MOTOROLA MGP7N60E Insulated gate bipolar transistor Datasheet

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by MGP7N60E/D
SEMICONDUCTOR TECHNICAL DATA
 N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
•
•
•
•
•
•
IGBT IN TO–220
9.0 A @ 90°C
10 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
Industry Standard TO–220 Package
High Speed: Eoff = 60 mJ/A typical at 125°C
High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
Low On–Voltage 2.0 V typical at 5.0 A, 125°C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
C
G
C
G
E
CASE 221A–09
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGE
± 20
Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
IC25
IC90
ICM
10
7.0
14
Adc
PD
81
0.65
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
RθJC
RθJA
1.5
65
°C/W
260
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TL
Apk
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
IGBT
 Motorola
Motorola, Inc.
1997 Device
Data
1
MGP7N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
—
—
870
—
—
mV/°C
15
—
—
Vdc
—
—
—
—
10
200
—
—
50
—
—
—
1.6
1.5
2.0
1.9
—
2.4
4.0
—
6.0
10
8.0
—
mV/°C
gfe
—
2.5
—
Mhos
pF
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
V(BR)ECS
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
Vdc
µAdc
mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 2.5 Adc)
(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
VCE(on)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
Cies
—
610
—
Coes
—
60
—
Cres
—
10
—
td(on)
—
22
—
tr
—
24
—
td(off)
—
64
—
tf
—
196
—
Eoff
—
0.20
0.34
mJ
td(on)
—
31
—
ns
tr
—
24
—
td(off)
—
195
—
tf
—
220
—
Eoff
—
0.38
—
mJ
QT
—
27.2
—
nC
Q1
—
7.0
—
Q2
—
13.7
—
—
7.5
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc,
Vd IC = 5
5.0
0 Ad
Adc,
VGE = 15 Vdc,
Vd L = 300 mH
H,
RG = 20 Ω, TJ = 25
25°C)
C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 360 Vdc,
Vd IC = 5
5.0
0 Ad
Adc,
Vd L = 300 mH
VGE = 15 Vdc,
H,
RG = 20 Ω, TJ = 125°C)
125 C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc,
Vdc IC = 5
5.0
0 Adc
Adc,
VGE = 15 Vdc)
ns
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
LE
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola IGBT Device Data
MGP7N60E
20
TJ = 25°C
15
12.5 V
10
VGE = 10 V
5
0
1
2
3
4
5
6
7
15
12.5 V
10
VGE = 10 V
5
8
3
4
5
6
7
Figure 2. Output Characteristics
8
6
TJ = 125°C
4
25°C
2
0
6
7
8
10
9
12
11
IC = 5.0 A
2.0
3.75 A
1.8
2.5 A
1.6
1.4
VGE = 15 V
80 mS PULSE WIDTH
1.2
1.0
–50
–25
25
0
50
75
100
125
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. VCE versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
VGE = 0 V
TJ = 25°C
1000
Cies
800
600
400
Coes
200
Cres
0
5
10
15
20
25
150
20
16
QT
12
Q1
Q2
8
TJ = 25°C
IC = 5.0 A
4
0
0
5
10
15
20
25
30
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. VGE versus Total Charge
Motorola IGBT Device Data
8
2.2
13
1200
0
2
Figure 1. Output Characteristics
VCE = 100 V
5 mS PULSE WIDTH
5
1
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE(on), COLLECTOR–TO–EMITTER ON–STATE
VOLTAGE (VOLTS)
10
0
VCE(on), COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
12
IC , COLLECTOR CURRENT (AMPS)
15 V
TJ = 125°C
0
0
C, CAPACITANCE (pF)
17.5 V
20 V
15 V
IC , COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
20
17.5 V
20 V
35
3
MGP7N60E
0.5
VCC = 360 V
VGE = 15 V
TJ = 125°C
0.4
Eoff , TURN–OFF ENERGY LOSSES (mJ)
Eoff , TURN–OFF ENERGY LOSSES (mJ)
0.5
IC = 5.0 A
0.3
3.75 A
0.2
2.5 A
0.1
10
15
20
25
30
35
40
45
0.3
3.75 A
0.2
2.5 A
0.1
0
50
25
50
75
100
125
GATE RESISTANCE (W)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Turn–Off Losses versus Gate
Resistance
Figure 8. Turn–Off Losses versus Junction
Temperature
0.6
150
100
VCC = 360 V
VGE = 15 V
RG = 20 W
TJ = 125°C
0.5
0.4
IC , COLLECTOR CURRENT (AMPS)
Eoff , TURN–OFF ENERGY LOSSES (mJ)
IC = 5.0 A
0
0
0.3
0.2
0.1
10
VGE = 15 V
RGE = 20 W
TJ = 125°C
1
0
0
4
VCC = 360 V
VGE = 15 V
RG = 20 W
0.4
1
2
3
4
5
6
7
8
1
10
100
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 9. Turn–Off Energy Losses versus
Collector Current
Figure 10. Reverse Biased Safe Operating
Area
1000
Motorola IGBT Device Data
MGP7N60E
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 9:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
GATE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
ISSUE Z
Motorola IGBT Device Data
5
MGP7N60E
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6
◊
MGP7N60E/D
Motorola IGBT Device
Data
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