Microsemi MG1041 Gunn diodes anode heat sink Datasheet

GUNN Diodes
Anode Heat Sink
®
TM
MG1041 – MG1059
Features
●
High Reliability
●
Low-Phase Noise
●
9.5–35.5 GHz Operation
●
Pulsed and CW Designs to 20 mW
Applications
●
Motion Detectors
●
Transmitters and Receivers
●
Beacons
●
Automotive Collision Avoidance Radars
●
Radars
●
Radiometers
●
Instrumentation
Copyright  2008
Rev: 2009-01-19
Description
Microsemi’s GaAs Gunn diodes, epi-up (anode
heatsink), are fabricated from epitaxial layers grown
at MSC by the Vapor Phase Epitaxy technique. The
layers are processed using proprietary techniques
resulting in ultra- low phase and 1/f noise. The diodes
are available in a variety of microwave ceramic
packages for operation from 9.5–35.5 GHz.
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GUNN Diodes
Anode Heat Sink
®
TM
MG1041 – MG1059
(Discrete Frequency: Anode Heatsink)
CW Epi-Up Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating Voltage
(V)
Max.
Operating Current
(mA)
Package
Outline3
MG1052-11
9.5–11.5
10
8
140
M11
MG1056-11
9.5–11.5
20
8
200
M11
MG1054-11
23.0–25.0
5
5
200
M11
MG1058-11
23.0–25.0
10
5
300
M11
MG1059-11
33.5–35.5
5
5
300
M11
Pulsed Epi-Up Gunn Diodes (Specifications @ 25°C)
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating Voltage
(V)
Max.
Operating Current
(mA)
Package
Outline3
MG1041-11
9.5–11.5
10
9
110
M11
MG1042-11
9.5–11.5
20
9
140
M11
MG1043-11
9.5–11.5
30
10
180
M11
MG1044-11
23.0–25.0
5
8
120
M11
MG1045-11
23.0–25.0
10
8
150
M11
MG1046-11
23.0–25.0
20
8
200
M11
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 µS, duty factor = 1% typ.
3
Polarity: cathode is the cap and anode is the heatsink.
1
2
Typical Characteristics
1.0
25
-50°C
Power Output (mW)
IBias
Ratio
IThreshold
0.8
0.6
0.4
0.2
0
0
1
2
VBias
VThreshold
20
15
90°C
10
5
0
3
0
1
2
3
5
4
6
7
Bias Voltage (V)
Ratio
Power Output vs. Bias Voltage
IBias Ratio vs. VBias Ratio
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These products are supplied with a RoHS
complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright  2008
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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