SavantIC Semiconductor Product Specification MJF45H11 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Fast switching speeds ·Low collector saturation voltage ·Complement to type MJF44H11 APPLICATIONS ·For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -10 A ICM Collector current-Peak -20 A PD Total power dissipation TC=25 36 Ta=25 2.0 Tj Junction temperature 150 Tstg Storage temperature -55~150 W THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance from junction to case 3.5 /W Rth j-A Thermal resistance from junction to ambient 62.5 /W SavantIC Semiconductor Product Specification MJF45H11 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA IB=0, VCE(sat) Collector-emitter saturation voltage IC=-8A; IB=-0.4A -1.0 V VBE(sat) Base-emitter saturation voltage IC=-8A ;IB=-0.8A -1.5 V ICES Collector cut-off current VCE=RatedBVCEO; VBE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-2A ; VCE=-1V 60 hFE-2 DC current gain IC=-4A ; VCE=-1V 40 fT Transition frequency IC=-0.5A ; VCE=-10V,f=20MHz 40 MHz Ccb Collector capacitance f=1MHz ; VCB=-10V 230 pF 0.3 µs 0.5 µs 0.14 µs -80 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A IB1=- IB2=-0.5A 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJF45H11