Freescale MMG3009NT1 Heterojunction bipolar transistor (ingap hbt) Datasheet

Freescale Semiconductor
Technical Data
Document Number: MMG3009NT1
Rev. 5, 3/2008
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
MMG3009NT1
The MMG3009NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as Cellular,
P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small - signal RF.
0 - 6000 MHz, 15 dB
18 dBm
InGaP HBT
Features
• Frequency: 0 to 6000 MHz
• P1dB: 18 dBm @ 900 MHz
• Small - Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Typical Performance (1)
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small - Signal Gain
(S21)
Gp
15
14
12.5
dB
IRL
- 13
- 26
- 22
dB
Output Return Loss
(S22)
ORL
- 17
- 15
- 24
dB
Power Output @1dB
Compression
P1db
18
18
17.5
dBm
IP3
34
32
31
dBm
Third Order Output
Intercept Point
3
CASE 1514 - 02, STYLE 1
SOT - 89
PLASTIC
Table 2. Maximum Ratings
Characteristic
Input Return Loss
(S11)
12
Rating
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current
ICC
300
mA
RF Input Power
Pin
10
dBm
Tstg
- 65 to +150
°C
TJ
150
°C
Storage Temperature Range
Junction Temperature
(2)
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 70 mA, TC = 25°C)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value (3)
Unit
RθJC
81
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3009NT1
1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Symbol
Min
Typ
Max
Unit
Small - Signal Gain (S21)
Characteristic
Gp
14.3
15
—
dB
Input Return Loss (S11)
IRL
—
- 13
—
dB
Output Return Loss (S22)
ORL
—
- 17
—
dB
Power Output @ 1dB Compression
P1dB
—
18
—
dBm
Third Order Output Intercept Point
IP3
—
34
—
dBm
Noise Figure
NF
—
4.2
—
dB
Supply Current (1)
ICC
58
70
82
mA
Supply Voltage (1)
VCC
—
5
—
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3009NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Functional Pin Description
Pin
Number
2
Pin Function
1
RFin
2
Ground
3
RFout/DC Supply
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD 22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD 22 - A115)
A (Minimum)
Charge Device Model (per JESD 22 - C101)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
MMG3009NT1
RF Device Data
Freescale Semiconductor
3
50 OHM TYPICAL CHARACTERISTICS
0
TC = 85°C
25°C
−10
S11
15
−40°C
S11, S22 (dB)
Gp, SMALL−SIGNAL GAIN (dB)
20
10
−20
S22
−30
VCC = 5 Vdc
ICC = 70 mA
VCC = 5 Vdc
5
−40
0
1
2
3
0
4
3
4
Figure 2. Small - Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
P1dB, 1 dB COMPRESSION POINT (dBm)
20
19
17
2140 MHz
900 MHz
15
1960 MHz
13
3500 MHz
11
2600 MHz
9
VCC = 5 Vdc
ICC = 70 mA
7
19
18
17
16
15
VCC = 5 Vdc
ICC = 70 mA
14
13
10
12
14
16
18
1
1.5
2
2.5
3
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (GHz)
Figure 4. Small - Signal Gain versus Output
Power
Figure 5. P1dB versus Frequency
100
80
60
40
20
0
4
0.5
20
4.2
4.4
4.6
4.8
5
5.2
5.4
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Gp, SMALL−SIGNAL GAIN (dB)
2
f, FREQUENCY (GHz)
21
ICC, COLLECTOR CURRENT (mA)
1
f, FREQUENCY (GHz)
3.5
36
33
30
27
VCC = 5 Vdc
