Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2NC 2 1 1 2 1404A 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol WIV Working Inverse Voltage Parameter IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 A A -55 to +150 °C 150 °C TSTG Storage Temperature Range TJ Operating Junction Temperature Value 175 Units V * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter PD Power Dissipation Derate above 25°C RθJA Thermal Resistance, Junction to Ambient Max. Units MMBD1401A - 1405A* 350 2.8 mW mW/°C 357 °C/W * Device mounted on glass epoxy PCB 1.6” × 1.6” × 0.06”; mounting pad for the collector lead min. 0.93 in 2 ©2004 Fairchild Semiconductor Corporation MMBD1401A / 1403A / 1404A / 1405A, Rev. A1 MMBD1401A / 1403A / 1404A / 1405A MMBD1401A / 1403A / 1404A / 1405A Symbol TA=25°C unless otherwise noted BV Parameter Breakdown Voltage Test Conditions IR = 100µA IR Reverse Leakage VR = 120V VR = 175V VF Forward Voltage MMBD1401A/1403A MMBD1404A/1405A MMBD1401A/1403A MMBD1404A/1405A IF = 10mA IF = 50mA IF = 200mA IF = 200mA IF = 300mA IF = 300mA Min. 250 760 Max. Units V 40 100 nA nA 800 920 1.1 1.0 1.25 1.1 mV mV V V V V CO Diode Capacitance VR = 0, f = 1.0MHz 2.0 pF TRR Reverse Recovery Time IF = IR = 30mA IRR = 1.0mA, RL = 100Ω 50 nS 325 IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) Typical Characteristics Ta= 25°C 300 275 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 50 30 20 10 0 55 100 Ta= 25°C 80 70 60 50 40 30 200 220 240 VR - REVERSE VOLTAGE (V) 255 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature Figure 3. Reverse Current vs Reverse Voltage IR - 180 to 255V ©2004 Fairchild Semiconductor Corporation Figure 2. Reverse Current vs Reverse Voltage IR - 55 to 205V V VFF - FORWARD VOLTAGE (mV) IIRR - REVERSE CURRENT (nA) 100 20 180 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100µA 90 Ta= 25°C 40 Ta= 25°C 450 400 350 300 250 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 Figure 4. Forward Voltage vs Forward Current VF - 1.0 to 100µA MMBD1401A / 1403A / 1404A / 1405A, Rev. A1 MMBD1401A / 1403A / 1404A / 1405A Electrical Characteristics (Continued) VF - 0.1 to 10 mA VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) 725 Ta= 25°C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 1.2 1.1 1 0.9 0.8 0.7 10 1.3 800 Ta= -40°C 600 Ta= 25°C 400 Ta= +80°C 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Ta= 25°C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 Figure 7. Forward Voltage vs Ambient Temperature VF - 1.0µA - 10mA (- 40 to +80°C) 500 50 40 30 20 0 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) Figure 9. Reverse Recovery Time vs Reverse Recovery Current (Irr) ©2004 Fairchild Semiconductor Corporation 4 6 8 10 REVERSE VOLTAGE (V) IR 400 300 12 14 15 -F OR WA RD CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 3 2 Figure 8. Capacitance vs Reverse Voltage VR - 0 to 5V I - CURRENT (mA) REVERSE RECOVERY (nS) Ta= 25°C 1.3 Figure 6. Forward Voltage vs Forward Current VF - 10 to 800mA CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (mV) Figure 5. Forward Voltage vs Forward Current VF - 0.1 to 10mA 1.4 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) Figure 10. Average Rectified Current(IO) & Forward Current (IF) vs Ambient Temperature(TA) MMBD1401A / 1403A / 1404A / 1405A, Rev. A1 MMBD1401A / 1403A / 1404A / 1405A Typical Characteristics MMBD1401A / 1403A / 1404A / 1405A Typical Characteristics (Continued) PD - POWER DISSIPATION (mW) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 Figure 11. Power Derating Curve ©2004 Fairchild Semiconductor Corporation MMBD1401A / 1403A / 1404A / 1405A, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. 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LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13