WILLAS FM120-M+ THRU MMBT5551WT1 FM1200-M+ 1.0ADUAL SURFACE BARRIER RECTIFIERS -20V- 200V NPNMOUNT SMALLSCHOTTKY SIGNAL SURFACE SOD-123+ PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to •FEATURE optimize board space. We power declareloss, thathigh the material of product compliance with RoHS requirements. efficiency. •ƽLow Pb-Free package is available current capability, low forward voltage drop. • High RoHS product for packing code suffix ”G” surge capability. • High Halogen free product for packing code suffix “H” protection. • Guardring for overvoltage Ultra high-speed switching. •DEVICE MARKING AND ORDERING INFORMATION epitaxial planar chip, metal silicon junction. • SiliconDevice Marking Shipping • Lead-free parts meet environmental standards of G1 MIL-STD-19500 MMBT5551WT1 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 3000/Tape&Reel • RoHS product for packing code suffix "G" 0.012(0.3) Typ. SOT–323 MAXIMUM Halogen freeRATINGS product for packing code suffix "H" Mechanical Rating data Symbol Value Unit : UL94-V0 rated flame retardant • Epoxy 160 Collector–Emitter Voltage V CEO : Molded plastic, SOD-123H • Case 180 Collector–Base Voltage V CBO , • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter–Base Voltage V EBO Method 2026 Collector Current —byContinuous Polarity : Indicated cathode bandI C • Mounting Position : Any •THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram Vdc 6.0 Vdc 600 mAdc Characteristic 3 0.040(1.0) COLLECTOR 0.024(0.6) Vdc Symbol 0.031(0.8) Typ. 0.031(0.8) Typ. 1 BASE 2 EMITTER Dimensions in inches and (millimeters) Max Unit TotalMAXIMUM Device Dissipation FR– 5 Board, RATINGS AND (1) ELECTRICAL PD CHARACTERISTICS 225 mW TA = 25°C Ratings at 25℃ ambient temperature unless otherwise specified. Derate above 25°C 1.8 mW/°C Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance, Junction to Ambient RθJA 556 °C/W For capacitive load, derate current by 20% Total Device Dissipation 300 mW FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT PD FM130-MH FM140-MH FM150-MH SYMBOL FM120-MH RATINGS Alumina Substrate, (2) TA = 25°C Marking Code 12 13 14 15 18 10 115 120 Derate above 25°C 2.4 mW/°C 16 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts Thermal Resistance, Junction to Ambient VRRM RθJA 417 °C/W Volts 14 21 –55 to28 35 °C 42 56 70 105 140 Maximum RMS Voltageand Storage Temperature VRMS J , Tstg Junction T +150 Maximum DC Blocking Voltage VDC 20 30 40 50 60 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Maximum Average Forward Rectified Current IO Characteristic Peak Forward Surge Current 8.3 ms single half sine-wave superimposed rated load (JEDEC method) OFFonCHARACTERISTICS Typical Thermal Resistance (Note 2) Collector–Emitter Breakdown Voltage(3) IFSM CJ Operating Temperature Range TJ Storage Temperature Range Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 120Vdc, I E = 0) NOTES: Min Max 160 — 150 200 30 40 120 V(BR)CBO 180 Volts Amps Unit Amps ℃/W PF Vdc -55 to +150 ℃ - 65 to +175 TSTG ℃ Vdc — SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage V (BR)CEO -55 to +125 100 1.0 RΘJA Typical Junction Capacitance (Note 1) (I C = 1.0 mAdc, I B = 0) Symbol 80 @T A=125℃ IR 0.50 V (BR)EBO 0.70 6.0 0.85 — I CBO 0.5 10 Vdc — 50 nAdc — 50 µAdc — 50 0.9 0.92 Volts mAmp 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. ( V CB = From 120Vdc, I E =to0,Ambient T A=100 °C) 2- Thermal Resistance Junction Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 2012-06 2012-11 I EBO nAdc WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5551WT1 FM1200-M+ 1.0ADUAL SURFACE BARRIER RECTIFIERS -20V- 200V NPNMOUNT SMALLSCHOTTKY SIGNAL SURFACE SOD-123+ PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H = 25°C ELECTRICAL CHARACTERISTICS profile surface mounted application(TinAorder tounless otherwise noted) (Continued) • Low optimize board space.Characteristic Symbol loss, high efficiency. • Low ONpower CHARACTERISTICS capability, low forward voltage drop. • High current DC Current Gain capability. • High surge (I C = 1.0 mAdc, V CE = 5.0 Vdc) • Guardring for overvoltage protection. • Ultra high-speed switching. C = 10 mAdc, V CE = 5.0 Vdc) planar chip, metal silicon junction. • Silicon(I epitaxial • Lead-free parts meet environmental standards of Min Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. hFE –– (I C = 50 mAdc, V CE = 5.0Vdc) MIL-STD-19500 /228 80 — 80 250 30 — — 0.15 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" Halogen free product forSaturation packing code suffix "H" Collector–Emitter Voltage VCE(sat) Mechanical data (I = 10 mAdc, I = 1.0 mAdc) C Vdc B 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant C = 50 mAdc, I B = 5.0 mAdc ) plastic, SOD-123H • Case (I: Molded , • Terminals :Plated terminals, solderable per MIL-STD-750 — 0.20 0.031(0.8) Typ. Base–Emitter Saturation Voltage Method 2026 (I C = 10 mAdc, I B = 1.0 mAdc) Polarity : Indicated by cathode band V 0.031(0.8) Typ. Vdc BE(sat) — • • Mounting (I C =Position 50 mAdc,: Any I B = 5.0 mAdc) • Weight : Approximated 0.011 gram 1.0 Dimensions in inches and (millimeters) — 1.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts IO 1.0 Amps IFSM 30 Amps RΘJA 40 120 ℃/W Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5551WT1 FM1200-M+ 1.0ADUAL SURFACE BARRIER RECTIFIERS -20V- 200V NPNMOUNT SMALLSCHOTTKY SIGNAL SURFACE SOD-123+ PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features h FE, DC CURRENT GAIN (NORMALIZED) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 500 surface mounted application in order to • Low profile optimize board space. 300 T J = +125°C loss, high efficiency. • Low power 200 low forward voltage drop. • High current capability, +25°C capability. • High surge 100 protection. • Guardring for overvoltage –55°C 50 switching. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon 30 20 parts meet environmental standards of • Lead-free V CE = 1.0 V 0.146(3.7) 0.130(3.3) V CE = 5.0 V 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 for packing code suffix "G" • RoHS product 10 Halogen7.0free product for packing code suffix "H" 5.0 Mechanical data 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) • Epoxy : UL94-V0 rated flame retardant I C , COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , 15. DC Current Gain Figure • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 50 70 0.024(0.6) 30 100 0.031(0.8) Typ. Method 2026 1.0 • Polarity : Indicated by cathode band T J = 25°C • Mounting Position : Any 0.8 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) I C = 1.0 mA 10 mA 30 mA 100 mA 0.6 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half0.4wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 0.005 0.01 Maximum RMS Voltage 0.02 0.05 Maximum DC Blocking Voltage 0.1 superimposed on rated load (JEDEC method) 1 I C, COLLECTOR CURRENT (µA) 20 100 105 50 150 Volts 140 Volts 200 Volts 40 120 ℃/W 1.0 T J = 25°C -55 to +125 VF Maximum Average10Reverse Current at @T A=25℃ REVERSE –3 FORWARD PF -55 to +150 0.8 ℃ - 65 to +175 ℃ V BE(sat) @ I C /I B = 10 0.6 @T A=125℃ 0.50 IR 0.70 0.9 0.85 0.92 0.5 0.4 Volts mAmps 10 0.2 V CE(sat) @ I C /I B = 10 1- Measured at 1 MHZ–5and applied reverse voltage of 4.0 VDC. 10 –0.4 –0.3 –0.2to Ambient –0.1 0 2- Thermal Resistance From Junction 2012-06 80 70 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 10 –2 75°C Maximum Forward Voltage at 1.0A DC 2012-11 60 10 120 200 Amps CES CHARACTERISTICS 56 115 150 30 TSTG I C= I 5.0 42 10 100 Amps TJ T J = 125°C 2.0 18 80 Figure 16. Collector Saturation Region 1.0 CJ Storage Temperature Range 35 16 60 IFSM 0 25°C 28 1.0 20 I B , BASE 30 CURRENT 40 50 (mA) 10 Operating Temperature Range 10 –4 0.5 15 50 VDC V CE = 30 V Typical Junction Capacitance (Note 1) NOTES: 21 RΘJA 10 Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage 0.2 14 40 14 IO Peak Forward Surge Current 8.3 ms single half sine-wave 13 30 VRMS Maximum Average Forward Rectified Current 10 –1 12 20 VRRM Maximum Recurrent0 Peak Reverse Voltage V, VOLTAGE (VOLTS) 0.2 0.1 0.2 0 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE–EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut–Off Region Figure 4. “On” Voltages 100 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5551WT1 NPN MOUNT SMALLSCHOTTKY SIGNAL SURFACE FM1200-M+ 1.0ADUAL SURFACE BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features , TEMPERATURE COEFFICIENT (mV/°C) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 2.5 surface mounted application in order to • Low profile optimize2 board space. T J = –55°C to +135°C loss, high efficiency. • Low power 1.5 • High