Fairchild MMBT4401K Pnp epitaxial silicon transistor Datasheet

MMBT4401K
PNP Epitaxial Silicon Transistor
Switching Transistor
Marking
3
2XK
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Value
Units
VCBO
Collector-Base Voltage
Parameter
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
600
mA
PC
Collector Dissipation
350
mW
TSTG
Storage Temperature
150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
60
V
V
BVCEO
Collector-Emitter Breakdown Voltage *
IC = 1.0mA, IB = 0
40
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
6
IBEV
Base Cut-off Current
VCE = 35V, VEB = 0.4V
ICEX
Collector Cut-off Current
VCE = 35V, VEB = 0.4V
hFE
DC Current Gain *
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
VCE = 2V, IC = 500mA
20
40
80
100
40
V
100
nA
100
nA
300
VCE (sat)
Collector-Emitter Saturation Voltage *
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
VBE (sat)
Base-Emitter Saturation Voltage *
I C= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.75
fT
Current Gain Bandwidth Product
IC = 20mA, VCE = 10V, f = 100MHz
250
Cob
Output Capacitance
VCB=5V, IE=0, f=100KHz
6.5
pF
tON
Turn On Time
VCC = 30V, VBE = 2V
IC = 150mA, IB1 = 15mA
35
ns
tOFF
Turn Off Time
VCC = 30V, IC = 150mA
IB1 = IB2 = 15mA
255
ns
0.4
0.75
V
V
0.95
1.2
V
V
MHz
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2005 Fairchild Semiconductor Corporation
MMBT4401K Rev. A
1
www.fairchildsemi.com
MMBT4401K PNP Epitaxial Silicon Transistor
February 2005
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. DC current Gain
hFE, DC CURRENT GAIN
1000
VCE = 1V
100
10
1
10
100
10
IC = 10 IB
VBE(sat)
1
0.1
VCE(sat)
0.01
1
1000
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
10000
IE = 0
f = 100KHz
Ccb [pF], CAPACITANCE
10
1
1
10
100
100
10
1
VCB [V], COLLECTOR-BASE VOLTAGE
10
100
IC[mA], COLLECTOR CURRENT
2
MMBT4401K Rev. A
VCE = 10V
1000
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MMBT4401K PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
MMBT4401K PNP Epitaxial Silicon Transistor
Mechanical Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
3
MMBT4401K Rev. A
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
4
MMBT4401K Rev. A
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MMBT4401K PNP Epitaxial Silicon Transistor
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