Fairchild MMBT5771 Pnp switching transistor Datasheet

2N5771
MMBT5771
C
E
C
TO-92
BE
SOT-23
B
Mark: 3R
PNP Switching Transistor
This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
15
V
VCBO
Collector-Base Voltage
15
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 1997 Fairchild Semiconductor Corporation
Max
Units
2N5771
350
2.8
125
*MMBT5771
225
1.8
357
556
mW
mW/°C
°C/W
°C/W
2N5771 / MMBT5771
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
I C = 3.0 mA, IB = 0
15
V
V(BR)CES
Collector-Emitter Breakdown Voltage
I C = 100 µA, VBE = 0
15
V
V(BR)CBO
Collector-Base Breakdown Voltage
I C = 100 µA, I E = 0
15
V
V(BR)EBO
Emitter-Base Breakdown Voltage
I E = 100 µA, IC = 0
4.5
V
ICBO
Collector Cutoff Current
VCB = 8.0 V, IE = 0
10
nA
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE = 8.0 V, VBE = 0
VCE = 8.0 V, VBE = 0, TA= 125°C
VEB = 4.5 V, IC = 0
10
5.0
1.0
nA
µA
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat )
Collector-Emitter Saturation Voltage
VBE( sat)
Base-Emitter Saturation Voltage
I C = 1.0 mA, VCE = 0.5 V
I C = 10 mA, VCE = 0.3 V
I C = 10mA,VCE = 0.3V,TA = -55°C
I C = 50 mA, VCE = 1.0 V
I C = 1.0 mA, IB = 0.1 mA
I C = 10 mA, IB = 1.0 mA
I C = 50 mA, IB = 5.0 mA
I C = 1.0 mA, IB = 0.1 mA
I C = 10 mA, IB = 1.0 mA
I C = 50 mA, IB = 5.0 mA
35
50
20
40
0.75
120
0.15
0.18
0.6
0.8
0.95
1.5
V
V
V
V
V
V
3.0
pF
3.5
pF
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hfe
Small-Signal Current Gain
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
I C = 10 mA, VCE = 10 V,
f = 100 MHz
8.5
MHz
SWITCHING CHARACTERISTICS
ts
Storage Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
I C = 10 mA, VCC = 1.5 V,
I B1 = IB2 = 1.0 mA
I C = 10 mA, VCC = 1.5 V,
I B = 1.0 mA
I C = 10 mA, VCC = 1.5 V,
I B1 = IB2 = 1.0 mA
20
ns
15
ns
20
ns
2N5771 / MMBT5771
PNP Switching Transistor
N
2N6427
MMBT6427
C
E
C
B
TO-92
SOT-23
E
B
Mark: 1V
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
40
V
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
1.2
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
Units
2N6427
625
5.0
83.3
*MMBT6427
350
2.8
200
357
mW
mW/°C
°C/W
°C/W
2N6427 / MMBT6427
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 10 µA, IC = 0
VCE = 25 V, IB = 0
12
ICEO
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
V
1.0
µA
VCB = 30 V, IE = 0
50
nA
VEB = 10 V, IC = 0
50
nA
100,000
200,000
140,000
1.2
1.5
2.0
V
V
V
1.75
V
7.0
pF
15
pF
ON CHARACTERISTICS
hFE
DC Current Gain*
VCE(sat )
Collector-Emitter Saturation Voltage
VBE( sat)
Base-Emitter Saturation Voltage
I C = 10 mA, VCE = 5.0 V
I C = 100 mA, VCE = 5.0 V
I C = 500 mA, VCE = 5.0 V
I C = 50 mA, IB = 0.5 mA
I C = 500 mA, IB = 0.5 mA
I C = 500 mA, IB = 0.5 mA
VBE( on)
Base-Emitter On Voltage
I C = 50 mA, VCE = 5.0 mA
10,000
20,000
14,000
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
Cibo
Input Capcitance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 10 V, IE = 0,
f = 1.0 MHz
VBE = 1.0 V, IC = 0,
f = 1.0 MHz
2N6427 / MMBT6427
NPN Darlington Transistor
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