SEMTECH_ELEC MMBTSC3838W

MMBTSC3838W
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
20
V
Collector Emitter Voltage
VCEO
11
V
Emitter Base Voltage
VEBO
3
V
IC
50
mA
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Collector Current
Collector Power Dissipation
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 5 mA
Current Gain Group
Collector Cutoff Current
at VCB = 10 V
Emitter Cutoff Current
at VEB = 2 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 5 mA
Transition Frequency
at VCE = 10 V, IE = 10 mA, f = 500 MHz
Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 6 V, IC = 2 mA , f = 500 MHz, Rg = 50 Ω
R
S
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
56
120
-
160
240
-
ICBO
-
-
0.5
µA
IEBO
-
-
0.5
µA
V(BR)CBO
20
-
-
V
V(BR)CEO
11
-
-
V
V(BR)EBO
3
-
-
V
VCE(sat)
-
-
0.5
V
fT
1.4
3.2
-
GHz
Cob
-
-
1.5
pF
NF
-
3.5
-
dB
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 26/05/2007
MMBTSC3838W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 26/05/2007