshaping for Low Electromagnetic Interference (EMI)
Detects and Automatically Handles Loss of Ground
Worst-Case Sleep Mode Current of Only 60 µA (75 µA on the 33897T)
Current Limit Prevents Damage Due to Bus Shorts
Built-In Thermal Shutdown on Bus Output
Protected Against Vehicular Electrical Transients
Undervoltage Lockout Prevents False Data with Low Battery
Pb-Free Packaging Designated by Suffix Code EF
ORDERING INFORMATION
Contains Lead
MC33897D/R2
Pb-Free
MC33897EF/R2
RoHS
Temperature
Range (TA)
Package
MCZ33897EF/R2
MCZ33897TEF/R2
MC33897AD/R2
MC33897AEF/R2
*MCZ33897CEF/R2
MC33897BEF/R2
- 40°C to 125°C
MCZ33897BEF/R2
*MCZ33897DEF/R2
*Recommended device for all new designs
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
14 SOICN
MCZ33897AEF/R2
8 SOICN
Power
Source
VCC
Voltage
Regulator
Battery
EN
VBATT
VCC
CNTL
TXD
RXD
MCU
BUS
MODE0
SWC BUS
LOAD
MODE1
GND
4
33897/A/C/T
Figure 1. 33897/A/C Simplified Application Diagram
VCC
Battery
VBATT
VCC
TXD
RXD
MCU
BUS
MODE0
SWC BUS
LOAD
MODE1
GND
33897B/D
Figure 2. 33897B/D Simplified Application Diagram
33897/A/B/C/D/T
2
Analog Integrated Circuit Device Data
Freescale Semiconductor
DEVICE VARIATIONS
DEVICE VARIATIONS
Table 1. Device Variations
Part No.
Load Voltage Sleep
Mode
33897
1.0 V Max
33897T
33897A
33897B
0.1 V Max
*33897C
*33897D
Other Significant Differences
See Page
•
14-Pin Package
8
•
14-Pin Package
6, 7, 8
•
Quiescent Current in Sleep Mode, 5.0V ∠ VΒΑΤΤ ∠ 13V, Typical - 55 µA,
Max - 75µA
•
ESD Voltage: Machine Model ±100V
•
14-Pin Package
•
Removes diode drop during Sleep Mode
•
May not detect Loss of Ground under certain module characteristics.
•
8-Pin Package
•
Removes diode drop during Sleep Mode
•
Does not include the CNTL terminal
•
May not detect Loss of Ground under certain module characteristics.
•
14-Pin Package
•
Removes diode drop during Sleep Mode
•
Effectively detects Loss of Ground
•
ESD Voltage: Human Body Model ±1500V, Machine Model ±100V
•
8-Pin Package
•
Removes diode drop during Sleep Mode
•
Effectively detects Loss of Ground
•
Does not include the CNTL terminal
•
ESD Voltage: Human Body Model ±1500V, Machine Model ±100V
8
2, 4, 6, 7, 8 ,13, 16
8
2, 4, 6, 7, 8 ,13, 16
*Recommended device for all new designs
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
3
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
TXD
BUSDRVR
DRVR
TX Bus
MODE0
MODE1
HV
WU E n
HVWU
Enable
Wa
ve Sha ping E nEnable
Waveshaping
Mode
Mode
Co
ntrol
Control
TX
Dat Data
a
TXD
BUS
Disab le
Disable
Bus
BUSRCVR
RCVR
HVWU
HV WU De
Detect
t
RX Dat
a
Disab
le
RXD
Data
Disable
TXD
RXD
Timers
Undervoltage
Detect
VBATT
BAT
Load Switch
LOAD
Timer
OSC
GND
CNTL
CNTL*
*CNTL terminal is present on 33897/A/C/T only.
Figure 3. 33897/A/B/C/D/T Simplified Internal Block Diagram
33897/A/B/C/D/T
4
Analog Integrated Circuit Device Data
Freescale Semiconductor
PIN CONNECTIONS
PIN CONNECTIONS
33897/A/C/T
GND
1
14
GND
TXD
2
13
NC
MODE0
3
12
MODE1
4
33897B/D
TXD
11
88
GND
BUS
MODE0
22
77
BUS
11
LOAD
MODE1
33
66
LOAD
RXD
5
10
VBATT
RXD
44
55
VBATT
NC
6
9
CNTL
GND
7
8
GND
Figure 4. 33897/A/B/C/D/T Pin Connections
Table 2. Pin Definitions
A functional description of each terminal can be found in the Functional Pin Description section, beginning on page 13.
