LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 5088LT 15089LT1 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO V CBO V EBO IC 30 35 25 30 Vdc Vdc Vdc mAdc 4.5 50 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient PD 225 mW R θJA 1.8 556 mW/ °C °C/W PD 300 mW 2.4 mW/ °C R θJA 417 °C/W T J , T stg –55 to + 150 °C Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C Thermal Resistance,Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 25 — — 35 30 — — — — 50 50 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B = 0) V (BR)CEO MMBT5088 MMBT5089 Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Collector Cutoff Current (V CB = 20 Vdc, I E = 0 ) (V CB = 15 Vdc, I E = 0 ) Vdc V(BR)CBO MMBT5088 MMBT5089 Vdc I CBO MMBT5088 MMBT5089 nAdc I EBO Emitter Cutoff Current nAdc MMBT5088 — 50 (VEB(off) = 4.5Vdc, I C = 0) MMBT5089 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. — 100 (VEB(off)= 3.0Vdc, I C = 0) M18–1/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 PNP MMBT5089LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 300 400 350 450 300 400 900 1200 — — — — — 0.5 — 0.8 50 — — 4.0 — 10 350 450 1400 1800 — — 3.0 2.0 Unit ON CHARACTERISTICS DC Current Gain (IC=100µAdc,VCE=5.0Vdc) hFE MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 (IC=1.0mAdc,V CE=5.0Vdc) (IC = 10mAdc, VCE=5.0Vdc) Collector–Emitter Saturation Voltage (IC=10mAdc,IB=1.0mAdc) Base–Emitter Saturation Voltage (IC =10mAdc,IB=1.0mAdc) — VCE(sat) Vdc VBE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC= 500 µAdc,VCE=5.0Vdc,f=20MHz) Collector–Base Capacitance (VCB=5.0Vdc,IE=0,f=1.0MHz emitter guarded) Emitter–Base Capacitance (VEB=0.5Vdc,IC=0,f=1.0MHz collector guarded) Small Signal Current Gain (IC=1.0mAdc,VCE=5.0Vdc,f=1.0kHz) f MHz T C cb pF C eb pF h fe MMBT5088 MMBT5089 Noise Figure (IC=100µAdc,VCE=5.0Vdc, RS=10κΩ,f=1.0kHz) — NF MMBT5088 MMBT5089 dB RS in ~ en IDEAL TRANSISTOR Figure 1.Transistor Noise Model M18–2/4 LESHAN RADIO COMPANY, LTD. MMBT5088LT1 MMBT5089LT1 NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH=1.0Hz 20 e n , NOISE VOLTAGE (nV) e n , NOISE VOLTAGE (nV) BANDWIDTH=1.0Hz ~0 R S~ I C = 10 mA 3.0mA 10 1.0mA 7.0 5.0 20 R S~ ~0 f = 10Hz 10 100Hz 7.0 10kHz 1.0kHz 5.0 300µA 100kHz 3.0 3.0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 0.01 0.02 0.2 0.5 1.0 2.0 5.0 10 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current 10 20 BANDWIDTH=1.0Hz I C=10mA NF, NOISE FIGURE (dB) I n , NOISE CURRENT (pA) 0.1 Figure 2. Effects of Frequency 7.0 5.0 3.0 3.0mA 2.0 1.0mA 1.0 0.7 300µA 0.5 100µA 0.3 0.2 0.1 0.05 10µA BANDWIDTH=10 Hz to15.7 kHz 12 I C =1.0 mA 500µA 8.0 100µA 10µA 4.0 30µA R S~ ~0 10 20 16 0 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) R S , SOURCE RESISTANCE (OHMS) Figure 4. Noise Current Figure 5. Wideband Noise Figure 300 200 20 BANDWIDTH=1.0Hz I C =10mA 100µA 100 70 3.0mA 50 1.0mA 30 300µA 20 30µA 10 7.0 10µA NF, NOISE FIGURE (dB) V T , TOTAL NOISE VOLTAGE (nV) 100 Hz NOISE DATA I C = 10mA 16 3.0mA 1.0mA 12 300µA 8.0 100µA 4.0 30µA 5.0 10µA BANDWIDTH=1.0Hz 0 3.0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure 50k 100k M18–3/4 LESHAN RADIO COMPANY, LTD. h FE, DC CURRENT GAIN (NORMALIZED) MMBT5088LT1 MMBT5089LT1 4.0 3.0 V CE =5.0 V T A=125°C 2.0 25°C 1.0 –55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) R θVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) Figure 8. DC Current Gain 1.0 0.8 V BE @V CE = 5.0V 0.4 0.2 V CE(sat) @ I C /I B =10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –1.2 –1.6 T J=25°C to 125°C –2.0 –55°C to25°C –0.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients 500 0.6 C, CAPACITANCE (pF) –0.8 Figure 9. “On” Voltages 0.8 T J = 25°C C ob 0.4 C ib C eb 0.3 C cb 0.2 1.0 0.8 0.1 –0.4 I C , COLLECTOR CURRENT (mA) 0.2 0.5 1.0 2.0 5.0 10 20 50 100 300 PRODUCT (MHz) 0.6 f T , CURRENT– GAIN — BANDWIDTH V, VOLTAGE (VOLTS) T J =25°C 200 100 V 70 CE = 5.0 V T J = 25°C 50 1.0 2.0 5.0 10 20 50 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product M18–4/4