MMUN2211 THRU MMUN 2241 SOT-23 Plastic-Encapsulate Bias Resistor Transistor NP N Silicon SOT- 23 Markingand Resistor Values Device Marking R1(k) R2(k) MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241 A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A8M A8R A8U 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 Collector (Output) Base (Input) R1 R2 Emitter (Common) ∞ ∞ Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc IC 100 mAdc Value Unit Collector Current-Continuous Thermal Characteristics Characteristics Symbol Total Device Dissipation FR-5 Board (1) TA = 25℃ Derate above 25℃ Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature PD 246 1.6 mW mW / ℃ R θJA 625 ℃/W TJ,Tstg -65 to +150 ℃ 1. FR-4 @ minimun pad High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Characteristic Symbol Min Typ Max Unit ICBO ICEO - - 100 nAdc - - 500 nAdc - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 50 - - Vdc 50 - - Vdc 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 - - - 0.25 - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS Collector-Base Cutof f Current (V CB= 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE= 50 V, I B = 0) Emitter-Base Cutof f Current (VEB= 6.0 V, I C = 0) MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241 IEBO Collector-Base Breakdown Voltage (I C = 10 mA, I E = 0) V (BR)CBO Collector-Emitter Breakdown Voltage (Note 2.) (IC = 2.0 mA, I B = 0) V (BR)CEO mAdc ON CHARACTERISTICS (Note 2.) DC Current Gain (VCE= 10 V, I C = 5.0 mA) MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (I C = 10 mA, I B = 5 mA) MMUN2230/MMUN2231 (I C = 10 mA, I B = 1 mA) MMUN2215/MMUN2216/MMUN2232 hFE VCE(sat) Vdc MMUN2233/MMUN2234/MMUN2235/MMUN2238 Output Voltage (on) (VCC= 5.0 V, VB = 2.5 V, R L= 1.0 kW ) (VCC= 5.0 V, V B = 3.5 V, R L = 1.0 k W) (VCC= 5.0 V, VB = 5.0 V, R L = 1.0 k W) MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241 VOL Vdc 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %. High Diode Semiconductor 2 Electrical Characteristics (TA=25℃ unless otherwise noted) Characteristic ON CHARACTERISTICS (Note 2) (Continued) Output Voltage (off) (VCC = 5.0 V,V B = 0.5 V ,R L = 1.0 k W) MMUN2230 (V CC= 5.0 V, VB = 0.050 V, R L = 1.0 k W ) MMUN2215 (VCC= 5.0 V, V B = 0.25 V, R L = 1.0 k W) MMUN2216 MMUN2233 MMUN2238 Symbol Min Typ Max Unit VOH 4.9 - - Vdc R1 Input Resistor MMUN2211 MMUN2212 MMUN2213 MMUN2214 MMUN2215 MMUN2216 MMUN2230 MMUN2231 MMUN2232 MMUN2233 MMUN2234 MMUN2235 MMUN2238 MMUN2241 Resistor Ratio MMUN2211/MMUN2212/MMUN2213 MMUN2214 MMUN2215/MMUN2216/MMUN2238 MMUN2241 MMUN2230/MMUN2231/MMUN2232 MMUN2233 MMUN2234 MMUN2235 R 1/R 2 kW 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 2.86 100 0.8 0.17 0.8 0.055 0.38 0.038 1.0 0.21 1.0 0.1 0.47 0.047 1.2 0.25 1.2 0.185 0.56 0.056 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% High Diode Semiconductor 3 Typical Characteristics 250 200 V CE(sat), MAXIMUM COLLECTOR VOLT AGE (VOLTS) PD, POWER DISSIP ATION (MILLIW ATTS) MMUN2211 1 IC /I B = 10 TA = -25 ℃ 25 ℃ 75 ℃ 0.1 150 100 0.01 R qJA= 625 ℃/W 50 0 -50 0 50 100 150 0.001 0 TA , AMBIENT TEMPERATURE (5℃ ) 20 40 60 80 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. I C Figure 1. Derating Curve 4 1000 V CE = 10 V TA = 75 ℃ Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) MMUN2212 25 ℃ -25℃ 100 10 1 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 A TA = 25 ℃ 0 Figure 3. DC Current Gain 10 V O = 0.2 V TA = -25 ℃ 1 0.1 0.01 VO = 5 V 0.001 0 1 2 3 30 50 40 10 25 ℃ 75 ℃ 20 Figure 4. Output Capcitance V in, INPUT VOLTAGE (VOL TS) IC, COLLECTOR CURRENT (mA) 100 10 V R , REVERSE BIAS VOL TAGE (VOL TS) 4 5 6 7 8 9 V in, INPUT VOLTAGE (VOL TS) Figure 5. Output Current vs. Input Voltage 10 TA = -25 ℃ 25 ℃ 75 ℃ 1 0.1 0 40 10 20 30 IC , COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage vs. Output Current High Diode Semiconductor 4 Typical Characteristics 1000 1 TA = -25℃ IC/IB = 10 25 ℃ 75 ℃ 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) MMUN2211 V CE = 10 V TA = 75 ℃ 100 10 -25 ℃ 25℃ 10 IC, COLLECTOR CURRENT (mA ) 1 100 Figure 8. DC Current Gain Figure 7. VCE(sat) vs. I C MMUN2212 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 A TA = 25 ℃ 3 2 1 0 0 10 20 30 40 50 75 ℃ 25 ℃ TA = -25℃ 10 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 8 10 V in, INPUT VOLTAGE (VOL TS) V R , REVERSE BIAS VOL TAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 V in, INPUT VOLTAGE (VOL TS) Cob, CAPACITANCE (pF) 4 V O = 0.2 V TA = -25℃ 10 75 ℃ 25 ℃ 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 1 1. Input V oltage vs. Output Current High Diode Semiconductor 5 Typical Characteristics 10 IC/IB = 10 1000 TA = -25 ℃ 25 ℃ 75 ℃ 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) MMUN2213 V CE = 10 V TA = 75 ℃ 25℃ -25℃ 100 10 1 IC, COLLECTOR CURRENT (mA) Figure 12. V CE(sat) vs. I C Figure 13. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25 ℃ 0.6 0.4 0.2 0 0 10 20 30 40 50 ℃ 755C 75 ℃ 255C 25 10 ℃ TA = -25 ±255C 1 0.1 0.01 0.001 VO = 5 V V R , REVERSE BIAS VOL TAGE (VOL TS) 4 6 8 V in, INPUT VOLTAGE (VOL TS) Figure 14. Output Capacitance Figure 15. Output Current vs. Input Voltage 0 2 10 100 V in, INPUT VOLTAGE (VOL TS) Cob, CAPACITANCE (pF) 1 0.8 100 10 IC, COLLECTOR CURRENT (mA) V O = 0.2 V TA = -25 ℃ 25 ℃ 75℃ 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage vs. Output Current High Diode Semiconductor 6 Typical Characteristics 1 IC/IB = 10 TA = -25℃ 25 ℃ 0.1 75 ℃ 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) MMUN2214 300 VCE = 10 25 ℃ 200 -25℃ 150 100 50 0 1 Figure 17. V CE(sat) vs. IC 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz lE = 0 A TA = 25 ℃ 3 2.5 2 1.5 1 0.5 2 4 6 8 10 15 20 25 30 35 40 45 50 V R , REVERSE BIAS VOL TAGE (VOLTS) Figure 19. Output Capacitance 10 V O = 0.2 V V in, INPUT VOLTAGE (VOL TS) 0 IC, COLLECTOR CURRENT (mA) 100 3.5 Cob, CAPACITANCE (pF) 2 Figure 18. DC Current Gain 4 0 TA = 75 ℃ 250 75 ℃ 25 ℃ TA = -25℃ 10 VO = 5 V 1 0 2 4 6 8 V in, INPUT VOLTAGE (VOL TS) 10 Figure 20. Output Current vs. Input V oltage TA = -25℃ 25 ℃ 75 ℃ 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage vs. Output Current High Diode Semiconductor 7 Typical Characteristics MMUN2232 1000 IC/IB =10 hFE, DC CURRENT GAIN V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOL TS) 1 TA = 75 ℃ 0.1 25 ℃ -25 ℃ 0.01 0.001 4 12 8 2 16 0 24 TA = 75℃ 100 25 0 50 75 100 IC , COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (mA) Figure 22. V CE(sat) vs. I C Figure 23. DC Current Gain 100 5 4 3 2 1 0 10 20 30 40 50 60 125 VO = 5 V 75 ℃ IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 A TA = 25℃ 25 ℃ 10 1 TA = -25 ℃ 0.1 0.01 0 V R, REVERSE BIAS VOL TAGE (VOL TS) 2 4 6 8 V in, INPUT VOLTAGE (VOL TS) Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage 10 V in, INPUT VOLTAGE (VOL TS) Cob, CAPACITANCE (pF) 25 ℃ -25 ℃ 10 1 28 6 0 V CE = 10 V V O = 0.2 V TA = -25 ℃ 75 ℃ 1 25℃ 0.1 0 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Output Voltage vs. Input Current High Diode Semiconductor 8 Typical Characteristics MMUN2233 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOL TS) 1 25 ℃ 0.001 25 ℃ 100 75 ℃ TA = -25 ℃ 0.01 75 ℃ TA = -25℃ 10 V CE = 10 V 2 7 12 2 17 2 IC, COLLECTOR CURRENT (mA) Figure 27. V CE(sat) vs. I C 27 32 1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 28. DC Current Gain High Diode Semiconductor 9 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 10 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 11