33897/A/C/T
Terminal
33897B/D
Terminal
Pin Name
Formal Name
Definition
1, 7, 8, 14
8
GND
Ground
Electrical Common Ground and Heat removal. A good thermal path
will also reduce the die temperature.
2
1
TXD
Transmit Data
Data input here will appear on the BUS terminal. A logic [0] will assert
the bus, a logic [1] will make the bus go to the recessive state.
3, 4
2, 3
MODE0,
MODE1
Mode Control
These Pins control Sleep Mode, Transmit Level, and Speed. They
have weak pulldowns.
5
4
RXD
Receive Data
Open drain output of the data on BUS. A recessive bus = a logic [1], a
dominant bus = logic [0]. An external pullup is required.
6, 13
–
NC
No Connect
No internal connection to these Pins. Pin 13 can be connected to GND
to allow the use of the 14-terminal or 8-terminal device. (1)
9
–
CNTL
Control
Provides a battery-level logic signal.
10
5
VBATT
Battery
Power input. An external diode is needed for reverse battery
protection.
11
6
LOAD
Load
The external bus load resistor connects here to prevent bus pullup in
the event of loss of module ground.
12
7
BUS
Bus
This terminal connects to the bus through external components.
Notes
1. Module boards can be planned for the 14-terminal package and still use the 8-terminal package.
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
VBATT
- 0.3 to 40
V
VIN
- 0.3 to 7.0
V
RXD Pin Voltage
VRXD
- 0.3 to 7.0
V
CNTL Pin Voltage (33897/A/C/T only)
VCNTL
- 0.3 to 40
V
Electrical Ratings
Supply Voltage
Input Logic Voltage
ESD Voltage
(2)
VESD
V
Human Body Model
All Pins Except BUS
± 2000
33897/A/B/T
±1500
33897C/D
BUS Terminal (All Pkgs)
Machine Model
± 4000
33897/A/B
± 200
33897C/D/T
± 100
Thermal Ratings
Ambient Operating Temperature(3)
TA
- 40 to 125
°C
Junction Operating Temperature
TJ
- 40 to 150
°C
Storage Temperature
TSTG
- 55 to 150
°C
Junction-to-Ambient Thermal Resistance
RθJA
150
°C/W
TPPRT
Note 5.
°C
Peak Package Reflow Temperature During Reflow (4), (5)
Notes
2. ESD testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω),
Machine Model (CZAP = 200 pF, RZAP = 0 Ω).
3.
4.
5.
When using the 8-terminal device, consider the power dissipation at a high operating voltage and maximum network loading at ambient
temperatures exceeding 85°C.
Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
33897/A/B/C/D/T
6
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions of -40°C ≤ TA ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
33897/A/B/C/D
–
–
45
55
60
75
µA
33897T
–
4.0
mA
–
9.0
mA
GENERAL
Quiescent Current
Sleep
IQSLP
5.0 V ≤ VBATT ≤ 13 V
(6)
Awake with Transmitter Disabled
IQATDIS
5.0 V ≤ VBATT ≤ 26.5 V
–
Awake with Transmitter Enabled
IQATEN
5.0 V ≤ VBATT ≤ 26.5 V
–
Undervoltage Shutdown
VBATTUV
4.0
–
5.0
V
Undervoltage Hysteresis
VUVHYS
0.1
–
0.5
V
190
°C
20
°C
Thermal Shutdown
(7)
TSD
5.0 V ≤ VBATT ≤ 26.5 V
Thermal Shutdown Hysteresis
(7)
150
–
10
–
–
–
TSDHYS
5.0 V ≤ VBATT ≤ 26.5 V
LOGIC I /O, MODE0, MODE1, TXD, RXD
Logic Input Low Level (MODE0, MODE1, and TXD)
VIL
5.0 V ≤ VBATT ≤ 26.5 V
Logic Input High Level (MODE0, MODE1, and TXD)
VIH
5.0 V ≤ VBATT ≤ 26.5 V
Mode Pin Pulldown Current (MODE0 and MODE1)
V
2.0
–
–
10
–
50
µA
IPD
Pin Voltage = 0.8 V, 5.0 V ≤ VBATT ≤ 26.5 V
Receiver Output Low (RXD)
V
0.8
VOL
IIN = 2.0 mA, 5.0 V ≤ VBATT ≤ 26.5 V
V
–
–
0.45
CNTL (33897/A/C/T ONLY)
