MMBTSC3356W NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 20 mA Current Gain Group Collector Cutoff Current at VCB = 10 V Emitter Cutoff Current at VEB = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz 1) Q R S Symbol Min. Typ. Max. Unit hFE hFE hFE 50 80 125 - 100 160 250 - ICBO - - 1 µA IEBO - - 1 µA fT - 7 - GHz - 0.55 1 pF - 11.5 - dB - 1.1 2 dB 1) Cre │S21e│ 2 NF The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/05/2006 MMBTSC3356W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/05/2006