Fairchild MJD200 D-pak for surface mount application Datasheet

MJD200
MJD200
D-PAK for Surface Mount Applications
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
40
Collector-Base Voltage
Units
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
8
V
IB
Base Current
1
A
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
10
A
W
Collector Dissipation (TC = 25°C)
12.5
Collector Dissipation (Ta = 25°C)
1.4
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
PC
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCBO(sus)
Parameter
* Collector Emitter Sustaining Voltage
Test Condition
IC=100mA, IB=0
Min.
25
ICEO
Collector Cut-off Current
VCB=40V, IE=0
100
nA
ICBO
Collector Cut-off Current
VEBO=8V, IC=0
100
nA
IEBO
Emitter Cut-off Current
VCE=1V, IC=500mA
70
hFE
* DC Current Gain
VCE=1V, IC=2A
VCE=2V, IC=5A
45
10
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
IC=2A, IB=200mA
IC=5A, IB=1A
Max.
Units
V
180
0.3
0.75
1.8
V
V
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC=5A, IB=2A
2.5
V
VBE (on)
* Base-Emitter ON Voltage
VCE=1V, IC=2A
1.6
V
fT
Current Gain Bandwidth Product
VCE=10V, IC=100mA
Cob
Output Capacitance
VCB=10V, IE=0, f=0.1MHz
65
MHz
80
pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD200
hFE, DC CURRENT GAIN
1000
100
VCE=2V
VCE=1V
10
1
0.01
0.1
1
10
VCE(sat), VBE(sat) [V], SATURATION VOLTAGE
Typical Characteristics
10
IC =10IB
VBE(sat)
1
at)
V CE(s
0.1
0.01
0.01
IC[A], COLLECTOR CURRENT
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
tR,tD[ns], TURN ON TIME
COB[pF], CAPACITANCE
VCC =30V
IC =10IB
100
10
1
0.1
1
10
1
tR
0.1
tD
0.01
0.01
100
VCB[V], COLLECTOR BASE VOLTAGE
10
Figure 4. Turn On Time
100
1000
100
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2001 Fairchild Semiconductor Corporation
10
5m
s
50
0
µ
1m s
s
µs
tF
10
0
10
IC[A], COLLECTOR CURRENT
VCC=30V
IC =10IB
IB1=IB2
tSTG
tSTG,tF[ns], TURN OFF TIME
1
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
10
0.01
0.1
DC
1
0.1
0.01
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A2, June 2001
MJD200
Typical Characteristics (Continued)
20.0
PC[W], POWER DISSIPATION
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD200
Package Demensions
D-PAK
0.50 ±0.10
MIN0.55
0.91 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(2XR0.25)
(1.00)
(3.05)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.30 ±0.10
(0.10)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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