LESHAN RADIO COMPANY, LTD. VHF Mixer Transistors NPN Silicon MMBTH24LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 30 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V EBO 4.0 Vdc 50 mAdc Collector Current –Continuous IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C RθJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C RθJA TJ , Tstg DEVICE MARKING MMBTH24LT1 = M3A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V (BR)CEO 30 — — Vdc V (BR)CBO 40 — — Vdc V (BR)EBO 4.0 — — Vdc I CBO — — 50 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector–Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter–Base Breakdown Voltage (I E = 10 µAdc , I C = 0) Collector Cutoff Current ( V CB = 15Vdc , I E = 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M34–1/2 LESHAN RADIO COMPANY, LTD. MMBTH24LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 30 — — — fT 400 620 — MHz — 0.25 0.45 pF — — — dB 19 24 — 24 20 — ON CHARACTERISTICS DC Current Gain (I C = 8.0 mAdc, V CE = 10 Vdc) SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product (V CE = 10 Vdc, I C = 8.0mAdc, f = 100MHz) Collector –Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Conversion Gain (213MHz to 45MHz) (V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms) (60MHz to 45MHz) (V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms) C cb — CG 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. M34–2/2