current capability, low forward voltage drop. 1.0 • High surge capability. θ VC for V CE(sat) 0.5 for overvoltage protection. • Guardring 0 • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon–0.5 parts meet environmental standards of • Lead-free –1.0 • 0.146(3.7) 0.130(3.3) 10.2 V V 0.5 1.0 2.0 3.0 5.0 10 100 30 V 0.071(1.8) RC 3.0 k 0.056(1.4) 0.25 mF 10 ms RB INPUT PULSE V out 5.1 k 20 30 50 1N914 0.040(1.0) 0.024(0.6) 100 θ • Epoxy : UL94-V0 rated flame retardant I C ,SOD-123H COLLECTOR CURRENT (mA) • Case : Molded plastic, , Figure 5. Temperature Coefficients • Terminals :Plated terminals, solderable per MIL-STD-750 100 V in t r , t f <10 ns DUTY CYCLE = 1.0% Mechanical data –2.5 0.2 0.3 V CC –8.8 V V in θ VB for V BE(sat) MIL-STD-19500 /228 RoHS –1.5 product for packing code suffix "G" –2.0free product for packing code suffix "H" Halogen 0.1 V BB 0.012(0.3) Typ. Values Shown are for I C @ 10 mA 0.031(0.8) Typ. Figure 6. Switching Time Test Circuit 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band 100 70 Position : Any • Mounting 50 • Weight : Approximated 0.011 gram C, CAPACITANCE (pF) I C /I B = 10 T J = 25°C T J = 25°C 500 30 t r @ V CC = 120 V 300 200 20 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS t r @ V CC = 30 V RATINGS 3.0 1.0 0.3 t d @ V EB(off) = 1.0 V 50 VRRM 12 20 13 30 20 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts VRMS 14 21 10 28 35 42 56 70 105 140 Volts 40 50 150 200 Volts 2.0 0.2 100 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH C obo FM130-MH FM140-MH 30 V CC = 120 V Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage t, TIME (ns) Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase 7.0 half wave, 60Hz, resistive of inductive load. C ibo For capacitive5.0load, derate current by 20% Marking Code Dimensions in inches and (millimeters) 1000 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 20 20 VDC V R , REVERSE VOLTAGE (VOLTS) Maximum Average Forward Rectified Current IO Maximum DC Blocking Voltage 0.2 0.3 0.5 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 5000 Typical Junction Capacitance (Note 1) 3000 Operating Temperature Range 2000 Storage Temperature Range 2.0 3.0 60 5.0 10 80 20 30 100 50 100 200 I C , COLLECTOR CURRENT (mA) 1.0 Figure 7. Capacitances Figure Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 Amp 8. Turn–On Time IFSM RΘJA CJ -55 to +125 TSTG Amp 40 ℃/W I C /I B = 10 120 T J = 25°C t f @ V CC = 120 V TJ 30 PF -55 to +150 ℃ - 65 to +175 t f @ V CC = 30 V ℃ 1000 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT t, TIME (ns) Maximum Forward Voltage at 1.0A DC 500 Maximum Average Reverse Current at @T A=25℃ 300 Rated DC Blocking Voltage @T A=125℃200 NOTES: VF 0.50 0.70 0.85 0.5 t IsR@ V CC = 120 V 10 0.9 0.92 Volts mAmp 100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT5551WT1 FM1200-M+ 1.0ADUAL SURFACE BARRIER RECTIFIERS -20V- 200V NPNMOUNT SMALLSCHOTTKY SIGNAL SURFACE SOD-123+ PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-323 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .087(2.20) • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .070(1.80) 0.146(3.7) 0.130(3.3) .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.012(0.3) Typ. • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .096(2.45) .078(2.00) Mechanical data 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .010(0.25) .003(0.08) .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave .016(0.40) IO .008(0.20) IFSM superimposed on rated load (JEDEC method) 15 50 16 60 TJ Operating Temperature Range Storage Temperature Range Maximum Forward Voltage at 1.0A DC 120 200 Volts 35 42 56 70 105 140 50 60 80 100 150 200 Volts -55 to +125 1.0 Amps 30 Amps 40 120 ℃/W PF -55 to +150 ℃ - 65 to +175 0.025 0.65 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.025 0.65 VF Maximum Average Reverse Current at @T A=25℃ 0.50 0.70 0.85 0.5 IR @T A=125℃ 10 NOTES: 0.9 0.92 Volts mAmp 0.075 1.9 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 115 150 28 TSTG CHARACTERISTICS 10 100 40 Dimensions in inches and (millimeters) CJ Typical Junction Capacitance (Note 1) 18 80 Volts RΘJA Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage 14 40 .043(1.10) .032(0.80) Marking Code 0.035 0.9 0.028 0.7 2012-06 2012-11 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.