Rectron MD1S Single-phase glass passivated mini silicon surface mount bridge rectifier (voltage range 50 to 1000 volts current 0.5 ampere) Datasheet

MD1S
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MD7S
SINGLE-PHASE GLASS PASSIVATED
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere
FEATURES
*
*
*
*
*
*
*
Surge overload rating - 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 0.5 gram
MD-S
MECHANICAL DATA
1
2
3
4
M D
0.106(2.7)
0.091(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
0.006(0.15)
0.193(4.9)
0.177(4.5)
For capacitive load, derate current by 20%.
0.157(4.0)
0.014(0.35)
o
Single phase, half wave, 60 Hz, resistive or inductive load.
0.157(4.0)
0.145(3.6)
2.756(7.0)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
0.260(6.6)
.004(0.10) MAX.
0.028(0.9)
0.020(0.5)
0.152(3.6)
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
Dimensions in millimeters
MAXIMUM RATINGS (At T A = 25oC unless otherwise noted)
SYMBOL
MD1S
MD2S
MD3S
MD4S
MD5S
MD6S
MD7S
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Bridge Input Voltage
V RMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
RATINGS
Maximum Average Forward Output Rectified
Current at TA = 30 oC
- on glass-epoxy P.C.B. ( NOTE 1 )
- on aluminum substrate ( NOTE 2 )
Amp
0.5
IO
0.8
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
I FSM
30
Amps
T J, T STG
-55 to + 150
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage Drop per Bridge
VF
Element at 0.5A DC
o
Maximum Reverse Current at rated
@T A = 25 C
DC Blocking Voltage per element
@T A = 125 oC
IR
MD1S
MD2S
MD3S
MD4S
MD5S
MD6S
UNITS
1.05
Volts
10
uAmps
0.5
mAmps
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.
3. Suffix “-S” Surface Mount for Mini Dip Bridge.
MD7S
2001-4
RATING AND CHARACTERISTIC CURVES ( MD1S THRU MD7S )
POWER DISSIPATION
2.4
2
sine wave
pulse test
per one diode
0
Tj=150 C
2
1
0.5
POWER DISSIPATION PF(W)
INSTANTANEOUS FORWARD CURRENT, (A)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
0
TL=150 C
0
TL=25 C
(TYP)
(TYP)
0.2
0.1
0.05
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
0.4
0.6
0.8
1
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
SURGE FORWARD CURRENT CAPABILITY
1.4
35
AVERAGE FORWARD CURRENT, (A)
sine wave
IFSM
PEAK FORWARD SURGE CURRENT, (A)
0.2
30
0
25
8.3ms 8.3ms
1 cycle
20
non-repetitive
0
Tj=25 C
15
10
5
sine wave
R-load
free in air
1.2
1.0
0.8
on aluminum
substrate
0.6
0.4
on glass
-epoxy substrate
0.2
0
0
1
2
5
10
20
NUMBER OF CYCLE
50
100
0
40
80
120
160
o
AMBIENT TEMPERATURE, ( C )
RECTRON
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