Diodes MMSTA64-7 Pnp surface mount small signal transistor Datasheet

MMSTA63/MMSTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMSTA13/MMSTA14)
Ultra-Small Surface Mount Package
Ideal for Medium Power Amplification and
Switching
High Current Gain
SOT-323
A
Dim
Min
Max
C
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
B C
B
E
G
H
Mechanical Data
·
·
·
·
·
·
·
·
·
K
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMSTA63 Marking K2E, K3E (See Page 2)
MMSTA64 Marking K3E (see Page 2)
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Maximum Ratings
M
J
D
E
L
C
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0°
8°
All Dimensions in mm
B
E
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
MMSTA63
MMSTA64
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-10
V
IC
-500
mA
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Note:
Pd
200
mW
RqJA
625
K/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30159 Rev. 3 - 2
1 of 2
www.diodes.com
MMSTA63/MMSTA64
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
¾
V
IC = -100mA VBE = 0V
OFF CHARACTERISTICS (Note 2)
V(BR)CEO
-30
Collector Cutoff Current
ICBO
¾
-100
nA
VCB = -30V, IE = 0
Emitter Cutoff Current
IEBO
¾
-100
nA
VEB = -10V, IC = 0
hFE
5,000
10,000
10,000
20,000
¾
¾
IC = -10mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-1.5
V
IC = -100mA, IB = -100mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
-2.0
V
IC = -100mA, VCE = -5.0V
fT
125
¾
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Emitter Breakdown Voltage
ON CHARACTERISTICS (Note 2)
DC Current Gain
MMSTA63
MMSTA64
MMSTA63
MMSTA64
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Ordering Information
Notes:
(Note 3)
Device
Packaging
Shipping
MMSTA63-7
SOT-323
3000/Tape & Reel
MMSTA647
SOT-323
3000/Tape & Reel
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
KxE = Product Type Marking Code, e.g. K2E = MMSTA63
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KxE
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30159 Rev. 3 - 2
2 of 2
www.diodes.com
MMSTA63/MMSTA64
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