ICC = 70 mA
1 MHz Tone Spacing
24
21
0
1
2
3
VCC, COLLECTOR VOLTAGE (V)
f, FREQUENCY (GHz)
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
4
MMG3009NT1
4
RF Device Data
Freescale Semiconductor
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
50 OHM TYPICAL CHARACTERISTICS
36
33
30
27
24
f = 900 MHz
1 MHz Tone Spacing
21
4.95
4.9
5
5.05
5.1
VCC, COLLECTOR VOLTAGE (V)
35
34
33
32
31
30
VCC = 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
29
28
−40
−20
40
60
80
100
T, TEMPERATURE (_C)
105
−30
−40
MTTF (YEARS)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
Figure 9. Third Order Output Intercept Point
versus Case Temperature
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
−50
−60
104
VCC = 5 Vdc
ICC = 70 mA
f = 900 MHz
1 MHz Tone Spacing
−70
103
−80
0
3
9
6
120
15
12
125
Pout, OUTPUT POWER (dBm)
6
4
2
VCC = 5 Vdc
ICC = 70 mA
0
1
2
3
135
140
145
150
NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 70 mA
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
8
0
130
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Third Order Intermodulation versus
Output Power
NF, NOISE FIGURE (dB)
0
4
−20
VCC = 5 Vdc, ICC = 70 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−40
−50
−60
−70
2
4
6
8
10
12
14
f, FREQUENCY (GHz)
Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
16
MMG3009NT1
RF Device Data
Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40- 300 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z3
Z4
Z5
VCC
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
20
S21
S21, S11, S22 (dB)
10
R1
0
C4
C3
L1
−10
C2
C1
S22
−20
−30
VCC = 5 Vdc
ICC = 70 mA
−40
0
100
S11
200
MMG30XX
Rev 2
300
400
500
f, FREQUENCY (MHz)
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
0.01 μF Chip Capacitors
C0603C103J5RAC
Kemet
C4
1000 pF Chip Capacitor
C0603C102J5RAC
Kemet
L1
470 nH Chip Inductor
BK2125HM471 - T
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3009NT1
6
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz
VSUPPLY
R1
C3
C4
L1
RF
INPUT
Z1
DUT
Z2
C1
Z1, Z5
Z2
Z3
Z3
Z4
Z5
VCC
0.347″ x 0.058″ Microstrip
0.575″ x 0.058″ Microstrip
0.172″ x 0.058″ Microstrip
RF
OUTPUT
C2
Z4
PCB
0.403″ x 0.058″ Microstrip
Getek Grade ML200C, 0.031″, εr = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30
S21, S11, S22 (dB)
20
R1
S21
10
C4
C3
L1
0
C2
C1
−10
−20
S22
VCC = 5 Vdc
ICC = 70 mA
−30
300
800
S11
1300
1800
MMG30XX
Rev 2
2300
2800
3300
3800
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
150 pF Chip Capacitors
C0603C151J5RAC
Kemet
C3
0.01 μF Chip Capacitor
C0603C103J5RAC
Kemet
C4
1000 pF Chip Capacitor
C0603C102J5RAC
Kemet
L1
56 nH Chip Inductor
HK160856NJ - T
Taiyo Yuden
R1
0 W Chip Resistor
ERJ3GEY0R00V
Panasonic
MMG3009NT1
RF Device Data
Freescale Semiconductor
7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 70 mA, TC = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
100
0.19606
- 174.964
6.33492
175.897
0.10115
- 0.614
0.07282
176.529
150
0.19734
- 176.357
6.30368
173.26
0.10204
- 1.587
0.07571
178.062
200
0.19944
169.849
6.27983
171.036
