isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8500 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 700V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1200 V VCEO(SUS) Collector-Emitter Voltage 700 V 8 V 2.5 A VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak 5 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8500 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100℃ 2.0 3.0 V Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1A 5.0 V Base-Emitter Saturation Voltage IC= 1A; IB= 0.33A IC= 1A; IB= 0.33A,TC=100℃ 1.5 1.5 V 700 VBE(sat) UNIT V B B VCE(sat)-2 MAX B B ICEV Collector Cutoff Current VCEV=1200V;VBE(off)=1.5V VCEV=1200V;VBE(off)=1.5V;TC=150℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE= 1200V; RBE= 50Ω,TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 50 250 pF 45 200 ns 200 2000 ns 1000 4000 ns 500 2000 ns Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 1A , VCC= 500V; IB1= 0.33A;tp= 50μs; VBE(off)= 5V Duty Cycle≤2.0% 2