MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP32 and TIP32C D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD32 : MJD32C VCEO Collector-Emitter Voltage : MJD32 : MJD32C Value - 40 - 100 Units V V - 40 - 100 V V V VEBO Emitter-Base Voltage -5 IC Collector Current (DC) -3 A ICP Collector Current (Pulse) -5 A IB Base Current -1 A PC Collector Dissipation (TC=25°C) 15 W Collector Dissipation (Ta=25°C) 1.56 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICES Parameter * Collector-Emitter Sustaining Voltage : MJD32 : MJD32C Test Condition IC = - 30mA, IB = 0 Min. Max. -40 -100 Units V V Collector Cut-off Current : MJD32 : MJD32C VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 -50 -50 µA µA : MJD32 : MJD32C VCE = - 40V, VBE = 0 VCE = - 100V, VBE = 0 -20 -20 µA µA -1 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 hFE * DC Current Gain VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3, IB = - 375mA -1.2 V VBE(on) * Base-Emitter ON Voltage VCE = - 4A, IC = - 3A -1.8 V fT Current Gain Bandwidth Product VCE = -10V, IC = - 500mA 25 10 3 50 MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD32/32C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -2V 100 10 1 -0.01 -0.1 -1 -10 -10 IC = 10 IB -1 V BE(sat) -0.1 VCE(sat) -0.01 -1E-3 -0.01 IC[A], COLLECTOR CURRENT -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 tR, tD [µs], TURN ON TIME Cob[pF], CAPACITANCE IC = 10.IB 100 10 1 tR, VCC =-30V tR, VCC =-10V 0.1 tD, VBE(off)=-2V -0.01 1 -0.1 -1 -10 -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Capacitance Figure 4. Turn On Time -10 ICP (max) -1 Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation -10 s -0.1 IC[A], COLLECTOR CURRENT 0µ -0.01 s -1 DC 32C -0.1 32 0.1 s tF, VCC (off)=-10V 0µ IC[A], COLLECTOR CURRENT 10 tF, V CC=-30V IC(max) 1m tSTG 1 50 tF, tSTG [µs], TURN OFF TIME IC = 10.IB -0.01 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2001 MJD32/32C Typical Characteristics (Continued) PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD32/32C Package Demensions D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.90) 6.10 ±0.20 2.30 ±0.10 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3