0.10220
- 2.173
0.07648
- 178.213
250
0.20027
168.421
6.24623
169.018
0.10243
- 2.498
0.08038
- 175.337
300
0.19924
166.435
6.22884
166.867
0.10334
- 2.998
0.07928
- 172.371
350
0.19543
164.497
6.22675
164.532
0.10364
- 3.636
0.07836
- 172.028
400
0.19419
162.266
6.21021
162.42
0.10357
- 4.18
0.07876
- 169.383
450
0.19172
160.135
6.19495
160.278
0.10351
- 4.669
0.07882
- 167.245
500
0.18914
158.072
6.18191
158.065
0.10361
- 5.256
0.07903
- 165.903
550
0.18788
156.056
6.16313
155.935
0.10378
- 5.746
0.07946
- 164.125
600
0.18596
154.01
6.14591
153.778
0.10379
- 6.277
0.08061
- 162.978
650
0.18399
152.064
6.12734
151.629
0.10396
- 6.756
0.08181
- 162.118
700
0.18285
150.008
6.10486
149.511
0.10408
- 7.313
0.08346
- 161.229
750
0.18159
148.088
6.08449
147.384
0.10411
- 7.817
0.08496
- 160.812
800
0.18056
146.09
6.06038
145.27
0.10427
- 8.376
0.08717
- 160.896
850
0.17973
144.286
6.03306
143.153
0.10440
- 8.885
0.08917
- 161.031
900
0.17932
142.485
6.00923
141.039
0.10453
- 9.38
0.09202
- 161.574
950
0.17920
140.759
5.98147
138.952
0.10467
- 9.995
0.09484
- 162.293
1000
0.17847
139.226
5.95646
136.927
0.10485
- 10.462
0.09809
- 163.293
1050
0.17754
137.531
5.92809
134.838
0.10508
- 11.017
0.10057
- 164.366
1100
0.17453
136.047
5.89423
132.763
0.10519
- 11.541
0.10471
- 165.489
- 167.229
1150
0.17205
134.871
5.86296
130.716
0.10534
- 12.012
0.10843
1200
0.17066
133.54
5.83017
128.685
0.10542
- 12.612
0.11227
- 168.9
1250
0.16951
132.305
5.79633
126.662
0.10564
- 13.155
0.11601
- 170.51
1300
0.16662
131.182
5.76557
124.647
0.10580
- 13.654
0.12012
- 172.32
1350
0.16577
130.038
5.73189
122.631
0.10602
- 14.194
0.12430
- 174.175
1400
0.16504
128.988
5.69605
120.653
0.10620
- 14.728
0.12842
- 176.041
1450
0.16426
128.206
5.65985
118.678
0.10641
- 15.283
0.13238
- 178.197
1500
0.16609
122.177
5.63288
116.712
0.10680
- 15.856
0.13929
- 178.349
1550
0.16661
120.535
5.60045
114.805
0.10706
- 16.422
0.14264
179.292
1600
0.16797
118.895
5.56701
112.889
0.10732
- 16.914
0.14623
176.482
1650
0.17042
117.389
5.53367
110.947
0.10761
- 17.529
0.14778
174.032
1700
0.17177
116.114
5.50453
109.079
0.10790
- 18.111
0.15034
171.358
1750
0.17361
114.897
5.47270
107.137
0.10818
- 18.625
0.15223
168.855
1800
0.17663
113.75
5.43993
105.194
0.10841
- 19.165
0.15382
166.27
1850
0.17969
112.634
5.40358
103.282
0.10863
- 19.761
0.15575
163.924
1900
0.18333
111.562
5.36970
101.431
0.10919
- 20.39
0.15708
161.656
1950
0.18634
110.534
5.33711
99.484
0.10950
- 21.017
0.15722
159.517
2000
0.18991
109.707
5.30347
97.624
0.10980
- 21.621
0.15781
157.67
2050
0.19272
108.497
5.26942
95.722
0.11012
- 22.222
0.15859
156.162
2100
0.19593
107.602
5.23491
93.803
0.11037
- 22.899
0.15951
154.73
2150
0.19925
106.721
5.19782
91.865
0.11076
- 23.629
0.16086
153.761
2200
0.20272
105.922
5.15894
89.97
0.11107
- 24.273
0.16242
152.923
2250
0.20521
104.933
5.11750
88.119
0.11132
- 24.939
0.16412
151.958
(continued)
MMG3009NT1
8
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 70 mA, TC = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2300
