Freescale MMG3008NT1 Heterojunction bipolar transistor(ingap hbt) Datasheet

Freescale Semiconductor
Technical Data
Document Number: MMG3008NT1
Rev. 1, 8/2005
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3008NT1
The MMG3008NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small-signal RF.
0 -6000 MHz, 18.5 dB
15 dBm
InGaP HBT
Features
• Frequency: 0 to 6000 MHz
• P1dB: 15 dBm @ 900 MHz
• Small-Signal Gain: 18.5 dB @ 900 MHz
• Third Order Output Intercept Point: 26 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT -89 Surface Mount Package
• Pb -Free and RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
Characteristic
3
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
Table 2. Maximum Ratings
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
Gp
18.5
16
13
dB
Input Return Loss
(S11)
IRL
-18
-22
-20
dB
Output Return Loss
(S22)
ORL
-20
-18
-16
dB
Power Output @1dB
Compression
P1db
15
14
14
dBm
IP3
26
25.5
25
dBm
Third Order Output
Intercept Point
12
Rating
Symbol
Value
Unit
Supply Voltage (2)
VCC
6
V
(2)
ICC
80
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg
-65 to +150
°C
Junction Temperature (3)
TJ
150
°C
Supply Current
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 38 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (4)
Unit
RθJC
84
°C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3008NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small-Signal Gain (S21)
Characteristic
Gp
17
18.5
—
dB
Input Return Loss (S11)
IRL
—
-18
—
dB
Output Return Loss (S22)
ORL
—
-20
—
dB
Power Output @ 1dB Compression
P1dB
—
15
—
dBm
Third Order Output Intercept Point
IP3
—
26
—
dBm
Noise Figure
NF
—
4
—
dB
Supply Current (1)
ICC
32
38
48
mA
Supply Voltage (1)
VCC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3008NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22-A114)
1A (Minimum)
Machine Model (per EIA/JESD 22-A115)
A (Minimum)
Charge Device Model (per JESD 22-C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG3008NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
TC = 85°C
−10
25°C
20
S11, S22 (dB)
Gp, SMALL−SIGNAL GAIN (dB)
25
-40°C
15
S22
−20
S11
−30
VCC = 5 Vdc
ICC = 38 mA
VCC = 5 Vdc
−40
10
1
0
2
3
0
4
4
3
Figure 2. Small -Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
17
21
19
900 MHz
17
2140 MHz
1960 MHz
15
2600 MHz
13
3500 MHz
11
VCC = 5 Vdc
ICC = 38 mA
9
7
8
9
10
11
12
13
15
14
13
12
VCC = 5 Vdc
ICC = 38 mA
11
0.5
15
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small -Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
80
70
60
50
40
30
20
10
0
4
16
10
14
4.2
4.4
4.6
4.8
5
5.2
5.4
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL−SIGNAL GAIN (dB)
2
f, FREQUENCY (GHz)
23
ICC, COLLECTOR CURRENT (mA)
1
f, FREQUENCY (GHz)
3.5
30
27
24
21
VCC = 5 Vdc
ICC = 38 mA
1 MHz Tone Spacing
18
15
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3008NT1
4
RF Device Data
Freescale Semiconductor
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
33
30
27
24
21
f = 900 MHz
1 MHz Tone Spacing
18
4.95
4.9
5
5.05
5.1
29
28
27
26
25
24
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
23
22
−40
−20
0
60
80
100
Figure 9. Third Order Output Intercept Point
versus Case Temperature
105
−30
−40
MTTF (YEARS)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
40
T, TEMPERATURE (_C)
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
−50
−60
104
VCC = 5 Vdc
ICC = 38 mA
f = 900 MHz
1 MHz Tone Spacing
−70
−80
−6
103
−3
3
0
6
9
120
12
125
130
Pout, OUTPUT POWER (dBm)
6
4
2
VCC = 5 Vdc
ICC = 38 mA
0
1
2
3
140
145
150
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 38 mA
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
8
0
135
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Third Order Intermodulation versus
Output Power
NF, NOISE FIGURE (dB)
20
4
−20
