MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications · High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC ― JEITA ― TOSHIBA Weight: 430 g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 300 1 ms ICP 600 DC IF 300 1 ms IFM 600 PC 2700 W Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature A A Tj 150 °C Storage temperature range Tstg -40 to 125 °C Isolation voltage VIsol 2500 (AC 1 minute) V Terminal ¾ 3 Mounting ¾ 3 Screw torque 2-109C4A 1 N▪m 2003-03-11 MG300Q2YS65H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ¾ ¾ 2.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 300 mA 4.0 ¾ 7.0 V Collector-emitter saturation voltage VCE (sat) IC = 300 A, VGE = 15 V Tc = 25°C ¾ 3.0 4.0 Tc = 125°C ¾ 3.6 ¾ ¾ 25600 ¾ ¾ 0.08 ¾ ¾ 0.09 ¾ ¾ 0.17 ¾ ¾ 0.55 ¾ tf ¾ 0.05 0.15 toff ¾ 0.60 ¾ Input capacitance Turn-on delay time td (on) Rise time Switching time VCE = 10 V, VGE = 0, f = 1 MHz Cies tr Turn-on time Inductive load VCC = 600 V, IC = 300 A VGE = ±15 V, RG = 2.7 W ton Turn-off delay time td (off) Fall time Turn-off time V pF ms Forward voltage VF IF = 300 A, VGE = 0 ¾ 2.4 3.0 V Reverse recovery time trr IF = 300 A, VGE = -10 V, di/dt = 1000 A/ms ¾ 0.15 ¾ ms Transistor stage ¾ ¾ 0.045 Diode stage ¾ ¾ 0.1 Inductive load VCC = 600 V, IC = 300 A VGE = ±15 V, RG = 2.7 W Tc = 125°C ¾ 30 ¾ ¾ 26 ¾ Thermal resistance Switching loss Rth (j-c) Turn-on Eon Turn-off Eoff °C/W mJ Note: Switching time measurement circuit and input/output waveforms RG VGE IF 90% 10% 0 -VGE IC VCC L trr IC RG 90% 90% VCE 0 10% tf td (off) toff 2 10% td (on) tr ton 2003-03-11 MG300Q2YS65H IC – VCE IC – VCE 600 600 15 V 20 V 12 V 18 V 450 (A) 18 V (A) 20 V 12 V 10 V 10 V 450 Collector current Collector current IC IC 15 V 300 PC = 2700 W 150 0 0 VGE = 8 V Common emitter Tc = 25°C 2 4 6 8 Collector-emitter voltage VCE 300 VGE = 8 V 150 0 0 10 (V) Common emitter Tc = 125°C 2 4 Collector-emitter voltage VCE – VGE 16 VCE VCE Collector-emitter voltage 12 8 IC = 600 A (V) 300 A 12 8 IC = 600 A 300 A 4 150 A 150 A 0 0 4 8 12 Gate-emitter voltage VGE 16 0 0 20 4 8 (V) Common cathode VGE = 0 (A) Forward current IF IC (A) 20 IF – VF 500 Collector current 16 (V) 600 Common emitter VCE = 5 V 450 Tc = 125°C 300 25°C 150 4 8 Gate-emitter voltage VGE 400 300 Tc = 125°C 200 25°C 100 -40°C 0 0 12 Gate-emitter voltage VGE IC – VGE 600 10 Common emitter Tc = 125°C (V) Common emitter Tc = 25°C (V) VCE Collector-emitter voltage 8 VCE – VGE 16 4 6 12 0 0 16 (V) 1 2 Forward voltage 3 3 VF 4 (V) 2003-03-11 MG300Q2YS65H Switching time – IC Switching time – IC 1 Common emitter VCC = 600 V VGE = ±15 V Rg = 2.7 W toff Switching time Switching time td (off) (ms) ton (ms) 1 0.1 td (on) 0.1 tf tr 0.01 10 : Tc = 25°C : Tc = 125°C 100 0.01 10 1000 Collector current IC (A) 100 Collector current Switching time – RG Common emitter VCC = 600 V VGE = ±15 V RG = 2.7 W : Tc = 25°C : Tc = 125°C 1000 IC (A) Switching time – RG 1 10 0.1 0.01 1 Switching time Switching time (ms) (ms) ton tr td (on) Common emitter VCC = 600 V IC = 300 A VGE = ±15 V : Tc = 25°C : Tc = 125°C 10 td (off) 0.01 1 (9) Common emitter VCC = 600 V IC = 300 A VGE = ±15 V : Tc = 125°C 10 100 Gate resistance RG Switching loss – IC 100 tf 0.1 : Tc = 25°C 100 Gate resistance RG toff 1 (9) Switching loss – RG 100 : Tc = 25°C : Tc = 125°C Eon (mJ) Eoff Switching loss Switching loss (mJ) Eoff Eon 10 Edsw 1 10 Common emitter VCC = 600 V VGE = ±15 V RG = 2.7 W 100 Collector current Edsw 1 1 1000 IC 10 (A) Common emitter VCC = 600 V IC = 300 A VGE = ±15 V : Tc = 25°C : Tc = 125°C 10 Gate resistance RG 4 100 (9) 2003-03-11 MG300Q2YS65H VCE, VGE – QG C – VCE 1600 16 100000 Common emitter Cies VCE = 0 V 800 8 600 V 400 V 200 V 400 4 Capacitance C 12 (pF) (V) 1200 Gate-emitter voltage VGE Collector-emitter voltage VCE (V) RL = 2 W Tc = 25°C Coes 10000 Cres 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0 0 600 1800 1200 Charge QG 2400 0 3000 100 0.01 (nC) 0.1 Collector-emitter voltage Short circuit SOA VCE 100 (V) 1000 (A) 5 3 2 VCC < = 900 V 1 100 IC 4 Collector current (x rating current) 10 Reverse bias SOA 6 Collector current 1 10 1 Tj < = 125°C VGE = ±15 V RG = 2.7 W tw = 5 ms 0 0 200 Tj < = 125°C 400 600 800 Collector-emitter voltage 1000 VCE 1200 0.1 0 1400 (V) 500 Collector-emitter voltage 1000 VCE 1500 (V) Rth (t) – tw Transient thermal resistance Rth (t) (°C/W) 1 Diode stage 0.1 Transistor stage 0.01 Tc = 25°C 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 5 2003-03-11 MG300Q2YS65H RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-03-11