0.20819
103.761
5.07836
86.232
0.11160
- 25.64
0.16622
151.355
2350
0.21027
102.506
5.03981
84.384
0.11177
- 26.346
0.16892
150.63
2400
0.21179
101.509
4.99976
82.526
0.11206
- 26.995
0.17307
150.179
2450
0.21372
100.321
4.95674
80.649
0.11219
- 27.627
0.17696
149.454
2500
0.21503
99.084
4.91517
78.813
0.11247
- 28.368
0.18136
148.699
2550
0.21607
98.079
4.87557
77.083
0.11260
- 29.056
0.18649
147.675
2600
0.21693
96.937
4.83415
75.317
0.11290
- 29.737
0.19209
146.671
2650
0.21764
95.679
4.79330
73.409
0.11315
- 30.261
0.19800
145.149
2700
0.21800
94.585
4.75322
71.62
0.11317
- 31.061
0.20392
144.12
2750
0.21817
93.428
4.71387
69.917
0.11349
- 31.733
0.20970
142.804
2800
0.21833
92.207
4.67702
68.159
0.11366
- 32.454
0.21628
141.065
2850
0.21805
91.061
4.63817
66.317
0.11402
- 33.132
0.22172
139.329
2900
0.21865
89.888
4.60218
64.555
0.11435
- 33.832
0.22856
137.508
2950
0.21925
88.748
4.56625
62.873
0.11463
- 34.552
0.23450
135.667
3000
0.21915
87.532
4.53210
61.144
0.11512
- 35.281
0.24044
133.457
3050
0.22110
86.342
4.50064
59.382
0.11540
- 36.033
0.24561
131.639
3100
0.22166
85.246
4.46608
57.613
0.11582
- 36.792
0.25129
129.229
3150
0.22283
84.227
4.43647
55.954
0.11604
- 37.437
0.25625
127.153
3200
0.22458
83.152
4.40552
54.104
0.11651
- 38.235
0.26146
124.84
3250
0.22637
82.137
4.37427
52.337
0.11696
- 38.955
0.26652
122.578
3300
0.22771
81.039
4.34455
50.582
0.11740
- 39.776
0.27125
120.071
3350
0.23010
79.979
4.31085
48.824
0.11778
- 40.645
0.27548
118.04
3400
0.23244
78.98
4.28183
47.09
0.11825
- 41.441
0.28049
115.642
3450
0.23531
78.054
4.25137
45.379
0.11856
- 42.323
0.28504
113.247
3500
0.23838
77.028
4.22125
43.528
0.11892
- 43.156
0.28907
111.227
3550
0.24191
76.08
4.19033
41.795
0.11931
- 43.953
0.29393
108.97
3600
0.24470
75.139
4.15822
40.059
0.11966
- 44.868
0.29797
106.843
MMG3009NT1
RF Device Data
Freescale Semiconductor
9
1.7
7.62
0.305 diameter
2.49
3.48
5.33
2.54
1.27
1.27
0.58
0.86
0.64
3.86
Recommended Solder Stencil
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 20. Recommended Mounting Configuration
MMG3009NT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MMG3009NT1
RF Device Data
Freescale Semiconductor
11
MMG3009NT1
12
RF Device Data
Freescale Semiconductor
MMG3009NT1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3100: General Purpose Amplifier Biasing
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
3
Mar. 2007
•
Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS
compliant part numbers, p. 6, 7
4
July 2007
•
Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing
dimension for Pin 1 and Pin 3.
5
Mar. 2008
• Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,
p. 1
•
Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis
(ACPR) unit of measure to dBc, p. 5
• Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected
frequency values from GHz to MHz, p. 8, 9
MMG3009NT1
14
RF Device Data
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MMG3009NT1
Document
Number:
RF
Device
Data MMG3009NT1
Rev. 5, 3/2008
Freescale
Semiconductor
15