VCC = 5 Vdc, ICC = 38 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
−50
−60
−70
−3
0
3
6
9
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single -Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
12
MMG3008NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-300 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
Z4
Z5
VCC
C1
Z1, Z5
Z2
Z3
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30
S21
20
S21, S11, S22 (dB)
R1
10
C4
C3
0
L1
−10
C2
C1
S22
−20
VCC = 5 Vdc
ICC = 38 mA
−30
S11
MMG30XX
Rev 2
−40
0
100
200
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
0.01 µF Chip Capacitors
0603A103JAT2A
AVX
C4
1000 pF Chip Capacitor
0603A102JAT2A
AVX
L1
470 nH Chip Inductor
BK2125HM471
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3008NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300-3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
Z4
Z5
VCC
C1
Z1, Z5
Z2
Z3
Z3
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30
S21, S11, S22 (dB)
20
VCC = 5 Vdc
ICC = 38 mA
S21
R1
10
C4
C3
L1
0
C2
C1
−10
S11
−20
−30
300
MMG30XX
Rev 2
S22
800
1300
1800
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
06035A151JAT2A
AVX
C3
0.01 µF Chip Capacitor
0603A103JAT2A
AVX
C4
1000 pF Chip Capacitor
0603A102JAT2A
AVX
L1
56 nH Chip Inductor
HK160856NJ-T
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3008NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 38 mA, TC = 255C
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.1
0.03723
-157.139
9.53422
174.957
0.07125
-0.244
0.15383
-9.473
0.15
0.03824
-159.784
9.45692
172.557
0.07151
-0.321
0.15195
-11.4
0.2
0.03924
-161.141
9.38250
169.351
0.07173
-0.527
0.15038
-15.453
0.25
0.03984
-163.743
9.30193
166.775
0.07196
-0.705
0.14855
-20.132
0.3
0.04044
-165.433
9.23472
164.195
0.07227
-0.968
0.14665
-25.238
0.35
0.04154
-167.556
9.16107
161.651
0.07249
-1.121
0.14473
-29.059
0.4
0.04218
-169.996
9.08796
159.059
0.07267
-1.321
0.14297
-33.099
0.45
0.04330
-171.505
9.01503
156.523
0.07303
-1.54
0.14282
-37.115
0.5
0.04391
-173.121
8.93887
153.864
0.07333
-1.729
0.14257
-40.95
0.55
0.04504
-175.107
8.86645
151.441
0.07360
-1.953
0.14246
-45.011
0.6
0.04579
-177.279
8.79137
148.941
0.07384
-2.108
0.14236
-48.838
0.65
0.04639
-179.085
8.72227
146.469
0.07422
-2.436
0.14207
-52.786
0.7
0.04725
178.481
8.65074
144.076
0.07453
-2.667
0.14191
-56.644
0.75
0.04874
176.513
8.57600
141.652
0.07485
-2.877
0.14153
-60.456
0.8
0.05044
174.578
8.49615
139.244
0.07535
-3.216
0.13860
-64.47
0.85
0.05265
172.441
8.41904
136.846
0.07573
-3.535
0.13706
-68.268
0.9
0.05446
170.794
8.33301
134.487
0.07615
-3.858
0.13387
-72.153
0.95
0.05671
168.866
8.24325
132.225
0.07660
-4.215
0.13169
-76.394
1
0.05987
166.015
8.16300
129.928
0.07706
-4.628
0.12795
-80.615
1.05
0.06338
164.827
8.06445
127.713
0.07745
-5.024
0.12512
-84.753
1.1
0.06818
162.719
7.97785
125.419
0.07782
-5.308
0.12243
-89.314
1.15
0.07156
160.419
7.88628
123.146
0.07832
-5.91
0.11969
-94.022
1.2
0.07622
158.869
7.79192
120.927
0.07888
-6.277
0.11711
-98.985
1.25
0.08148
156.417
7.70036
118.767
0.07940
-6.79
0.11465
-104.195
1.3
0.08625
154.855
7.61312
116.644
0.07998
-7.245
0.11217
-109.672
1.35
0.08847
152.545
7.52137
114.548
0.08040
-7.843
0.10841
-114.968
1.4
0.09042
150.239
7.43401
112.485
0.08082
-8.299
0.10615
-120.795
1.45
0.09247
148.043
7.33853
110.413
0.08128
-8.836
0.10380
-126.657
1.5
0.09461
146.969
7.25672
108.381
0.08193
-9.303
0.10158
-128.442
1.55
0.09681
144.023
7.16705
106.399
0.08243
-9.992
0.10048
-133.06
1.6
0.09928
141.737
7.08702
104.396
0.08305
-10.464
0.09950
-138.358
1.65
0.10270
139.246
6.98699
102.42
0.08347
-11.112
0.09874
-142.307
1.7
0.10530
137.14
6.90998
100.459
0.08398
-11.668
0.09873
-147.8
1.75
0.10836
134.919
6.82646
98.556
0.08445
-12.336
0.09872
-152.853
1.8
0.11174
132.496
6.74375
96.678
0.08491
-12.894
