MJE220 THRU MJE225 w w w. c e n t r a l s e m i . c o m NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE220 series types are NPN silicon power transistors, manufactured by the epitaxial-base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE hFE hFE fT Cob SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJA ΘJC MJE220 MJE221 MJE222 60 40 CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=Rated VCBO VCB=Rated VCBO, TC=125°C VEB=7.0V IC=10mA (MJE220, MJE221, MJE222) 40 IC=10mA (MJE223, MJE224, MJE225) 60 IC=500mA, IB=50mA IC=1.0A, IB=100mA (MJE221, MJE224) IC=2.0A, IB=200mA (MJE220, MJE223) IC=4.0A, IB=1.0A IC=2.0A, IB=200mA VCE=1.0V, IC=500mA VCE=1.0V, IC=200mA (MJE220, MJE223) 40 VCE=1.0V, IC=200mA (MJE221, MJE224) 40 VCE=1.0V, IC=200mA (MJE222, MJE225) 25 VCE=1.0V, IC=1.0A (MJE221, MJE224) 20 VCE=1.0V, IC=1.0A (MJE222, MJE225) 10 VCE=1.0V, IC=2.0A (MJE220, MJE223) 20 VCE=10V, IC=100mA, f=10MHz VCE=10V, IE=0, f=100kHz MJE223 MJE224 MJE225 80 60 7.0 4.0 8.0 1.0 1.5 15 -65 to +150 83.4 8.34 TYP MAX 100 100 100 0.3 0.6 0.8 2.5 1.8 1.5 200 150 10 50 UNITS V V V A A A W W °C °C/W °C/W UNITS nA μA nA V V V V V V V V MHz pF R2 (26-November 2012) MJE220 THRU MJE225 NPN SILICON POWER TRANSISTOR TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R2 (26-November 2012) w w w. c e n t r a l s e m i . c o m