Fairchild MMBTH10RG Npn rf transistor Datasheet

MMBTH10RG
MMBTH10RG
NPN RF Transistor
C
• This device is designed for use in low noise UHF/VHF amplifiers, with
collector currents in the 100 µA to 20 mA range in common emitter or
common base mode of operations, and in low frequency drift, high
output UHF oscillators.
• Sourced from process 42.
E
B
SOT-23
Mark: 3E
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Ratings
40
Units
V
VCBO
VEBO
Collector-Base Voltage
40
V
Emitter-Base Voltage
4.0
IC
Collector Current
V
50
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
- Continuous
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Sustaining Voltage *
IC = 1.0 mA, IB = 0
40
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
40
V
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 1.0 µA, IC = 0
4.0
V
ICBO
Collector Cutoff Current
VCB = 30 V, IE = 0
100
nA
On Characteristics
hFE
DC Current Gain
IC = 1.0 mA, VCE = 6.0 V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 5.0 mA
50
120
V
0.2
V
Small Signal Characteristics
fT
Current Gain - Bandwidth Product
IC = 2.0 mA, VCE = 10 V,
f = 100 MHz
450
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.6
pF
rb’Cc
Collector Base Time Constant
IC = 5.0 mA, VCB = 10 V,
f = 79.8 MHz
12
pS
* Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
225
1.8
Units
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
MMBTH10RG
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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Advance Information
Formative or In
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This datasheet contains the design specifications for
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First Production
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©2004 Fairchild Semiconductor Corporation
Rev. I10
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