MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT 15 Amps, 350 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. • Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition System Applications • High Pulsed Current Capability up to 50 A • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • Optional Gate Resistor (RG) 15 AMPERES 350 VOLTS (Clamped) VCE(on) @ 10 A = 1.8 V Max N−Channel C RG G RGE 4 E 4 1 MAXIMUM RATINGS (−55°C ≤ TJ ≤ 175°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCES 380 VDC Collector−Gate Voltage VCER 380 VDC Gate−Emitter Voltage VGE 22 VDC IC 15 50 ADC AAC Rating Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V PD 150 1.0 Watts W/°C TJ, Tstg −55 to 175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L = 2.0 mH, Starting TJ = 150°C EAS © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 5 3 1 D2PAK CASE 418B STYLE 4 TO−220AB CASE 221A STYLE 9 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 3 4 Collector 4 Collector kV 8.0 UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°C ≤ TJ ≤ 175°C) Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, L = 3.0 mH, Pk IL = 25.8 A, Starting TJ = 25°C 2 Value Unit G15N35CL YWW 1 Gate 3 Emitter 2 Collector mJ 1 Gate 3 Emitter 2 Collector G15N35CL = Device Code Y = Year WW = Work Week ORDERING INFORMATION 300 200 EAS(R) G15N35CL YWW mJ 1000 Device Package Shipping MGP15N35CL TO−220 50 Units/Rail MGB15N35CLT4 D2PAK 800 Tape & Reel Preferred devices are recommended choices for future use and best overall value. 1 Publication Order Number: MGP15N35CL/D MGP15N35CL, MGB15N35CL THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value Unit °C/W RθJC 1.0 TO−220 RθJA 62.5 D2PAK (Note 1) RθJA 50 TL 275 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds °C ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 150°C 320 350 380 VDC IC = 10 mA TJ = −40°C to 150°C 330 360 380 TJ = 25°C − 1.5 20 TJ = 150°C − 10 40* TJ = −40°C − 0.7 1.5 TJ = 25°C − 0.35 1.0 TJ = 150°C − 8.0 15* TJ = −40°C − 0.05 0.5 TJ = 25°C 25 33 50 TJ = 150°C 25 36 50 TJ = −40°C 25 30 50 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter Leakage Current Reverse Collector−Emitter Clamp Voltage Gate−Emitter Clamp Voltage ICES VCE = 300 V, VGE = 0 V IECS VCE = −24 V BVCES(R) IC = −75 mA μADC mA VDC BVGES IG = 5.0 mA TJ = −40°C to 150°C 17 20 22 VDC IGES VGE = 10 V TJ = −40°C to 150°C 384 600 1000 μADC Gate Resistor (Optional) RG − TJ = −40°C to 150°C − 70 − Ω Gate Emitter Resistor RGE − TJ = −40°C to 150°C 10 16 26 kΩ TJ = 25°C 1.4 1.7 2.0 VDC TJ = 150°C 0.75 1.1 1.4 TJ = −40°C 1.6 1.9 2.1* − − 4.4 − Gate−Emitter Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient − − (Negative) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 2 mV/°C MGP15N35CL, MGB15N35CL ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 1.0 1.3 1.6 VDC TJ = 150°C 0.9 1.2 1.5 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.3 1.6 1.9 TJ = 150°C 1.2 1.5 1.8 TJ = −40°C 1.3 1.6 1.9* TJ = 25°C 1.6 1.95 2.25 TJ = 150°C 1.7 2.0 2.3* TJ = −40°C 1.6 1.9 2.2 ON CHARACTERISTICS (continued) (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.0 A, VGE = 4.0 V IC = 10 A, VGE = 4.0 V IC = 15 A, VGE = 4.0 V