Dynex MP03XXX190-08 Phase control dual scr, scr/diode module Datasheet

MP03 XXX 190 Series
MP03 XXX 190 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS5099-3.0
DS5099-4.0 January 2000
FEATURES
KEY PARAMETERS
1200V
VDRM
ITSM
5500A
IT(AV)(per arm)
190A
2500V
Visol
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
CIRCUIT OPTIONS
■ International Standard Footprint
■ Alumina (non-toxic) Isolation Medium
Code
APPLICATIONS
HBT
Circuit
■ Motor Control
■ Controlled Rectifier Bridges
HBP
■ Heater Control
■ AC Phase Control
HBN
VOLTAGE RATINGS
Type
Number
PACKAGE OUTLINE
Conditions
Repetitive
Peak
Voltages
VDRM VRRM
MP03/190 - 12
1200
T(vj) = 125oC
MP03/190 - 10
1000
IDRM = IRRM = 30mA
MP03/190 - 08
800
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available. For full description of part
number see "Ordering Instructions" on page 3.
Module outline type code: MP03.
See Package Details for further information
CURRENT RATINGS - PER ARM
Parameter
Symbol
IT(AV)
IT(RMS)
Mean on-state current
RMS value
Conditions
Halfwave, resistive load
Tcase = 75oC
Max.
Units
Tcase = 75oC
190
A
Tcase = 85oC
158
A
Theatsink = 75oC
160
A
Theatsink = 85oC
133
A
300
A
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MP03 XXX 190 Series
SURGE RATINGS - PER ARM
Parameter
Symbol
ITSM
2
It
Surge (non-repetitive) on-state current
Max.
Units
VR = 0
5500
A
VR = 50% VRRM
4200
A
VR = 0
151000
A 2s
VR = 50% VRRM
88200
A 2s
Max.
Units
dc
0.21
o
C/W
halfwave
0.22
o
C/W
3 phase
0.23
o
C/W
Mounting torque = 5Nm
with mounting compound
0.05
o
C/W
Conditions
10ms half sine;
Tj = 125oC
10ms half sine;
Tj = 125oC
2
I t for fusing
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Parameter
Thermal resistance - junction to case
per Thyristor or Diode
Conditions
Rth(c-hs)
Thermal resistance - case to heatsink
per Thyristor or Diode
Tvj
Virtual junction temperature
125
o
C
Tsto
Storage temperature range
-40 to 125
o
C
Visol
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
2.5
kV
Max.
Units
1.30
V
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
On-state voltage
At 500A, Tcase = 25oC - See Note 1
Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
30
mA
dV/dt
Linear rate of rise of off-state voltage
To 60% VDRM Tj = 125oC
200*
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 400A
Repetitive 50Hz
Gate source 20V, 20Ω
Rise time 0.5µs, Tj =125oC
100
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC - See Note 1
0.88
V
On-state slope resistance
At Tvj = 125oC - See Note 1
0.70
mΩ
VTM
IRRM/IDRM
rT
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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MP03 XXX 190 Series
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDRM = 6V, Tcase = 25oC, RL = 6Ω
-
3.0
V
IGT
Gate trigger current
VDRM = 6V, Tcase = 25oC, RL = 6Ω
-
200
mA
VGD
Gate non-trigger voltage
VD = VDRM , Tj = 125˚C
-
0.20
V
VRGM
Peak reverse gate voltage
-
5.0
V
IFGM
Peak forward gate current
-
4
A
PGM
Peak gate power
-
16
W
PG(AV)
Mean gate power
-
3
W
Anode positive with respect to cathode
ORDERING INSTRUCTIONS
Examples:
Part number is made up of as follows:
MP03 HBT 190 - 12
MP
03
HBT
190
12
= Pressure contact module
= Outline type
= Circuit configuration code (see "circuit options" - front page)
= Nominal average current rating at Tcase = 75oC
= VRRM/100
MP03 HBP190 - 08
MP03 HBN190 - 12
MP03 HBT190 - 10
Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base temperature
at 75oC if full rated current is to be achieved. Power dissipation
may be calculated by use of VT(TO) and rT information in accordance
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish of
N6 (32µin) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.