CNTL Output Low
VOLCNTL
IIN = 5.0 µA, 5.0 V ≤ VBATT ≤ 26.5 V
CNTL Output High
IOUT = 180 µA, 5.0 V ≤ VBATT ≤ 26.5 V
V
–
–
0.8
VBATT - 0.8
–
VBATT
VOHCNTL
V
Notes
6. After tCNTLFDLY
7. Thermal shutdown causes the BUS output driver to be disabled. Guaranteed by characterization.
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of -40°C ≤ TA ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
LOAD
LOAD Voltage Rise (8)
VLDRISE
V
Normal Speed and Voltage Mode, Transmit HighVoltage Mode, Transmit High-Speed Mode
IIN = 1.0 mA, 5.0 V ≤ VBATT ≤ 26.5 V
–
–
0.1
–
–
1.0
–
–
0.1
–
–
1.0
Sleep Mode
IIN = 7.0 mA
IIN = 7.0 mA (9)
33897/T
33897A/B/C/D
Loss of Battery
IIN = 7.0 mA
LOAD Leakage During Loss of Module Ground (10)
µA
ILDLEAK
0.0 V ≤ VBATT ≤ 18 V
33897/A/B/T
0.0
–
- 90
0.0 V ≤ VBATT ≤ 18 V
33897C/D
-10
–
10
BUS
µA
Passive Out BUS Leakage
Passive In
0.0 V ≤ VBATT ≤ 26.5 V, -1.5 V ≤ VBUS < 0 V
ILEAK
-5.0
–
5.0
-5.0
–
5.0
-10
–
10
0.0
–
-90
ILKAI
Active In
0.0 V ≤ VBATT ≤ 26.5 V, 0 V < VBUS ≤ 12.5 V
BUS Leakage During Loss of Module Ground (11)
0.0 V ≤ VBATT ≤ 18 V
33897/A/B/T
0.0 V ≤ VBATT ≤ 18 V
33897C/D
IBLKLOG
High-Voltage Wake-up Mode Output High Voltage
V
12 V ≤ VBATT ≤ 26.5 V, 200 Ω ≤ RL ≤ 3332 Ω
33897/T
VHVWUOHF
9.7
–
33897A/B/C/D
VHVWUOHO
9.9
–
5.0 V ≤ VBATT < 12 V, 200 Ω ≤ RL ≤ 3332 Ω
High-Speed Mode Output High Voltage
Lesser of VBAT - 1.5 or 9.7
12.5
12.5
VBATT
VOHHS
8.0 V ≤ VBATT ≤ 16 V, 75 Ω ≤ RL ≤ 135 Ω
V
4.2
–
5.1
Normal Mode Output High Voltage
V
6.0 V ≤ VBATT ≤ 26.5 V, 200 Ω ≤ RL ≤ 3332 Ω
VNOHF
4.4
–
5.1
5.0 V ≤ VBATT < 6.0 V, 200 Ω ≤ RL ≤ 3332 Ω
VNOHO
Lesser of VBATT - 1.6 or
4.4
–
Lesser of VBATT
or 5.1
- 0.2
–
0.2
-350
–
- 150
BUS Low Voltage
VOL
5.0 V ≤ VBATT ≤ 26.5 V, 200 Ω ≤ RL ≤ 3332 Ω
Short Circuit BUS Output Current
Dominant State, 5.0 V ≤ VBATT ≤ 26.5 V
V
IBSC
mA
Notes
8. GMW3089V2.4 specifies the maximum load voltage rise to be 0.1 V whenever module battery is intact, including when in Sleep mode.
