TSC MMBT3904RFG 300mw, npn small signal transistor Datasheet

MMBT3904
Taiwan Semiconductor
Small Signal Product
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008g (approximately)
- Marking Code: 1AM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
PD
300
mW
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
IC
200
mA
TJ , TSTG
-55 to +150
Power Dissipation
Collector Current
Junction and Storage Temperature Range
o
C
Notes:1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
SYMBOL
MIN
MAX
UNIT
Collector-Base Breakdown Voltage
IC = 10 μA
IE = 0
V(BR)CBO
60
-
V
Collector-Emitter Breakdown Voltage
IC = 1 mA
IB = 0
V(BR)CEO
40
-
V
Emitter-Base Breakdown Voltage
IE = 10 μA
IC = 0
V(BR)EBO
6
-
V
Collector Cut-off Current
VCB = 60 V
IE = 0
ICBO
-
0.1
μA
Collector Cut-off Current
VCE = 30 V
VBE(OFF) = 3 V
ICEO
-
50
nA
Emitter Cut-off Current
VEB = 5 V
IC = 0
IEBO
-
0.1
μA
100
400
60
-
30
-
-
0.3
V
DC Current Gain
Collector-Emitter Saturation Voltage
VCE = 1 V
IC = 10 mA
VCE = 1 V
IC = 50 mA
VCE = 1 V
IC = 100 mA
IC = 50 mA
IB = 5 mA
VCE(sat)
hFE
IC = 50 mA
IB = 5 mA
VBE(sat)
-
0.95
V
Transition frequency
VCE = 20 V
IC = 10 mA
f= 100MHz
fT
250
-
MHz
Delay time
VCC = 3 V
VBE = 0.5 V
IC = 10 mA
td
-
35
ns
IB1 = 1.0 mA
tr
-
35
ns
IC = 10 mA
ts
-
200
ns
tf
-
50
ns
Base-Emitter Saturation Voltage
Rise time
Storage time
VCC = 3 V
Fall time
IB1 = IB2 = 1.0 mA
Document Number: DS_S1412034
Version: D14
MMBT3904
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig.1 Typical Pulsed Current Gain
VS. Collector Current
Fig. 2 Collector-Emitter Saturation Voltage
VS. Collector Current
0.20
VCE = 5V
125 °C
400
300
V CESAT- Collector-Emitter Voltage (V)
hFE - Typical Pulsed Current Gain
500
25 °C
200
100
- 40 °C
0
0.1
1.0
10.0
100.0
β = 10
0.15
125 °C
0.10
25 °C
0.05
- 40 °C
0.00
0
1
IC - Collector Current (mA)
100
IC - Collector Current (mA)
Fig. 3 Base-Emitter Saturation Voltage
VS. Collector Current
Fig. 4 Base-Emitter On Voltage
VS. Collector Current
1.1
1
1
V BE(ON) - Base-Emitter On Voltage (V)
VBESAT - Base-Emitter Voltage (V)
10
β = 10
0.9
0.8
0.7
- 40 °C
0.6
25 °C
0.5
0.4
125 °C
0.3
0.1
1
10
100
VCE= 5V
0.8
- 40 °C
25 °C
0.6
0.4
125 °C
0.2
0.1
IC - Collector Current (mA)
1
10
100
IC - Collector Current (mA)
Fig. 5 Collector-Cutoff Current
VS. Ambient Temperature
Fig. 6 Capacitance VS.
Reverse Bias Voltage
1000
10
f = 1.0 MHz
VCB= 30V
Capacitance (pF)
ICBO-Collector Current (nA)
100
10
1
C
ibo
Cobo
0.1
0.01
25
50
75
100
125
TA - Ambient Temperature (OC)
Document Number: DS_S1412034
150
1
0.1
1
10
100
Reverse Bias Voltage (V)
Version: D14
MMBT3904
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
PART NO.
PACKING
PACKING CODE
SUFFIX (Note 1)
CODE
SUFFIX
MMBT3904
-xx
RF
G
R5
PACKAGE
PACKING
3K / 7" Reel
SOT-23
10K / 13" Reel
Note 1: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PREFERRED P/N PART NO.
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
DESCRIPTION
SUFFIX
Multiple manufacture
source
MMBT3904 RF
MMBT3904
RF
MMBT3904 RFG
MMBT3904
RF
G
Multiple manufacture
source
Green compound
RF
G
Defined manufacture
source
Green compound
G
Defined manufacture
source
Green compound
MMBT3904-D0 RFG MMBT3904
MMBT3904-B0 RFG MMBT3904
-D0
-B0
RF
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
2.70
3.10
0.106
0.122
B
1.10
1.50
0.043
0.059
C
0.30
0.51
0.012
0.020
D
1.78
2.04
0.070
0.080
E
2.10
2.64
0.083
0.104
F
0.89
1.30
0.035
0.051
G
0.55 REF
0.022 REF
H
0.10 REF
0.004 REF
Unit (mm)
Unit (inch)
TYP
TYP
Z
2.8
0.11
X
0.7
0.03
Y
0.9
0.04
C
1.9
0.07
E
1.0
0.04
SUGGEST PAD LAYOUT
DIM
Document Number: DS_S1412034
Version: D14
MMBT3904
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412034
Version: D14
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