MMBTSC5345 NPN Silicon Epitaxial Planar Transistor for RF amplifier. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 +150 O C C Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE hFE hFE 40 70 120 - 80 140 240 - VCE(sat) - - 0.3 V ICBO - - 0.5 µA IEBO - - 0.5 µA Collector Base Breakdown Voltage at IC=10µA V(BR)CBO 30 Collector Emitter Breakdown Voltage at IC=5mA V(BR)CEO 20 - - V Emitter Base Breakdown Voltage at IE=10µA V(BR)EBO 4 - - V Transition Frequency at VCE=6V, IE=-1mA fT - 550 - MHz Output Capacitance at VCB=6V, f=1MHz COB - 1.4 DC Current Gain at VCE=6V, IC=1mA Current Gain Group Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V R O Y V pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/10/2005 MMBTSC5345 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/10/2005 MMBTSC5345 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 25/10/2005