Central MJE710 Complementary silicon power transistor Datasheet

MJE710 MJE711
MJE720 MJE721
MJE712
MJE722
Central
PNP
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE710, MJE720
series types are Complementary Silicon Power
Transistors designed for low power amplifier and
medium speed switching aplications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
MJE710
MJE720
40
40
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise
SYMBOL
TEST CONDITIONS
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V (TC=125°C)
ICEO
VCE=1/2 Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA (MJE710, MJE720)
BVCEO
IC=50mA (MJE711, MJE721)
BVCEO
IC=50mA (MJE712, MJE722)
VCE(SAT)
IC=150mA, IB=15mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.5A, IB=300mA
VBE(SAT)
IC=1.5A, IB=300mA
VBE(ON)
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=150mA
hFE
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=1.0A
noted)
MIN
MJE711
MJE721
60
60
5.0
1.5
0.5
1.25
20
-65 to +150
100
6.25
MJE712
MJE722
80
80
MAX
100
500
500
1.0
40
60
80
0.15
0.4
1.0
1.3
0.95
UNITS
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
mA
V
V
V
V
V
V
V
V
40
20
8.0
R1 (16-September 2008)
Central
TM
Semiconductor Corp.
MJE710 MJE711
MJE720 MJE721
MJE712
MJE722
PNP
NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING:
FULL PART NUMBER
R1 (16-September 2008)
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