Collector−to−Emitter On−Voltage Forward Transconductance TJ = 25°C 1.9 2.2 2.5 IC = 20 A, VGE = 4.0 V TJ = 150°C 2.1 2.4 2.7* TJ = −40°C 1.85 2.15 2.45 TJ = 25°C 2.1 2.5 2.9 IC = 25 A, VGE = 4.0 V TJ = 150°C 2.5 2.9 3.3* TJ = −40°C 2.0 2.4 2.8 VCE(on) IC = 10 A, VGE = 4.5 V TJ = 150°C − 1.5 1.8 VDC gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to 150°C 8.0 15 25 Mhos − 1000 1300 pF VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = −40°C to 150°C − 100 130 − 5.0 8.0 TJ = 25°C − 4.0 10 TJ = 150°C − 4.5 10 TJ = 25°C − 7.0 10 TJ = 150°C − 10 15* TJ = 25°C − 4.0 10 TJ = 150°C − 4.5 10 TJ = 25°C − 13 20 TJ = 150°C − 16 20 TJ = 25°C − 1.0 1.5 TJ = 150°C − 1.0 1.5 TJ = 25°C − 4.5 6.0 TJ = 150°C − 5.0 6.0 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS SWITCHING CHARACTERISTICS (Note 3) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, L = 300 μH tf VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, L = 300 μH td(off) VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, Fall Time (Resistive) tf VCC = 300 V, IC = 6.5 A RG = 1.0 kΩ, RL = 46 Ω, Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω Rise Time tr VCC = 10 V, IC = 6.5 A RG = 1.0 kΩ, RL = 1.5 Ω 3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range. http://onsemi.com 3 μSec μSec μSec MGP15N35CL, MGB15N35CL TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted) 60 50 IC, COLLECTOR CURRENT (AMPS) VGE = 10.0 V VGE = 4.5 V VGE = 5.0 V 40 VGE = 4.0 V 30 TJ = 25°C VGE = 3.5 V 20 VGE = 3.0 V 10 0 VGE = 2.5 V 0 1 3 2 5 4 7 6 IC, COLLECTOR CURRENT (AMPS) VGE = 5.0 V 40 VGE = 4.0 V 30 TJ = 150°C VGE = 3.0 V 10 VGE = 2.5 V 0 TJ = 150°C 10 TJ = 25°C TJ = −40°C 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGE, GATE TO EMITTER VOLTAGE (VOLTS) 2 3 4 5 6 7 8 4.0 3.5 VGE = 5.0 V 3.0 IC = 25 A IC = 20 A 2.5 2.0 1.5 1.0 IC = 15 A 0.5 0.0 −50 IC = 5 A IC = 10 A −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Transfer Characteristics Figure 4. Collector−to−Emitter Saturation Voltage vs. Junction Temperature 10000 2.5 THRESHOLD VOLTAGE (VOLTS) C, CAPACITANCE (pF) 1 Figure 2. Output Characteristics 15 Ciss 1000 Coss 100 10 1 VGE = 3.5 V 20 Figure 1. Output Characteristics VCE = 10 V 0 VGE = 4.5 V VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 20 0 50 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 30 25 VGE = 10.0 V 0 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 60 Crss 0 20 40 60 80 100 120 Mean + 4 σ 2.0 1.5 Mean − 4 σ 1.0 0.5 0.0 −50 140 160 180 200 IC = 1 mA Mean −25 0 25 50 75 100 125 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 5. Capacitance Variation Figure 6. Threshold Voltage vs. Temperature http://onsemi.com 4 150 MGP15N35CL, MGB15N35CL 30 VCC = 50 V VGE = 5.0 V RG = 1000 Ω 25 IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) 30 20 T = 25°C 15 10 T = 150°C 5 0 0 2 4 6 8 L = 3.0 mH 10 L = 6.0 mH 5 0 25 50 75 100 Figure 8. Minimum Open Secondary Latch Current vs. Temperature VCC = 50 V VGE = 5.0 V RG = 1000 Ω T = 25°C 25 20 T = 150°C 10 5 0 2 4 8 6 8 20 L = 3.0 mH 15 L = 6.0 mH 10 5 0 25 50 75 100 125 150 INDUCTOR (mH) TEMPERATURE (°C) Figure 9. Typical Open Secondary Latch Current vs. Inductor Figure 10. Typical