MMBZ...VDA and C Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual Silicon Planar Zener Diodes with Common Cathode or Common Anode configurations. • Dual package provides for Bidirectional or separate unidirectional configurations. • The dual configurations protect two separate lines with only one device. • Peak Power: 40 W @1 ms (Bidirectional) . • Ideal for ESD Protection. • For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3. Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Terminals: Solderable per MIL-STD-750, method 2026 Packaging Codes/Options: GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box MMBZ15VDC MMBZ27VDC MMBZ15VDA MMBZ27VDA 3 1 3 2 1 Common Cathode 2 Common Anode 18654 Marking: MMBZ15VDC = TC5 MMBZ27VDC = TC7 MMBZ15VDA = TA5 MMBZ27VDA = TA7 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value PPK 404) W Tamb = 25 °C Derate above 25 °C Ptot 225 1.8 mW mW/°C Tamb = 25 °C Derate above 25 °C Ptot 300 2.4 mW mW/°C Peak power dissipation1) Power dissipation on FR-5 Board2) Power dissipation on Alumina Substrate3) 1) Nonrepetitive current pulse per Figure 2 and derate above Tamb = 25 °C per Figure 3. 2) FR-5 = 1.0 x 0.75 x 0.62 in. 3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina. 4) The MMBZ6V8DC/A is rated at 24 V. Unit Thermal Characteristics Tamb = 25 °C, unless otherwise specified Symbol Value Unit Thermal resistance junction to ambiant air Parameter RthJA 556 °C/W Operating and storage temperature range Tj, Tstg - 55 to + 150 °C Document Number 85808 Rev. 1.4, 08-Jul-04 Test condition www.vishay.com 1 MMBZ...VDA and C Series VISHAY Vishay Semiconductors Electrical Characteristics Partnumber Breakdown Voltage1) Test Current Working Peak Reverse Voltage Max. Reverse Leakage Current Max. Reverse Surge Current Max. Reverse Voltage (Clamping Voltage) Max. Temperature Coefficient Max. Forward Voltage VBR at IT IT VRWM IR IPP VC @ IRSM2) at VBR VF @ IF V mA V nA A V mV/°C V mA 200 min max MMBZ15VDA 14.70 15.30 1.0 12.8 100 1.9 21.2 16 0.9 MMBZ27VDA 26.46 27.54 1.0 22.0 80 1.0 38.0 30 1.1 200 MMBZ15VDC 14.30 15.80 1.0 12.8 100 1.9 21.2 16 0.9 200 MMBZ27VDC 25.65 28.35 1.0 22.0 80 1.0 38.0 30 1.1 200 Note: 1) VBR measured at pulse test current IT at an ambient temperature of 25 °C 2) Surge current waveform per Figure 2 and derate per Figure 3 Typical Characteristics (Tamb = 25 °C unless otherwise specified) tr 250 ALUMINA SUBSTRATE 200 Value(%) P tot , POWER DISSIPATION (mW) 300 150 FR-5 BOARD 100 I Half Value - RSM 2 50 50 0 tp 0 18655 25 100 75 50 T, Temperature( °C) 125 150 175 Figure 1. Steady State Power Derating Curve www.vishay.com 2 Peak Value - IRSM 100 Pulse width (tp) is defined as that point where the peak current decays to 50 % of IRSM tr ≤ 10 µs 0 18656 0 1 2 t, Time (ms) 3 4 Figure 2. Pulse Waveform Document Number 85808 Rev. 1.4, 08-Jul-04 MMBZ...VDA and C Series VISHAY Vishay Semiconductors Peak pulse derating in % of peak power or current @ TA = 25Z (°C) 100 75 50 25 0 0 25 18657 75 100 125 50 150 TA - Ambient Temperature (°C) 175 200 Figure 3. Pulse Derating Curve 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85808 Rev. 1.4, 08-Jul-04 www.vishay.com 3 MMBZ...VDA and C Series VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85808 Rev. 1.4, 08-Jul-04