Dynex MP03/130-20 Phase control dual scr, scr/diode module Datasheet

MP03 XXX 130 Series
MP03 XXX 130 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS4480-3.0
DS4480-4.0 January 2000
FEATURES
KEY PARAMETERS
2000V
VDRM
ITSM
4000A
IT(AV)(per arm)
134A
2500V
Visol
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
CIRCUIT OPTIONS
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
Code
APPLICATIONS
HBT
Circuit
■ Motor Control
■ Controlled Rectifier Bridges
HBP
■ Heater Control
■ AC Phase Control
HBN
VOLTAGE RATINGS
Type
Number
MP03/130-20
MP03/130-18
MP03/130-16
Repetitive
Peak
Voltages
VDRM VRRM
2000
1800
1600
PACKAGE OUTLINE
Conditions
Tvj = 125oC
IDRM = IRRM = 30mA
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available. For full description of
part number see "Ordering Instructions" on page 3.
Module type code: MP03.
See Package Details for futher information.
CURRENT RATINGS - PER ARM
Parameter
Symbol
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Halfwave, resistive load
Tcase = 75oC
Max.
Units
Tcase = 75oC
134
A
Tcase = 85oC
112
A
Theatsink = 75oC
114
A
Theatsink = 85oC
95
A
210
A
1/10
MP03 XXX 130 Series
SURGE RATINGS - PER ARM
Parameter
Symbol
ITSM
I 2t
Surge (non-repetitive) on-state current
I2t for fusing
Max.
Units
10ms half sine; VR = 0
Tj = 125oC
VR = 50% VRRM
4000
A
3200
A
10ms half sine; VR = 0
Tj = 125oC
VR = 50% VRRM
80000
A2s
51200
A 2s
Max.
Units
dc
0.21
o
C/W
halfwave
0.22
o
C/W
3 phase
0.23
o
C/W
Mounting torque = 5Nm
with mounting compound
0.05
o
Conditions
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Parameter
Thermal resistance - junction to case
per Thyristor or Diode
Conditions
Rth(c-hs)
Thermal resistance - case to heatsink
per Thyristor or Diode
Tvj
Virtual junction temperature
125
o
C
Tsto
Storage temperature range
-40 to 125
o
C
Visol
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
C/W
2.5
kV
Max.
Units
1.90
V
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
On-state voltage
At 450A, Tcase = 25oC - See Note 1
Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
30
mA
dV/dt
Linear rate of rise of off-state voltage
To 60% VDRM Tj = 125oC
200*
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 400A
Repetitive 50Hz
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC
100
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC - See Note 1
1.25
V
On-state slope resistance
At Tvj = 125oC - See Note 1
1.33
mΩ
VTM
IRRM/IDRM
rT
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP03 XXX 130 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
-
3.0
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
-
200
mA
VGD
Gate non-trigger voltage
VDRM = 5V, Tcase = 25oC
-
0.2
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
-
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
-
0.25
V
VRGM
Peak reverse gate voltage
-
5.0
V
IFGM
Peak forward gate current
-
4
A
PGM
Peak gate power
-
16
W
PG(AV)
Mean gate power
-
3
W
Anode positive with respect to cathode
ORDERING INSTRUCTIONS
Examples:
Part number is made up as follows:
MP03 HBT 130 - 18
MP
03
HBT
130
18
= Pressure contact module
= Outline type
= Circuit configuration code (see "circuit options" - front page)
= Nominal average current rating at Tcase = 75oC
= VRRM/100
MP03 HBP130-16
MP03 HBN130-20
MP03 HBT130-16
Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75oC if full rated current is to be achieved.
Power dissipation may be calculated by use of VT(TO) and rT
information in accordance with standard formulae. We can
provide assistance with calculations or choice of heatsink if
required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild
chemical etchant and then cleaned with a solvent to remove
oxide build up and foreign material. Care should be taken to
ensure no foreign particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.
3/10
MP03 XXX 130 Series
CURVES
Instantaneous on-state current IT - (A)
1000
800
600
Tj = 125˚C
400
200
0
0
1.0
2.0
3.0
Instantaneous on-state voltage VT - (V)
4.0
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
50
P
G
Gate voltage VG - (V)
M
=
10
W
Tj = 25˚C
Tj = -40˚C
Tj = 125˚C
1
0.1
0.01
0.1
1
Gate current IG - (A)
Fig. 2 Gate trigger characteristics
4/10
16
10
MP03 XXX 130 Series
0.3
Rth(j-c)
0.2
0.1
0
0.001
0.010
0.100
1.0
10
100
Time - (s)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
10
9
8
7
6
60
5
50
4
40
I2t
3
30
2
20
1
10
0
10
1
ms
1
2 3 45
I2t value - A2s x 103
Peak half sine wave on-state current - (kA)
Thermal Impedance - (˚C/W)
Rth(j-hs)
0
50
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
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MP03 XXX 130 Series
On-state power loss per device - (W)
400
350
300
250
180˚
120˚
200
90˚
60˚
150
30˚
100
50
0
0
25
50
75
100
Mean on-state current - (A)
125
150
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
On-state power loss per device - (W)
400
350
300
180˚
250
120˚
90˚
200
d.c.
60˚
150
30˚
100
50
0
0
25
50
75
100
Mean on-state current - (A)
125
150
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
6/10
Maximum permissible case temperature - (˚C)
MP03 XXX 130 Series
140
120
100
80
60
40
20
90˚
30˚
0
0
25
60˚
120˚
50
75
100
Mean on-state current - (A)
125
180˚
150
Maximum permissible case temperature - (˚C)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
80
60
40
20
30˚
0
0
25
60˚
50
75
100
Mean on-state current - (A)
90˚
120˚
125
180˚ d.c.
150
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
7/10
MP03 XXX 130 Series
600
Total power - (W)
500
0.12
0.10 0.08 0.04 0.02
0.15
R - Load
Rth(hs-a) ˚C/W
L - Load
400
0.20
300
200
0.30
0.40
100
0
20
0
40
60
80 100
0
Maximum ambient temperature - (˚C)
50
100
150
D.C. output current - (A)
200
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
600
Total power - (W)
500
400
300
200
0.10
0.15 0.12 0.08 0.04 0.02
Rth(hs-a) ˚C/W
R & L- Load
0.20
0.30
0.40
100
0
20
0
40
60
80 100
0
Maximum ambient temperature - (˚C)
50
100
150
D.C. output current - (A)
200
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03 XXX 130 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
6.5
5
18
50
38
5
K2
G2
G1
K1
80
2.8x0.8
2
3x M8
3
32
52
1
92
Recommended fixings for mounting:
Recommended mounting torque:
Recommended torque for electrical connections:
Maximum torque for electrical connections:
Nominal weight: 950g
M5 socket head cap screws.
5Nm (44lb.ins)
8Nm (70lb.ins)
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G1K1
K2 G2
2
1
3
HBT
G1K1
1
2
3
HBP
K2 G2
1
2
3
HBN
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MP03 XXX 130 Series
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Thyristor and diode measurement with a multi-meter
AN4853
Use of VTO, rT on-state characteristic
AN5001
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4480-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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