The maximum load voltage rise of 1.0 V in Sleep mode is a GM-approved exception to GMW3089V2.4.
9. 33897A/B/C/D remove diode drop during Sleep mode.
10. LOAD terminal is at system ground voltage.
11. BUS terminal is at system ground voltage
33897/A/B/C/D/T
8
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of -40°C ≤ TA ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS (CONTINUED)
Input Threshold
V
Awake
5.0 V ≤ VBATT ≤ 26.5 V
VBIA
2.0
–
2.2
VBISF
6.6
–
7.9
VBISO
Lesser of 6.6 V or
VBATT - 4.3
–
Lesser of 7.9 V or
VBATT - 3.25
Sleep
12 V ≤ VBATT ≤ 26.5 V
Sleep
5.0 V ≤ VBATT < 12 V
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of -40°C ≤ TA ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
2.0
–
6.3
1.8
–
8.5
0.1
–
1.7
Unit
BUS
Normal Speed Rising Output Delay
µs
t DLYNORMRO
200 Ω ≤ RL ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs
Measured from TXD = VIL to VBUS as follows:
Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Max Time to VBUSMOD = 2.7 V, VBATT = 5.0 V (12)
Min Time to VBUSMOD = 1.0 V, VBATT = 5.0 V (12)
Normal Speed Falling Output Delay
µs
t DLYNORMFO
200 Ω ≤ RL ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs
Measured from TXD = VIH to VBUS as follows:
Max Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Min Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Max Time to VBUSMOD = 1.0 V, VBATT = 5.0 V (12)
Min Time to VBUSMOD = 2.7 V, VBATT = 5.0 V (12)
High-Speed Rising Output Delay
µs
t DLYHSRO
75 Ω ≤ RL ≤ 135 Ω, 0.0 µs ≤ Load Time Constants ≤ 1.5 µs,
8.0 V ≤ VBATT ≤ 16 V
Measured from TXD = VIL to VBUS as follows:
Max Time to VBUS = 3.7 V (13)
Min Time to VBUS = 1.0 V (13)
High-Speed Falling Output Delay
75 Ω ≤ RL ≤ 135 Ω, 0.0 µs ≤ Load Time Constants ≤ 1.5 µs,
8.0 V ≤ VBATT ≤ 16 V
µs
t DLYHSFO
0.04
–
3.0
Measured from TXD = VIH to VBUS as follows:
Max Time to VBUS = 1.0 V (13)
Min Time to VBUS = 3.7 V (13)
Notes
12. VBUSMOD is the voltage at the BUSMOD node in Figure 7, page 15.
13. VBUS is the voltage at the BUS terminal in Figure 8, page 15.
33897/A/B/C/D/T
10
Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions of -40°C ≤ TA ≤ 125°C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the terminal. All negative currents are out of the terminal.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS (CONTINUED)
High-Voltage Rising Output Delay
µs
t DLYHVRO
200 Ω ≤ RL ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs
Measured from TXD=VIL to VBUS as follows:
Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (14)
2.0
–
6.3
Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (14)
2.0
–
6.3
2.0
–
18
Max Time to VBUSMOD = 9.4 V, 12.0 V ≤ VBATT ≤ 26.5 V (14)
High-Voltage Falling Output Delay
µs
t DLYHVFO
200 Ω ≤ RL ≤ 3332 Ω, 1.0 µs ≤ Load Time Constants ≤ 4.0 µs,
12.0 V ≤ VBATT ≤ 26.5 V
Measured from TXD=VIH to VBUS as follows:
Max Time to VBUSMOD = 1.0 V (14)
1.8
–
14
Min Time to VBUSMOD = 3.7 V (14)
1.8
–
14
0.2
–
1.0
10
–
70
300
–
1000
RECEIVER RXD
Receive Delay Time (5.0 V ≤ VBATT ≤ 26.5 V)
µs
t RDLY
Awake
Receive Delay Time (BUS Rising to RXD Falling, 5.0 V ≤ VBATT ≤ 26.5 V)
µs
t RDLYSL
Sleep
CNTL
CNTL Falling Delay Time (5.0 V ≤ VBATT ≤ 26.5 V)
(33897/A/C/T only)
t CNTLFDLY
ms
Notes
14. VBUSMOD is the voltage at the BUSMOD node in Figure 7, page 15.
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
TIMING DIAGRAMS
tDLYNORMFO
tDLYNORMRO
V IH
V IL
TXD
V NOHF
Bus
V BIA
V BUSMOD *
V BIA
V BUSMOD *
V IH
RXD
V IL
tRDLY
tRDLY
* VBUSMOD is the voltage at the BUSMOD node in Figure 7.