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MP03 XXX 190 Series
CURVES
Instantaneous on-state current IT - (A)
2500
2000
1500
Tj = 125˚C
1000
500
0
0
1.0
2.0
3.0
Instantaneous on-state voltage VT - (V)
4.0
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
50
P
G
Gate voltage VG - (V)
M
10
16
W
Tj = 25˚C
Tj = -40˚C
Tj = 125˚C
1
0.1
0.01
0.1
1
Gate current IG - (A)
Fig. 2 Gate trigger characteristics
4/10
=
10
MP03 XXX 190 Series
0.3
Thermal Impedance - (˚C/W)
Rth(j-hs)
Rth(j-c)
0.2
0.1
0
0.001
0.010
0.100
1.0
10
100
Time - (s)
10
100
90
8
80
I2t
70
60
6
50
4
40
30
I2t value - A2s x 103
Peak half sine wave on-state current - (kA)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
20
2
10
0
1
10
ms
1
2 3 45
0
50
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRRM, Tcase = 125˚C (Thyristor or diode)
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MP03 XXX 190 Series
On-state power loss per device - (W)
400
350
180˚
300
250
90˚
200
120˚
60˚
30˚
150
100
50
0
0
50
100
150
200
Mean on-state current - (A)
250
300
Fig. 5 On-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60Hz
On-state power loss per device - (W)
400
350
300
180˚
250
d.c.
120˚
90˚
60˚
200
30˚
150
100
50
0
0
50
100
150
200
Mean on-state current - (A)
250
300
Fig. 6 On-state power loss per arm vs forward current at various conduction angles, square wave, 50/60Hz
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Maximum permissible case temperature - (˚C)
MP03 XXX 190 Series
140
120
100
80
60
40
20
30˚
0
0
50
60˚
90˚
120˚
100
150
200
Mean on-state current - (A)
180˚
250
300
Maximum permissible case temperature - (˚C)
Fig. 7 Maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60Hz
140
120
100
80
60
d.c.
40
20
30˚
0
0
50
60˚
90˚ 120˚
100
150
200
Mean on-state current - (A)
180˚
250
300
Fig. 8 Maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60Hz
7/10
MP03 XXX 190 Series
1200
0.04
Total power - (W)
1000
0.02 Rth(hs-a) ˚C/W
R - Load
L - Load
800
0.10 0.08
600
0.12
0.15
400
0.20
0.30
200
0.40
0
20
0
40
60
80 100
0
Maximum ambient temperature - (˚C)
100
200
300
D.C. output current - (A)
400
Fig. 9 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for
various values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
1200
Rth(hs-a) ˚C/W
1000
Total power - (W)
0.08
0.04 0.02
R & L- Load
800
0.10
0.12
600
400
0.15
0.20
200
0.30
0.40
0
20
0
40
60
80 100
0
Maximum ambient temperature - (˚C)
100
200
300
D.C. output current - (A)
400
Fig. 9 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various
values of heatsink thermal resistance.
(Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal).
8/10
MP03 XXX 190 Series
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
42.5
35
28.5
Ø5.5
5
6.5
5
18
50
38
5
K2
G2
G1
K1
80
2.8x0.8
2
3x M8
3
32
52
1
92
Recommended fixings for mounting:
Recommended mounting torque:
Recommended torque for electrical connections:
Maximum torque for electrical connections:
Nominal weight: 950g
M5 socket head cap screws.
5Nm (44lb.ins)
8Nm (70lb.ins)
9Nm (80lb.ins)
Module outline type code: MP03
CIRCUIT CONFIGURATIONS
G1K1
K2 G2
2
1
3
HBT
G1K1
1
2
3
HBP
K2 G2
1
2
3
HBN
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MP03 XXX 190 Series
http://www.dynexsemi.com
e-mail: [email protected]
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Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5099-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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