MMBTRC110SS…MMBTRC114SS NPN Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector Features • With built-in bias resistors Base R1 • Simplify circuit design • Reduce a quantity of parts and SOT-23 Plastic Package Emitter manufacturing process Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 1 mA Collector Cutoff Current at VCB = 50 V hFE 120 - - - ICBO - - 100 nA Emitter Cutoff Current at VEB = 5 V IEBO - - 100 nA VCE(sat) - - 0.3 V fT - 250 - MHz R1 - 4.7 10 100 22 47 - KΩ Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA Transition Frequency at VCE = 10 V, IC = 5 mA Input Resistor MMBTRC110SS MMBTRC111SS MMBTRC112SS MMBTRC113SS MMBTRC114SS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 08/12/2006