Figure 5. TXD, Bus and RXD Waveforms in Normal Mode
TDLYHSRO
tDLYHSFO
VIH
TXD
VIL
VNOHF
VBUS *
Bus
VBIA
VBIA
VBUS *
VIH
RXD
VIL
tRDLY
tRDLY
* VBUS is the voltage at the BUS terminal in Figure 8.
Figure 6. TXD, Bus and RXD Waveforms in High Speed Mode
33897/A/B/C/D/T
12
Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The 33897 Series is intended for use as a physical layer
device in a Single Wire CAN communications bus.
Communications takes place from a single terminal over a
single wire using a common ground for a current return path.
Two data rates are available, with the high rate used for
factory or assembly line communications and the lower for
actual system communications where the radiated EMI of the
higher rate could be an issue.
Two Pins control the mode of operation (sleep, low-speed,
high-speed, and high-voltage wake-up).
FUNCTIONAL PIN DESCRIPTION
The 33897 Series is intended to be used with an MCU to
control its operation and to process and generate the data for
the bus.
GROUND PINS (33897/A/C/T)
The four ground PINS are not only for electrical
conduction, their number and locations at each of the four
corners serve also to remove heat from the IC. The biggest
benefit of this is obtained by putting a lot of copper on the
PCB in this area and, if ground is an internal layer, by adding
numerous plated-through connections to it with the largest
diameter holes the layout can use.
RXD Data
The data received on the bus is translated to logic levels
on this terminal. This terminal is a logic high when the bus is
in the recessive state (near zero volts) and is logic low when
the bus is in either the normal or high-voltage dominant state.
This is an open-drain type of output that requires an
external resistor to pull it up. When the device is in sleep
mode, the output will be off unless a high-voltage wake-up
level is detected on the bus. If the wake-up level is detected,
the output will be driven by the data on the bus. If the level of
the data returns to normal level, the output will return to off
after a short delay unless a non-sleep mode condition is set
by the MCU.
TXD DATA
The data driven onto the SWCAN bus is inverted from the
TXD terminal. A “1” driven on TXD will result in an undriven
(recessive) state (bus at near zero volts). When the TXD
terminal is low, the output goes to a driven state. The voltage
and waveshaping in the driven state is determined by the
levels on the MODE0 and MODE1 Pins (refer to Table 6).
Table 6. Mode Control Logic Levels
Logic Level
Operation
MODE0
MODE1
0
0
Sleep Mode
0
1
High Voltage Wake-Up Mode
1
0
High Speed Mode
1
1
Normal Mode
MODE CONTROL
The MODE Pins control the transmitter filtering and BUS
voltage and the IC sleep mode operation. Table 6 shows the
mode versus the logic levels on MODE0 and MODE1.
The MODE0 and MODE1 Pins have a weak pulldown in
the IC so that in case the Pins are not driven, the device will
enter the sleep mode. This is usually the situation as the
MCU comes out of reset, before the driving signals have
been configured as outputs.
LOAD Switch
This switch is on in all operating modes unless a loss of
ground is detected. If this happens, the switch is opened and
the resistor normally attached to its terminal will no longer
pass current to or from the bus.
CNTL Output (33897/A/C/T ONLY)
This logic level signal is used to control a VCC regulator.
When the output is low, the VCC regulator is expected to
shutdown. This is normally used to shut down the MCU and
all the devices powered by VCC when the IC is in sleep mode.
This is done to save power. When the part is taken out of the
sleep mode by the higher-than-normal bus voltage, this
terminal is asserted high and the VCC regulator brings its
output up to the regulated level. This starts the MCU, which
controls the mode of the IC. The MCU must change the mode
signals to non-sleep mode levels in order to keep this
terminal from going low. There is a delay to allow the MCU to
fully wake up and take control after the high-voltage signaling
is removed before the level on this output returns low. After a
delay time, even if the bus is at high voltage, the IC will return
to sleep mode if both MODE Pins are low.
