MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 FEATURES (1) 2MIN 0.6 +/-0.15 12.9 +/-0.2 (2) (2) 2MIN R-1.6 11.3 Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4~3.6GHz High power gain GLP = 13.5 dB (TYP.) @ f=3.4~3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4~3.6GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=25dBm S.C.L. (3) 10.7 1.6 4.5 +/-0.4 item 01 : 3.4~3.6 GHz band power amplifier item 51 : 3.4~3.6 GHz band digital radio communication 0.1 APPLICATION 0.2 QUALITY GRADE IG 12.0 RECOMMENDED BIAS CONDITIONS VDS= 10 (V) ID= 1.2 (A) RG= 100 (ohm) Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT Total power dissipation *1 Tch Channel temperature Tstg Storage temperature *1 : Tc=25 deg.C ELECTRICAL CHARACTERISTICS Symbol (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-8 ABSOLUTE MAXIMUM RATINGS Parameter (Ta=25 deg.C) Ratings -15 -15 3.75 -10 21 25 175 -65/+175 2.6 +/-0.2 17.0 +/-0.2 < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. Unit V V A mA mA W deg.C deg.C (Ta=25 deg.C) Test conditions IDSS Saturated drain current VDS=3V, VGS=0V gm Transconductance VDS=3V, ID=1.1A Gate to source cut-off voltage VGS(off) VDS=3V, ID=10mA P1dB Output power at 1dB gain compression GLP Linear power gain VDS=10V, ID(RF off)=1.2A, f=3.4~3.6GHz ID Drain current P.A.E. Power added efficiency IM3 3rd order IM distortion *1 Rth(ch-c) Thermal resistance *2 Delta Vf method *1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=3.6GHz, Delta f=5MHz *2 : Channel to case MITSUBISHI ELECTRIC Min. 35 11 -42 - Limits Typ. 1 37 13.5 1.1 32 -45 5 Max. 3.75 -4.5 1.8 6 Unit A S V dBm dB A % dBc deg.C/W June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004