Mitsubishi MGF4916 Super low noise ingaas hemt Datasheet

MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron
OUTLINE DRAWING
Unit:millimeters
Mobility Transistor) is designed for use in L to Ku band amplifiers.
The
hermetically
sealed
metal-ceramic
package
4.0±0.2
assures
minimumu parasitic losses, and has a configuration suitable for
1.85±0.2
microstrip circuits.
1
The MGF491*G series is mounted in the super 12 tape.
0.5±0.15
FEATURES
2
• Low noise figure
2
@f=12GHz
MGF4916G:NFmin.=0.80dB(MAX.)
0.5±0.15
MGF4919G:NFmin.=0.50dB(MAX.)
• High associated gain
@f=12GHz
3
Gs=12.0dB(MIN.)
ø1.8±0.2
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
1 GATE
2 SOURCE
RECOMMENDED BIAS CONDITIONS
3 DRAIN
• VDS=2V,ID=10mA
GD-16
• Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol
VGDO
VGSO
ID
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Ratings
-4
-4
60
50
125
-65 to +125
Unit
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
V(BR)GDO
IGSS
IDSS
VGs(off)
gm
GS
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
NFmin.
Transconductance
Associated gain
Minimum noise figure
Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz
MGF4916G
MGF4919G
Min
-3
–
15
-0.1
–
12.0
–
–
Limits
Typ
–
–
–
–
75
13.5
–
–
Max
–
50
60
-1.5
–
–
0.80
0.50
Unit
V
µA
mA
V
mS
dB
dB
dB
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
TYPICAL CHARACTERISTICS (Ta=25˚C)
ID vs. VGS
ID vs. VDS
50
60
Ta=25˚C
VDS=2V
Ta=25˚C
VGS=-0.1V/STEP
50
40
VGS=0V
40
30
30
20
20
10
10
0
-1.0
0
-0.5
0
GATE TO SOURCE VOLTAGE VGS(V)
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE VDS(V)
NF & Gs vs. ID
(MGF4919G)
16
Ta=25˚C
VDS=2V
f=12GHz
14
GS
12
10
0.9
0.8
8
0.7
0.6
NF
0.5
0.4
0.3
0
5
10
15
20
25
DRAIN CURRENT ID (mA)
Nov. ´97
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
S PARAMETERS
Freq.
(GHz)
(Ta=25˚C,VDS=2V,ID=10mA)
S11
S21
S12
S22
Angle
-22.3
-40.6
-53.2
-70.9
-88.8
-105.7
-120.6
-132.1
Mag.
5.775
5.585
5.401
5.161
4.899
4.626
4.316
4.100
Angle
158.1
140.6
128.9
111.8
96.8
80.8
67.9
56.4
Mag.
0.020
0.035
0.051
0.064
0.075
0.083
0.087
0.090
Angle
71.9
61.8
53.3
42.4
29.3
19.0
9.1
4.1
Mag.
0.533
0.514
0.489
0.457
0.424
0.391
0.369
0.357
Angle
-19.2
-33.4
-42.9
-58.2
-71.6
-87.5
-100.6
-110.8
K
MSG/MAG
(dB)
1
2
3
4
5
6
7
8
Mag.
0.990
0.967
0.925
0.874
0.831
0.783
0.743
0.706
0.10
0.19
0.27
0.35
0.43
0.50
0.57
0.64
28.8
26.5
24.3
21.6
19.8
18.1
16.8
15.9
9
10
11
0.682
0.670
0.639
-144.7
-159.1
-171.8
3.887
3.765
3.617
43.2
30.1
17.5
0.093
0.094
0.095
-6.4
-14.3
-24.4
0.357
0.351
0.339
-122.3
-133.0
-143.5
0.69
0.72
0.80
15.1
14.7
14.0
12
13
0.617
0.591
175.3
163.1
3.526
3.421
4.5
-8.1
0.096
0.094
-33.5
-42.5
0.329
0.328
-154.0
-163.9
0.86
0.91
13.5
13.0
14
15
16
17
18
0.571
0.565
0.560
0.533
0.484
152.9
140.1
125.8
109.8
91.2
3.349
3.333
3.349
3.356
3.337
-17.4
-29.6
-44.4
-59.9
-77.0
0.094
0.096
0.098
0.101
0.104
-50.9
-61.1
-74.1
-88.8
-105.1
0.328
0.343
0.351
0.337
0.310
-171.3
179.5
170.5
161.8
151.6
0.95
0.96
0.98
1.01
1.11
12.7
12.7
12.7
12.5
12.1
NOISE PARAMETERS
Freq.
(GHz)
4
8
12
14
18
(Ta=25˚C,VDS=2V,ID=10mA)
opt
Magn.
0.76
0.59
0.48
0.41
0.34
Angle(deg.)
49
95
139
166
-142
Rn
(Ω)
12.5
4.7
2.3
1.8
1.5
NFmin.(dB)
MGF4916G
MGF4919G
0.31
0.24
0.47
0.35
0.60
0.45
069
0.50
0.88
0.61
Gs
(dB)
18.3
15.9
13.5
12.3
9.9
Nov. ´97
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