HDSEMI MMUN2235 Sot-23 plastic-encapsulate bias resistor transistor Datasheet

MMUN2211 THRU MMUN 2241
SOT-23 Plastic-Encapsulate Bias Resistor Transistor
NP N Silicon
SOT- 23
Markingand Resistor Values
Device
Marking
R1(k)
R2(k)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
A8M
A8R
A8U
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
Collector
(Output)
Base
(Input)
R1
R2
Emitter
(Common)
∞
∞
Maximum Ratings
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
IC
100
mAdc
Value
Unit
Collector Current-Continuous
Thermal Characteristics
Characteristics
Symbol
Total Device Dissipation FR-5 Board (1)
TA = 25℃
Derate above 25℃
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature
PD
246
1.6
mW
mW / ℃
R θJA
625
℃/W
TJ,Tstg
-65 to +150
℃
1. FR-4 @ minimun pad
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ICBO
ICEO
-
-
100
nAdc
-
-
500
nAdc
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
50
-
-
Vdc
50
-
-
Vdc
35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
-
-
-
0.25
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
OFF CHARACTERISTICS
Collector-Base Cutof f Current (V CB= 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE= 50 V, I B = 0)
Emitter-Base Cutof f Current
(VEB= 6.0 V, I C = 0)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
IEBO
Collector-Base Breakdown Voltage (I C = 10 mA, I E = 0)
V (BR)CBO
Collector-Emitter Breakdown Voltage (Note 2.)
(IC = 2.0 mA, I B = 0)
V (BR)CEO
mAdc
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(VCE= 10 V, I C = 5.0 mA)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(I C = 10 mA, I B = 5 mA) MMUN2230/MMUN2231
(I C = 10 mA, I B = 1 mA) MMUN2215/MMUN2216/MMUN2232
hFE
VCE(sat)
Vdc
MMUN2233/MMUN2234/MMUN2235/MMUN2238
Output Voltage (on)
(VCC= 5.0 V, VB = 2.5 V, R L= 1.0 kW )
(VCC= 5.0 V, V B = 3.5 V, R L = 1.0 k W)
(VCC= 5.0 V, VB = 5.0 V, R L = 1.0 k W)
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
VOL
Vdc
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
High Diode Semiconductor
2
Electrical Characteristics (TA=25℃ unless otherwise noted)
Characteristic
ON CHARACTERISTICS (Note 2) (Continued)
Output Voltage (off) (VCC = 5.0 V,V B = 0.5 V ,R L = 1.0 k W)
MMUN2230
(V CC= 5.0 V, VB = 0.050 V, R L = 1.0 k W )
MMUN2215
(VCC= 5.0 V, V B = 0.25 V, R L = 1.0 k W)
MMUN2216
MMUN2233
MMUN2238
Symbol
Min
Typ
Max
Unit
VOH
4.9
-
-
Vdc
R1
Input Resistor
MMUN2211
MMUN2212
MMUN2213
MMUN2214
MMUN2215
MMUN2216
MMUN2230
MMUN2231
MMUN2232
MMUN2233
MMUN2234
MMUN2235
MMUN2238
MMUN2241
Resistor Ratio
MMUN2211/MMUN2212/MMUN2213
MMUN2214
MMUN2215/MMUN2216/MMUN2238
MMUN2241
MMUN2230/MMUN2231/MMUN2232
MMUN2233
MMUN2234
MMUN2235
R 1/R 2
kW
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.86
100
0.8
0.17
0.8
0.055
0.38
0.038
1.0
0.21
1.0
0.1
0.47
0.047
1.2
0.25
1.2
0.185
0.56
0.056
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
High Diode Semiconductor
3
Typical Characteristics
250
200
V CE(sat), MAXIMUM COLLECTOR VOLT AGE
(VOLTS)
PD, POWER DISSIP ATION (MILLIW ATTS)
MMUN2211
1
IC /I B = 10
TA = -25 ℃
25 ℃
75 ℃
0.1
150
100
0.01
R qJA= 625 ℃/W
50
0
-50
0
50
100
150
0.001
0
TA , AMBIENT TEMPERATURE (5℃ )
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. I C
Figure 1. Derating Curve
4
1000
V CE = 10 V
TA = 75 ℃
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
MMUN2212
25 ℃
-25℃
100
10
1
10
IC, COLLECTOR CURRENT (mA)
3
2
1
0
100
f = 1 MHz
lE = 0 A
TA = 25 ℃
0
Figure 3. DC Current Gain
10
V O = 0.2 V
TA = -25 ℃
1
0.1
0.01
VO = 5 V
0.001
0
1
2
3
30
50
40
10
25 ℃
75 ℃
20
Figure 4. Output Capcitance
V in, INPUT VOLTAGE (VOL TS)
IC, COLLECTOR CURRENT (mA)
100
10
V R , REVERSE BIAS VOL TAGE (VOL TS)
4
5
6
7
8
9
V in, INPUT VOLTAGE (VOL TS)
Figure 5. Output Current vs. Input Voltage
10
TA = -25 ℃
25 ℃
75 ℃
1
0.1
0
40
10
20
30
IC , COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
High Diode Semiconductor
4
Typical Characteristics
1000
1
TA = -25℃
