ON MMSD103T1G High voltage switching diode Datasheet

MMSD103T1
Preferred Device
High Voltage Switching
Diode
Features
• Pb−Free Package is Available
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
250
Vdc
Peak Forward Current
IF
200
mAdc
IFM(surge)
625
mAdc
Characteristic
Symbol
Value
Unit
Forward Power Dissipation, FR−5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
PF
400
3.2
mW
mW/°C
Peak Forward Surge Current
1
Cathode
2
Anode
2
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJL
174
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
492
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage
Temperature Range
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
1
JS M G
G
JS = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping †
MMSD103T1
SOD−123
3000 / Tape & Reel
MMSD103T1G
SOD−123
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 3
1
Publication Order Number:
MMSD103T1/D
MMSD103T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
−
−
1.0
100
250
−
−
−
1000
1250
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
mAdc
IR
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
−
50
ns
820 W
+10 V
2.0 k
IF
100 mH
tr
0.1 mF
tp
IF
t
trr
10%
t
0.1 mF
90%
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
50 W OUTPUT
PULSE
GENERATOR
VR
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
3500
2500
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
3000
TA = −55°C
2000
1500
TA = 25°C
1000
TA = 150°C
500
0
0.1
0.2
0.5
1
2
5
10
20
50
100
200
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
TA = 150°C
TA = 25°C
TA = −55°C
1
FORWARD CURRENT (mA)
2
5
10
20
50
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
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2
100
200 300
MMSD103T1
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
D
ÂÂÂÂ
ÂÂÂÂ
ÂÂÂÂ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
A1
1
HE
DIM
A
A1
b
c
D
E
HE
L
E
MIN
0.037
0.000
0.020
−−−
0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
−−−
0.063
0.106
0.145
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
STYLE 1:
PIN 1. CATHODE
2. ANODE
L
2
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
−−−
−−−
0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
−−−
−−−
0.25
C
b
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MMSD103T1/D
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