ONSEMI MMVL809T1

MMVL809T1
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid−state reliability in replacement of
mechanical tuning methods.
Features
•
•
•
•
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Controlled and Uniform Tuning Ratio
Surface Mount Package
Available in 8 mm Tape and Reel
Pb−Free Package is Available
4.5 − 6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Rating
Symbol
Value
Continuous Reverse Voltage
VR
20
Vdc
Peak Forward Current
IF
20
mAdc
1
CATHODE
Unit
2
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
200
1.57
mW
mW/°C
RqJA
635
°C/W
TJ, Tstg
150
°C
1
PD
PLASTIC
SOD−323
CASE 477
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
MARKING DIAGRAM
5K M G
G
5K = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMVL809T1
SOD−323 3000 / Tape & Reel
MMVL809T1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
MMVL809T1/D
MMVL809T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
Unit
V(BR)R
20
−
−
Vdc
IR
−
−
50
nAdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
MMVL809T1
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
CR, Capacitance Ratio
C2/C8 (Note 2)
f = 1.0 MHz
Min
Typ
Max
Typ
Min
Max
4.5
5.3
6.1
75
1.8
2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
TYPICAL CHARACTERISTICS
10
1000
CT , DIODE CAPACITANCE (pF)
9
Q, FIGURE OF MERIT
8
7
6
5
4
3
VR = 3 Vdc
TA = 25°C
100
2
1
0
0.5
1
2
3
4
5
8
10
10
0.1
15
f, FREQUENCY (GHz)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
R S , SERIES RESISTANCE (MHz)
VR = 3.0 Vdc
f = 1.0 MHz
800
600
0
10
VR, REVERSE VOLTAGE (VOLTS)
1000
400
1.0
0.2
0.4
0.6
0.8
1.0
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
1.2
VR = 3.0 Vdc
f = 1.0 MHz
f, FREQUENCY (GHz)
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Series Resistance
Figure 4. Diode Capacitance
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2
+100
+125
MMVL809T1
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Order Literature: http://www.onsemi.com/litorder
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291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone: 81357733850
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For additional information, please contact your
local Sales Representative.
MMVL809T1/D