IC/IB = 10
25 ℃
75 ℃
0.1
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
V CE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
MMUN2211
V CE = 10 V
TA = 75 ℃
100
10
-25 ℃
25℃
10
IC, COLLECTOR CURRENT (mA )
1
100
Figure 8. DC Current Gain
Figure 7. VCE(sat) vs. I C
MMUN2212
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 A
TA = 25 ℃
3
2
1
0
0
10
20
30
40
50
75 ℃
25 ℃
TA = -25℃
10
1
0.1
0.01
0.001
VO = 5 V
0
2
4
6
8
10
V in, INPUT VOLTAGE (VOL TS)
V R , REVERSE BIAS VOL TAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V in, INPUT VOLTAGE (VOL TS)
Cob, CAPACITANCE (pF)
4
V O = 0.2 V
TA = -25℃
10
75 ℃
25 ℃
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 1 1. Input V oltage vs. Output Current
High Diode Semiconductor
5
Typical Characteristics
10
IC/IB = 10
1000
TA = -25 ℃
25 ℃
75 ℃
1
0.1
0.01
0
20
40
60
80
hFE, DC CURRENT GAIN (NORMALIZED)
V CE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
MMUN2213
V CE = 10 V
TA = 75 ℃
25℃
-25℃
100
10
1
IC, COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) vs. I C
Figure 13. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25 ℃
0.6
0.4
0.2
0
0
10
20
30
40
50
℃
755C
75
℃
255C
25
10
℃
TA = -25
±255C
1
0.1
0.01
0.001
VO = 5 V
V R , REVERSE BIAS VOL TAGE (VOL TS)
4
6
8
V in, INPUT VOLTAGE (VOL TS)
Figure 14. Output Capacitance
Figure 15. Output Current vs. Input Voltage
0
2
10
100
V in, INPUT VOLTAGE (VOL TS)
Cob, CAPACITANCE (pF)
1
0.8
100
10
IC, COLLECTOR CURRENT (mA)
V O = 0.2 V
TA = -25 ℃
25 ℃
75℃
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage vs. Output Current
High Diode Semiconductor
6
Typical Characteristics
1
IC/IB = 10
TA = -25℃
25 ℃
0.1
75 ℃
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
V CE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
MMUN2214
300
VCE = 10
25 ℃
200
-25℃
150
100
50
0
1
Figure 17. V CE(sat) vs. IC
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
lE = 0 A
TA = 25 ℃
3
2.5
2
1.5
1
0.5
2
4 6 8 10 15 20 25 30 35 40 45 50
V R , REVERSE BIAS VOL TAGE (VOLTS)
Figure 19. Output Capacitance
10
V O = 0.2 V
V in, INPUT VOLTAGE (VOL TS)
0
IC, COLLECTOR CURRENT (mA)
100
3.5
Cob, CAPACITANCE (pF)
2
Figure 18. DC Current Gain
4
0
TA = 75 ℃
250
75 ℃
25 ℃
TA = -25℃
10
VO = 5 V
1
0
2
4
6
8
V in, INPUT VOLTAGE (VOL TS)
10
Figure 20. Output Current vs. Input V oltage
TA = -25℃
25 ℃
75 ℃
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage vs. Output Current
High Diode Semiconductor
7
Typical Characteristics
MMUN2232
1000
IC/IB =10
hFE, DC CURRENT GAIN
V CE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOL TS)
1
TA = 75 ℃
0.1
25 ℃
-25 ℃
0.01
0.001
4
12
8
2
16
0
24
TA = 75℃
100
25
0
50
75
100
IC , COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 22. V CE(sat) vs. I C
Figure 23. DC Current Gain
100
5
4
3
2
1
0
10
20
30
40
50
60
125
VO = 5 V
75 ℃
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 A
TA = 25℃
25 ℃
10
1
TA = -25 ℃
0.1
0.01
0
V R, REVERSE BIAS VOL TAGE (VOL TS)
2
4
6
8
V in, INPUT VOLTAGE (VOL TS)
Figure 24. Output Capacitance
Figure 25. Output Current vs. Input Voltage
10
V in, INPUT VOLTAGE (VOL TS)
Cob, CAPACITANCE (pF)
25 ℃
-25 ℃
10
1
28
6
0
V CE = 10 V
V O = 0.2 V
TA = -25 ℃
75 ℃
1
25℃
0.1
0
10
20
IC, COLLECTOR CURRENT (mA)
30
Figure 26. Output Voltage vs. Input Current
High Diode Semiconductor
8
Typical Characteristics
MMUN2233
1000
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
V CE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOL TS)
1
25 ℃
0.001
25 ℃
100
75 ℃
TA = -25 ℃
0.01
75 ℃
TA = -25℃
10
V CE = 10 V
2
7
12
2
17
2
IC, COLLECTOR CURRENT (mA)
Figure 27. V CE(sat) vs. I C
27
32
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 28. DC Current Gain
High Diode Semiconductor
9
SOT-23
Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
10
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
High Diode Semiconductor
11
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