ISC MJE5181 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
MJE5180/5181/5182
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min)- MJE5180
= 140V(Min)- MJE5181
= 160V(Min)- MJE5182
·Low Saturation Voltage
·Complement to Type MJE5170/5171/5172
APPLICATIONS
·Designed for use in general purpose amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base
Voltage
Collector-Emitter
Voltage
VALUE
MJE5180
120
MJE5181
140
MJE5182
160
MJE5180
120
MJE5181
140
MJE5182
160
UNIT
V
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
Base Current-Continuous
2
A
IB
B
PC
PC
TJ
Tstg
Collector Power Dissipation
@ TC=25℃
Collector Power Dissipation
@ Ta=25℃
65
W
2
150
℃
-65~150
℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.92
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
MJE5180/5181/5182
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJE5180
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MJE5181
MIN
MAX
UNIT
120
IC= 30mA ;IB= 0
B
MJE5182
V
140
160
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 6A; VCE= 4V
2.0
V
MJE5180
VCE= 60V; IB= 0
0.7
MJE5181
VCE= 70V; IB= 0
0.7
MJE5182
VCE= 80V; IB= 0
0.7
MJE5180
VCE= 120V;VEB= 0
0.4
MJE5181
VCE= 140V;VEB= 0
0.4
MJE5182
VCE= 160V;VEB= 0
0.4
1.0
ICEO
ICES
Collector
Cutoff Current
Collector
Cutoff Current
B
B
B
B
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 4V
30
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
15
Current-Gain—Bandwidth Product
IC= 0.5A ;VCE= 10V;ftest= 1.0MHz
1.0
fT
isc Website:www.iscsemi.cn
2
mA
mA
mA
100
MHz
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