IXYS MDD172-16N1 High power diode module Datasheet

MDD 172
IFRMS = 2x 300 A
IFAVM = 2x 190 A
VRRM = 800-1800 V
High Power
Diode Modules
VRSM
3
VRRM
Type
800
1200
1400
1600
1800
MDD 172-08N1
MDD 172-12N1
MDD 172-14N1
MDD 172-16N1
MDD 172-18N1
1
2
2
3
1
VV
900
1300
1500
1700
1900
Symbol
IFRMS
IFAVM
Test Conditions
TVJ = TVJM
TC = 100°C; 180° sine
IFSM
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
6600
7290
5600
6200
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
218 000
221 000
157 000
160 000
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
òi2dt
Maximum Ratings
300
A
190
A
Md
50/60 Hz, RMS
IISOL £ 1 mA
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Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
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TVJ
TVJM
Tstg
VISOL
A
A
A
A
Features
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
t = 1 min
t=1s
Weight
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
Symbol
IR
Test Conditions
TVJ = TVJM; VR = VRRM
VF
IF = 300 A; TVJ = 25°C
VT0
rT
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
120
g
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
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Dimensions in mm (1 mm = 0.0394")
Characteristic Values
20 mA
1.15
V
For power-loss calculations only
TVJ = TVJM
0.8
0.8
V
mW
QS
IRM
TVJ = 125°C; IF = 300 A, -di/dt = 50 A/ms
550
235
mC
A
RthJC
per diode; DC current
per module
per diode; DC current
per module
RthJK
dS
dA
a
other values
see Fig. 6/7
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
0.21
0.105
0.31
0.155
K/W
K/W
K/W
K/W
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-3
MDD 172
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 òi2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
2-3
MDD 172
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
0.210
0.223
0.233
0.260
0.295
Constants for ZthJC calculation:
i
1
2
3
Rthi (K/W)
ti (s)
0.0087
0.0163
0.185
0.001
0.065
0.4
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJK (K/W)
0.31
0.323
0.333
0.360
0.395
Constants for ZthJK calculation:
i
1
2
3
4
© 2000 IXYS All rights reserved
Rthi (K/W)
ti (s)
0.0087
0.0163
0.185
0.1
0.001
0.065
0.4
1.29
3-3
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