SEMTECH MMBTRC242S Npn silicon epitaxial planar transistor Datasheet

ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
E
C
B
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
5
V
-IC
3
A
-IC
7
A
-IB
0.6
A
Total Power Dissipation @ TC = 25 OC
PD
10
W
Total Power Dissipation @ TA = 25 C
PD
1.0
W
TJ, Ts
- 65 to + 150
Collector Current - DC
Collector Current - Pulse
1)
Base Current - DC
O
Operating and Storage Junction Temperature Range
1)
C
O
PW=10ms, Duty Cycle ≤ 50%
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
hFE
hFE
30
60
100
160
200
-
120
200
320
400
-
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
30
-
-
V
Collector Base Breakdown Voltage
at -IC = 1 mA
-V(BR)CBO
40
-
-
V
Emitter Base Breakdown Voltage
at -IE = 1 mA
-V(BR)EBO
5
-
-
V
-ICBO
-
-
1
µA
-IEBO
-
-
1
µA
-VCE(sat)
-
-
0.5
V
-VBE(sat)
-
-
2
V
CO
-
55
-
pF
fT
-
80
-
MHz
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 3 V
Collector Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Current Gain Bandwidth Product
at -IC = 100 mA, -VCE = 5 V
R
Q
P
E
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 25/05/2006
Similar pages