MMBTSC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3875 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y hFE 70 - 140 - hFE 120 - 240 - G hFE 200 - 400 - L hFE 300 - 700 - VCE(sat) - - 0.25 V ICBO - - 0.1 µA IEBO - - 0.1 µA fT 80 - - MHz COB - 2 3.5 pF NF - 1 10 dB Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3875 I C-VCE 3K 280 240 COMMON EMITTER Ta=25o C 5.0 6.0 200 3.0 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) h FE -I C 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 0 0 0 1 2 3 4 COMMON EMITTER 1K 500 300 Ta=100o C Ta=25o C Ta=-25 oC 100 50 30 VCE=1V 10 0.3 0.1 6 5 30 3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C/I B =10 1 0.5 0.3 0.1 Ta=100o C Ta=25o C Ta=-25oC 0.01 0.1 0.3 1 3 10 30 100 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) f T-I E I B -VBE 3K 500 300 100 50 30 100 300 COMMON EMITTER VCE=6V 1K 300 T a=1 o 00 C Ta=2 o 5 C Ta=-2 o 5 C COMMON EMITTER VCE=10V Ta=25o C 1K 300 5 3 COLLECTOR CURRENT I C (mA) 3K 100 30 COMMON EMITTER I C/I B =10 Ta=25o C 10 300 BASE CURRENT I B ( A) COLLECTOR-EMITTER SATURATION VCE(sat) (V) 10 VBE(sat) -I C VCE(sat)-I C TRANSITION FREQUENCY f T (MHz) 3 1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 0.05 0.03 VCE=6V 100 30 10 3 1 0.3 10 -0.1 -0.3 -1 -3 -10 EMITTER CURRENT I E (mA) -30 -100 -300 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3875 h PARAMETER-V CE h PARAMETER-I C 5K GR BL h fe Y O 100 h ie xk GR GR BL 30 10 BL Y O 300 Y h oex O 3 1 Y O 0.3 0.3 1 10 50 10 h re x10 -4 0.1 0.5 COLLECTOR CURRENT I C (mA) BL GR Y O 0.3 3 h oex BL O Y GR BL 1 GR 0.1 0.1 GR 30 3 BL h re x10 -4 100 h ie xk h PARAMETER 300 COMMON EMITTER I C=2mA,f=270Hz Ta=25o C BL GR h fe Y O 1K h PARAMETER 1K 5K 3K COMMON EMITTER VCE=12V,f=270Hz Ta=25o C 1 3 10 30 Y O 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) P C-Ta COLLECTOR POWER DISSIPATION P C (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 o AMBIENT TEMPERATURE Ta ( C) SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005