IXYS MKI50-12E7 Short circuit soa capability square rbsoa Datasheet

MWI 50-12 E7
MKI 50-12 E7
IC25
= 90 A
= 1200 V
VCES
VCE(sat) typ. = 1.9 V
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13
13
1
5
9
1
9
2
6
10
2
10
16
16
15
14
14
3
7
11
3
11
4
17
8
12
4
17
12
MWI
MKI
Features
IGBTs
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25°C to 150°C
VGES
IC25
IC80
TC = 25°C
TC = 80°C
ICM
VCEK
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
tSC
VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
SCSOA; non-repetitive
Ptot
TC = 25°C
Symbol
Conditions
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 2 mA; VGE = VCE
ICES
VCE = VCES;
1200
V
± 20
V
90
62
A
A
100
VCES
A
10
µs
350
W
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered, E 72873
Typical Applications
td(on)
tr
td(off)
tf
Eon
Eoff
1.9
2.1
4.5
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.4
V
V
6.5
V
0.8
mA
mA
200
nA
0.8
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
80
50
680
30
6.0
4.0
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 50 A
3.8
350
nF
nC
RthJC
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
0.35 K/W
451
IGES
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
1-4
MWI 50-12 E7
MKI 50-12 E7
Diodes
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
110
70
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.2
1.6
IRM
trr
IF = 50 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
40
200
RthJC
(per diode)
Conduction
A
A
2.6
V
V
A
ns
0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 24 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 6 mΩ
Thermal Response
Module
Symbol
Conditions
TVJ
TVJM
Tstg
operating
VISOL
Maximum Ratings
-40...+125
-40...+150
-40...+125
°C
°C
°C
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
Md
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
Rpin-chip
5
dS
dA
Creepage distance on surface
Strike distance in air
RthCH
with heatsink compound
6
6
Weight
IGBT (typ.)
Cth1 = 0.22 J/K; Rth1 = 0.26 K/W
Cth2 = 1.74 J/K; Rth2 = 0.09 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.151 J/K; Rth1 = 0.483 K/W
Cth2 = 1.003 J/K; Rth2 = 0.127 K/W
mΩ
mm
mm
0.02
K/W
180
g
pins 5, 6, 7, 8 and 15 for MWI only
© 2004 IXYS All rights reserved
451
Dimensions in mm (1 mm = 0.0394")
2-4
pins 5, 6, 7, 8 and 15 for MWI only
MWI 50-12 E7
MKI 50-12 E7
120
VGE = 17 V
A
15 V
120
A
100
13 V
11 V
100
15 V
VGE = 17 V
13 V
11 V
IC
IC
80
80
60
60
9V
9V
40
40
20
20
TVJ = 125°C
TVJ = 25°C
0
0
0
1
2
V
3
0
4
1
2
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
160
160
VCE = 20 V
A
IC
V 4
3
VCE
A
120
120
IF
TVJ = 125°C
80
80
40
40
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
0
0
4
6
8
10
12
0
V 14
1
2
3
V
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of
free wheeling diode
100
20
A
V
15
300
ns
trr
80
240
60
180
IRM
VGE
trr
10
40
5
VCE = 600 V
IC = 50 A
120
TVJ = 125°C
VR = 600 V
IF = 60 A
20
IRM
MWI5012E7
0
0
0
100
200
300
400 nC 500
0
400
600
800
A/µs
0
1000
Fig. 6
Typ. turn off characteristics of
free wheeling diode
451
Typ. turn on gate charge
200
-di/dt
QG
Fig. 5
60
© 2004 IXYS All rights reserved
3-4
MWI 50-12 E7
MKI 50-12 E7
20
td(on)
mJ
16
8
100
ns
90
tr
12
70
t
8
Eon
20
40
60
80
2
20
200
Eoff
tf
0
100 A 120
20
40
60
IC
Fig. 7
Typ. turn on energy and switching
times versus collector current
15.0
VCE = 600 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
mJ
12.5
Eon
10.0
td(on)
7.5
12
10
t
Eoff
8
6
100
4
2.5
50
2
0.0
0
0
tr
5.0
0
20
40
60
80
VCE = 600 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
mJ
150
Eon
100 Ω 120
td(off)
t
600
400
Eoff
200
tf
0
20
40
60
0
100 Ω 120
80
RG
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
120
1
A
diode
K/W
100
ICM
1200
ns
1000
800
RG
Fig. 9
0
100 A
80
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
300
ns
250
200
400
RG = 22 Ω
TVJ = 125°C
30
0
0
VCE = 600 V
VGE = ±15 V
4
10
0
600
t
60
40
RG = 22 Ω
TVJ = 125°C
4
td(off)
6
Eoff
50
VCE = 600 V
VGE = ±15 V
ns
mJ
80
Eon
800
IGBT
0.1
80
ZthJC
60
0.01
40
single pulse
0.001
RG = 22 Ω
TVJ = 125°C
20
0
0
200
400
600
800 1000 1200 1400 V
VCE
MWI5012E7
0.01
0.1
1
s 10
t
Fig. 12 Typ. transient thermal impedance
451
Fig. 11 Reverse biased safe operating area
RBSOA
0.0001
0.00001 0.0001 0.001
© 2004 IXYS All rights reserved
4-4
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