Toshiba MP4209 High power, high speed switching applications for printer head pin driver and pulse motor driver for solenoid driver Datasheet

MP4209
Silicon N Channel MOS Type (Four L2-π-MOSV in One)
TOSHIBA Power MOS FET Module
MP4209
Industrial Applications
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
•
4-V gate drivability
•
Small package by full molding (SIP 10 pins)
•
High drain power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
•
Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 3.5 S (typ.)
•
Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)
IDSS = 100 μA (max) (VDS = 100 V)
•
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
ID
3
Pulse
IDP
12
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.0
W
Drain power dissipation
(4device operation, Ta = 25°C)
PDT
4.0
W
Single pulse avalanche energy
(Note 1)
EAS
140
mJ
Avalanche current
IAR
3
A
EAR
0.2
EART
0.4
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
- device
operation
Repetitive avalanche
energy
(Note 2) 4device
operation
A
JEDEC
―
JEITA
―
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)
mJ
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
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MP4209
Array Configuration
7
9
6
8
10
3
5
4
2
1
Thermal Characteristics
Characteristics
Thermal resistance from channel to
ambient
Symbol
Max
Unit
ΣRth (ch-a)
31.2
°C/W
TL
260
°C
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for t = 10 s)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
―
±10
μA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
―
―
100
μA
Drain-source breakdown voltage
Gate threshold voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
―
―
V
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 2 A
―
0.36
0.45
VGS = 10 V, ID = 2 A
―
0.28
0.35
VDS = 10 V, ID = 2 A
1.5
3.5
―
S
―
280
―
pF
―
50
―
pF
―
105
―
pF
―
20
―
―
50
―
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V
f = 1 MHz
tr
ID = 2 A
10 V
VGS
ton
0V
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
50 Ω
Switching time
tf
toff
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
VOUT
RL = 25 Ω
Turn-on time
Ω
ns
―
40
―
―
170
―
―
13.5
―
nC
―
8.5
―
nC
―
5
―
nC
VDD ≈ 50 V
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs
VDD ≈ 80 V, VGS = 10 V
ID = 3 A
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MP4209
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
―
―
―
3
A
Pulse drain reverse current
IDRP
―
―
―
12
A
Diode forward voltage
VDSF
IDR = 3 A, VGS = 0 V
―
―
−1.5
V
Reverse recovery time
trr
IDR = 3 A, VGS = 0 V
―
100
―
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/μs
―
0.2
―
μC
Marking
MP4209
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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MP4209
ID – VDS
2.0
ID – VDS
10
8
Common source
6
Tc = 25°C
4
3
8
10
Drain current ID (A)
Drain current ID (A)
1.6
2.8
1.2
2.6
0.8
2.4
0.4
0
0
0.4
0.6
Drain-source voltage
0.8
Common source
6
10
Tc = 25°C
4
6
3.5
4
3
2
VGS = 2.2 V
0.2
8
VGS = 2.5 V
0
0
1.0
VDS (V)
2
4
6
8
Drain-source voltage
ID – VGS
VDS (V)
VDS – VGS
3.2
5
Common source
Common source
VDS (V)
VDS = 10 V
4
3
Drain-source voltage
Drain current ID (A)
10
2
25
1
100
Tc = 25°C
2.4
1.6
ID = 5 A
3
0.8
1.5
)
Ta = −55°C
0
0
1
2
3
Gate-source voltage
4
0
0
5
0.8
4
8
Gate-source voltage
VGS (V)
|Yfs| – ID
VDS = 10 V
Drain-source ON resistance
RDS(ON) (Ω)
Forward transfer admittance
|Yfs| (S)
20
VGS (V)
3
Common source
Ta = −55°C
3
100
25
1
0.5
0.3
0.1
16
RDS (ON) – ID
10
5
12
0.3
0.5
1
3
5
Common source
Tc = 25°C
1
0.5
0.3
10
0.1
0.1
10
Drain current ID (A)
VGS = 4 V
0.3
0.5
1
3
5
10
Drain current ID (A)
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MP4209
RDS (ON) – Tc
IDR – VDS
(Ω)
1.0
10
(A)
Drain-source ON resistance RDS (ON)
Common source
0.8
Drain reverse current IDR
1.5
0.8
0.6
ID = 3 A
0.4
3
VGS = 4 V
0.8, 1.5
VGS = 10 V
0.2
5
VGS = 10 V
3
3
1
0.5
1
0
0.3
Common source
Tc = 25°C
0
−80
−40
0
40
80
120
0.1
0
160
−0.5
Case temperature Tc (°C)
−1.0
−1.5
Drain-source voltage
Capacitance – VDS
−2.0
VDS (V)
Vth – Tc
1000
4
Common source
500
(pF)
Gate threshold voltage
Coss
100
Capacitance C
Vth (V)
Ciss
300
50
Crss
30
Common source
10
VGS = 0 V
f = 1 MHz
5 Ta = 25°C
3
0.1
0.3 0.5
1
3
5
Drain-source voltage
10
30 50
100
VDS = 10 V
3
ID = 1 mA
2
1
0
−80
VDS (V)
−40
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input/Output Characteristics
Safe Operating Area
20
100
60
12
40
8
20
0
0
Common source
VDD = 80 V
ID = 3 A
Tc = 25°C
VGS
4
8
12
16
4
Drain current ID (A)
16
VGS (V)
80
10
Gate-source voltage
Drain-source voltage
VDS (V)
IDP max
VDS
100 μs*
3
1 ms*
1
0.1
1
Total gate charge Qg (nC)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
3
10
30
Drain-source voltage
5
10 ms*
100 ms*
0.3
0
20
ID max
100
300
VDS (V)
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MP4209
Transient thermal resistance rth (°C/W)
rth – tw
300
100
30
Curves should be applied in thermal
limited area.
(Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
(1)
(2)
10
-No heat sink/ Attached on a circuit board(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
Circuit board
(4) 4-device operation
3
1
0.5
0.001
0.01
0.1
1
Pulse width
10
100
EAS – Tch
Avalanche energy EAS (mJ)
(W)
PDT
Total power dissipation
200
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
6
(4)
Circuit board
(3)
(2)
2
(1)
0
0
40
80
1000
tw (s)
PDT – Ta
8
4
(4)
(3)
120
160
160
120
80
40
0
25
200
50
Ambient temperature Ta (°C)
75
100
125
Channel temperature Tch
150
(°C)
ΔTch – PDT
Channel temperature increase
ΔTch (°C)
160
(1)
(2)
(3)
(4)
120
15 V
80
IAR
−15 V
VDD
Circuit board
Attached on a circuit board
40
0
0
BVDSS
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
1
2
3
Total power dissipation
4
PDT
TEST CIRCUIT
Peak IAR = 3 A, RG = 25 Ω
VDD = 50 V, L = 20 mH
5
VDS
TEST WAVE FORM
⎞
1 2 ⎛
B VDSS
⎟
Ε AS = ·L·I · ⎜⎜
⎟
2
V
−
DD ⎠
⎝ B VDSS
(W)
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MP4209
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-10-27
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