VBATT Input
This power input is not reverse battery protected and
should use an external diode to protect it from damage owing
to reverse battery if this protection is desired. The voltage
drop of the diode must be taken into consideration when the
operating range of the system is being determined. This
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
FUNCTIONAL DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM COMPONENTS
diode is generally used to protect the entire module from
reverse battery and should be selected accordingly.
BUS I /O
This input / output may require electrostatic discharge
(ESD) and /or EMI external circuitry. A set of components is
shown in the simplified application diagrams on page 16 of
this datasheet. The value of the capacitor should be adjusted
downward in direct proportion to the added capacitance of
the ESD or EMI circuits. The series resistance of the inductor
should be kept below 3.5 Ω to prevent its voltage drop from
significantly degrading system noise margins.
FUNCTIONAL BLOCK DIAGRAM COMPONENTS
Timer OSC
TXD BUS DRVR
This circuit generates a 500 kHz signal to be used for
internal logic. It is the reference for some of the required
delays.
This circuit drives the BUS. It can drive it with the higher
voltage wake-up signals when enabled by the Mode Control
circuit. It can also provide waveshaping for reduced EMI or
not provide it for the higher data rate mode. The actual data
is received on TXD at CMOS logic levels, then translated by
this circuit to the necessary operating voltages.
Timers
This circuit contains the timing logic used to hold the CNTL
active for the required time after the conditions for sleep
mode have been met. It is also used to keep the TXD driver
active for a period of time after it has generated a passive
level on the bus.
Mode Control
This circuit contains the control logic for the various
operating modes and conditions required for the IC.
BUS RCVR
This circuit translates the levels on the BUS terminal to a
CMOS level indicating the presence of a logic [0] or a
logic [1]. It also determines the presence of a high-voltage
wake-up (HVWU) signal that is passed to Mode Control and
Timers circuits. An analog filter is used to “de-glitch” the highvoltage wake-up signal and prevent false exits from the sleep
mode.
Undervoltage Detect
This circuit monitors internal operating voltage to assure
proper operation of the part. If a low-voltage condition is
detected, it sends a signal to disable the BUS RCVR and
TXD BUS DRVR circuits. This prevents incorrect data from
being put on the bus or sent to the MCU.
Load Switch
The LOAD switch provides a path for an external resistor
connected to the BUS to be connected to ground. When a
loss of ground is detected, this switch is opened to prevent
the current that would normally be flowing to the ground from
the module from going back through the load resistor and
raising the bus level. The circuit is opened when the voltage
between GND and VBATT becomes too low as would be the
case if module ground were lost.
33897/A/B/C/D/T
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Analog Integrated Circuit Device Data
Freescale Semiconductor
BUS LOADING PARAMETERS
FUNCTIONAL BLOCK DIAGRAM COMPONENTS
BUS LOADING PARAMETERS
VBATT
100 pF
1.0 kΩ
33897
47 µH
BUSMOD
BUS
6.49 kΩ
CNOM = 100 pF + (n -1) 220 pF
R=
6.49 kΩ
(n -1)
LOAD
GND
Note: The letter “n” represents the number of nodes in the system.
Figure 7. Transmitter Delays in Normal and Transmit High-Voltage Wake-Up Modes
33897
BUS
6.49 kΩ
130 Ω
CNOM = (n) 220 pF
R=
6.49 kΩ
(n -1)
LOAD
GND
Note: The letter “n” represents the number of nodes in the system.
Figure 8. Transmitter Delays in Transmit High-Speed Mode
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
15
TYPICAL APPLICATIONS
TYPICAL APPLICATIONS
level on the bus. This wake-up voltage will activate the control
line, which enables the regulator and turns the module back
on. This 33897/A/C/T feature allows the module to be more
energy efficient since the current consumption is significantly
lowered when it goes into sleep mode.
The 33897/A/C/T can be used in applications where the
module includes a regulator that has the capability of going
into Sleep mode by having an Enable terminal. See Figure 9.