Open Secondary Latch Current vs. Temperature 175 14 VCC = 300 V VGE = 5.0 V RG = 1000 Ω IC = 10 A L = 300 μH tf 12 tf td(off) 6 4 2 0 −50 25 175 VCC = 50 V VGE = 5.0 V RG = 1000 Ω L = 2.0 mH 0 −50 −25 10 SWITCHING TIME (μS) 10 150 Figure 7. Minimum Open Secondary Latch Current vs. Inductor 30 15 125 TEMPERATURE (°C) IL, LATCH CURRENT (AMPS) IL, LATCH CURRENT (AMPS) 15 INDUCTOR (mH) 12 SWITCHING TIME (μS) L = 2.0 mH 20 0 −50 −25 10 30 0 VCC = 50 V VGE = 5.0 V RG = 1000 Ω 25 10 VCC = 300 V VGE = 5.0 V RG = 1000 Ω TJ = 150°C L = 300 μH 8 6 td(off) 4 2 −25 0 25 50 75 100 125 0 150 0 2 4 6 8 10 12 14 TC, CASE TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS) Figure 11. Switching Speed vs. Case Temperature Figure 12. Switching Speed vs. Collector Current http://onsemi.com 5 16 MGP15N35CL, MGB15N35CL 14 10 8 12 SWITCHING TIME (μS) 12 SWITCHING TIME (μS) 14 VCC = 300 V VGE = 5.0 V TJ = 25°C IC = 10 A L = 300 μH tf 6 td(off) 4 tf 10 VCC = 300 V VGE = 5.0 V TJ = 150°C IC = 10 A L = 300 μH 8 6 td(off) 4 2 2 0 250 750 500 0 250 1000 750 500 1000 RG, EXTERNAL GATE RESISTANCE (Ω) RG, EXTERNAL GATE RESISTANCE (Ω) Figure 13. Switching Speed vs. External Gate Resistance Figure 14. Switching Speed vs. External Gate Resistance R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 10 Duty Cycle = 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T1 P(pk) t1 Single Pulse t2 DUTY CYCLE, D = t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 TJ(pk) − TA = P(pk) RθJA(t) RθJC ≅ R(t) for t ≤ 0.2 s 1 t,TIME (S) Figure 15. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on fixture in Figure 16) http://onsemi.com 6 10 100 1000 MGP15N35CL, MGB15N35CL 1.5″ 4″ 4″ 0.125″ 4″ Figure 16. Test Fixture for Transient Thermal Curve (48 square inches of 1/8, thick aluminum) 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 DC 100 μs 10 1 ms 10 ms 1 100 ms 0.1 0.01 1 10 100 DC 10 100 μs 1 1 ms 10 ms 100 ms 0.1 0.01 1 1000 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 17. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 18. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 7 MGP15N35CL, MGB15N35CL 100 t1 = 1 ms, D = 0.05 DC t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 P(pk) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 0.01 1 10 100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) 100 t1 = 2 ms, D = 0.10 10 t1 = 3 ms, D = 0.30 1 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 0.01 1 1000 t1 = 1 ms, D = 0.05 DC 10 100 1000 COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 19. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C) Figure 20. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C) http://onsemi.com 8 MGP15N35CL, MGB15N35CL PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA SEATING PLANE −T− B F T C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 9: PIN 1. 2. 3. 4. http://onsemi.com 9 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MGP15N35CL, MGB15N35CL PACKAGE DIMENSIONS D2PAK CASE 418B−03 ISSUE D C E −B− V 4 1 2 3 A S −T− SEATING PLANE K J G D 3 PL 0.13 (0.005) H M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 GATE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MGP15N35CL/D