0.09935
-157.527
1.85
0.11560
130.26
6.65836
94.774
0.08539
-13.604
0.09998
-162.646
1.9
0.11980
128.189
6.57651
92.937
0.08590
-14.2
0.10150
-167.628
1.95
0.12349
126.377
6.49376
91.045
0.08640
-14.843
0.10335
-172.451
2
0.12873
124.287
6.41028
89.21
0.08693
-15.588
0.10540
-176.909
2.05
0.13268
121.985
6.33373
87.389
0.08742
-16.17
0.10798
178.048
2.1
0.13725
120.2
6.25726
85.623
0.08786
-16.886
0.11081
174.074
2.15
0.14017
118.487
6.18534
83.864
0.08852
-17.695
0.11466
169.543
2.2
0.14638
116.403
6.10210
82.117
0.08869
-18.285
0.11714
166.109
2.25
0.15016
114.638
6.02971
80.32
0.08941
-19.001
0.12062
161.975
2.3
0.15521
112.618
5.95603
78.605
0.08986
-19.642
0.12414
158.434
2.35
0.15976
110.76
5.88332
76.922
0.09022
-20.411
0.12774
155.044
MMG3008NT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 38 mA, TC = 255C (continued)
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.4
0.16414
109.067
5.81205
75.215
0.09063
-21.132
0.13152
151.453
2.45
0.16931
107.269
5.74220
73.556
0.09110
-21.914
0.13622
148.114
2.5
0.17290
105.625
5.67374
71.895
0.09160
-22.568
0.13975
145.204
2.55
0.17697
103.866
5.60911
70.217
0.09197
-23.366
0.14370
142.104
2.6
0.18119
102.097
5.54039
68.601
0.09243
-24.135
0.14796
139.028
2.65
0.18491
100.467
5.48069
66.985
0.09288
-24.891
0.15201
136.155
2.7
0.18871
98.781
5.41580
65.359
0.09335
-25.672
0.15562
133.387
2.75
0.19276
97.217
5.35397
63.725
0.09367
-26.386
0.16040
130.458
2.8
0.19700
95.483
5.29285
62.113
0.09412
-27.158
0.16438
127.735
2.85
0.20042
93.791
5.23322
60.504
0.09452
-28.071
0.16843
124.907
2.9
0.20441
92.231
5.17959
58.977
0.09485
-28.821
0.17329
122.375
2.95
0.20776
90.583
5.11646
57.358
0.09546
-29.704
0.17724
119.612
3
0.21089
89.007
5.06803
55.76
0.09593
-30.551
0.18220
116.735
3.05
0.21615
87.21
5.01467
54.217
0.09605
-31.388
0.18674
114.476
3.1
0.21938
85.618
4.95573
52.66
0.09660
-32.161
0.19068
111.831
3.15
0.22294
84.139
4.90100
51.117
0.09698
-33.041
0.19574
109.296
3.2
0.22712
82.548
4.85380
49.552
0.09728
-33.934
0.20063
106.823
3.25
0.23123
80.985
4.80281
47.99
0.09759
-34.778
0.20541
104.361
3.3
0.23510
79.448
4.75341
46.438
0.09808
-35.752
0.21019
101.936
3.35
0.23920
77.951
4.70392
44.903
0.09840
-36.597
0.21526
99.673
3.4
0.24357
76.439
4.65357
43.375
0.09872
-37.435
0.22065
97.38
3.45
0.24799
75.054
4.60593
41.828
0.09894
-38.395
0.22551
95.15
3.5
0.25252
73.636
4.55940
40.312
0.09929
-39.286
0.23111
92.952
3.55
0.25708
72.232
4.51351
38.767
0.09959
-40.173
0.23653
90.83
3.6
0.26176
70.859
4.46687
37.242
0.09973
-41.064
0.24174
88.712
MMG3008NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
0.64
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3008NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
3
4
4.70
4.40
A
1.87
1.79
0.15 M C A B
0.60
0.40
B
2X R0.15 TYP
1.70
1.40
3
4
2.70
2.40
2X 4° TYP
4.50
3.70
1.30
0.70
5
1
2
2X
3
0.20 M C B
0.48
0.38
0.48
0.38
0.15 M C A B
0.15 M C A B
0.58
0.48
0.46
0.40
0.15 M C A B
2X 4 ° TYP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE
BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD
FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE.
4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES
OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR
BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING
ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE
PLASTIC BODY.
5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
E.P.
2X R0.20
4X
0.10 C
SEATING PLANE
0.65
0.55
1.35
1.25
C
1.50
1.50
1.65
1.55
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. RF OUTPUT
CASE 1514-01
ISSUE C
SOT -89
PLASTIC
BOTTOM VIEW
MMG3008NT1
RF Device Data
Freescale Semiconductor
11
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MMG3008NT1
Document Number: MMG3008NT1
Rev. 1, 8/2005
12
RF Device Data
Freescale Semiconductor