When the module’s regulator is in sleep mode, the module is
turned off. The module waits for a defined wake-up voltage
VCC
Voltage
Regulator
Power
Battery
Source 100 nF
EN
100 pF
VBATT
1.0 kΩ
CNTL
VCC
10 kΩ
4.7 µF
2.7 kΩ
47 µH
BUS
TXD
SWC BUS
47 pF
RXD
MODE0 LOAD
MCU
6.49 kΩ
MODE1
4
GND
33897/A/C/T
Figure 9. 33897/A/C/T Typical Application Schematic
is no need for the module to have control over its regulator via
The 33897B/D do not have a control terminal to enable the
the transceiver.
module’s regulator. See Figure 10. The 33897B/D can be
used in applications where board space is limited and there
Battery
100 nF
4.7 µF
100 pF
VCC
VBATT
1.0 kΩ
VCC
10 kΩ
2.7 kΩ
47 µH
TXD
BUS
SWC BUS
47 pF
RXD
MCU
MODE0 LOAD
6.49 kΩ
MODE1
GND
33897B/D
Figure 10. 33897B/D Typical Application Schematic
33897/A/B/C/D/T
16
Analog Integrated Circuit Device Data
Freescale Semiconductor
PACKAGING
PACKAGE DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
Important: For the most current Package revision, visit www.freescale.com and perform a Keyword Search on the “98A”
drawing number below.
D SUFFIX
EF (Pb-FREE) SUFFIX
14-TERMINAL SOICN
PLASTIC PACKAGE
98ASB42565B
ISSUE H
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
17
PACKAGING
PACKAGE DIMENSIONS (CONTINUED)
PACKAGE DIMENSIONS (CONTINUED)
EF (Pb-FREE) SUFFIX
8-TERMINAL SOICN
PLASTIC PACKAGE
98ASB42564B
ISSUE U
33897/A/B/C/D/T
18
Analog Integrated Circuit Device Data
Freescale Semiconductor
REVISION HISTORY
REVISION HISTORY
REVISION
DATE
DESCRIPTION OF CHANGES
•
•
•
•
•
•
•
Converted to Freescale format
Added A & B Versions
Updated Device Variation Table, and Note “* Recommended device for all new designs”
Added EF (Pb-Free) Devices, and higher soldering temperature
Implemented Revision History page
Updated Simplified Application Diagrams
Updated Typical Application Schematic
9.0
5/2005
10.0
8/2005
11.0
12/2005
• Added 33897C and D versions and Timing Diagrams
12.0
1/2006
13.0
6/2006
14.0
8/2006
15.0
10/2006
• Updated Table 4, Static Electrical Characteristics - LOAD and BUS parameters
• Updated Ordering Information.
• Removed “Unless otherwise noted” from Static Electrical Characteristics & Dynamic
Electrical Characteristics table introductions
• Added Part Numbers MC33897TD and MC33897TEF to Ordering Information on Page 1.
• Added 33897T to Table 1, Device Variations on Page 3, Referencing Electrical Changes
per Errata MC33897TER, Revision 3 and specifying ESD variations
• Removed Part Numbers MC33897TD/R2, MC33897TEF/R2, MC33897CLEF/R2, PC33897CLEF/R2,
MC33897DLEF/R2, and PC33897DLEF/R2
• Added Part Numbers MCZ33897EF/R2, MCZ33897TEF/R2, MCZ33897AEF/R2, MCZ33897CEF/R2,
MCZ33897BEF/R2, and MCZ33897DEF/R2 to the Ordering Information block on Page 1.
• Updated Device Variations on page 3 for “T” suffix products
• Split out Human Body Model on page 6 to differentiate between T and non-T versions
• Added Undervoltage Hysteresis on page 7
• Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter
from Maximum Ratings on page 6. Added note with instructions to obtain this information
from www.freescale.com.
33897/A/B/C/D/T
Analog Integrated Circuit Device Data
Freescale Semiconductor
19
REVISION HISTORY
33897/A/B/C/D/T
20
Analog Integrated Circuit Device Data
Freescale Semiconductor
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MC33897
Rev. 15.0
10/2006
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