Data Sheet 4V Drive Nch + Pch MOSFET MP6M14 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Duel) Features 1) Low on-resistance. 2) Low voltage drive(4V drive). (6) (5) (4) (1) (2) (3) Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) MP6M14 Taping TR 1000 (6) (5) (4) ∗1 ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Tr1 : N-ch Tr2 : P-ch Unit Drain-source voltage VDSS 30 30 V Gate-source voltage VGSS 20 20 V Drain current Source current (Body Diode) Continuous ID 8.0 6 A Pulsed Continuous IDP Is *1 18 1.6 18 1.6 A A Pulsed Isp *1 18 Power dissipation Channel temperature Range of storage temperature PD Tch Tstg *2 18 A 2.0 W / TOTAL 1.4 150 55 to 150 W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.10 - Rev.A Data Sheet MP6M14 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA - 18 25 ID=8.0A, VGS=10V 21 29 m ID=8.0A, VGS=4.5V Static drain-source on-state resistance RDS (on) - 23 32 Forward transfer admittance l Yfs l 4.5 - - S VDS=10V, ID=8.0A Input capacitance Ciss - 470 - pF VDS=10V Output capacitance Coss - 170 - pF VGS=0V Reverse transfer capacitance Crss - 80 - pF f=1MHz Turn-on delay time td(on) - 8 - ns VDD 15V, ID=4.0A tr - 30 - ns VGS=10V td(off) - 39 - ns RL=3.75 tf - 9 - ns RG=10 Total gate charge Qg - 7.3 - nC VDD 15V, ID=8.0A Gate-source charge Gate-drain charge Qgs Qgd - 1.5 2.9 - nC nC VGS=5V Min. Typ. Max. Unit - - 1.2 V Rise time Turn-off delay time Fall time ID=8.0A, VGS=4.0V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=8.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.10 - Rev.A Data Sheet MP6M14 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Gate threshold voltage 30 - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V 1.0 - 2.5 V VDS=10V, ID=1mA - 27 38 ID=6.0A, VGS=10V - 40 56 m ID=3.0A, VGS=4.5V IDSS VGS (th) Static drain-source on-state resistance RDS (on)* Forward transfer admittance l Yfs l * Conditions - 46 64 4.0 - - S VDS=10V, ID=6.0A ID=3.0A, VGS=4.0V Input capacitance Ciss - 1040 - pF VDS=10V Output capacitance Coss - 160 - pF VGS=0V Reverse transfer capacitance Crss - 135 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns VDD 15V, ID=3.0A tr * - 15 - ns VGS=10V td(off) * - 96 - ns RL=5 tf * - 52 - ns RG=10 Total gate charge Qg * - 10.4 - nC VDD 15V, ID=6.0A Gate-source charge Gate-drain charge Qgs * Qgd * - 2.8 3.7 - nC nC VGS=5V Min. Typ. Max. Unit - - 1.2 V Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=6.0A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.10 - Rev.A Data Sheet MP6M14 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 8 8 VGS=3.0V 7 VGS=10.0V Ta=25°C Pulsed 7 VGS=4.5V 6 VGS=10.0V VGS=4.5V 6 VGS=4.0V Drain Current : ID [A] Drain Current : ID [A] Ta=25°C Pulsed VGS=2.8V 5 4 3 VGS=4.0V 5 VGS=3.0V VGS=2.5V 4 VGS=2.8V 3 2 2 VGS=2.5V 1 1 0 0 VGS=2.0V 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 8 10 1000 1000 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=10V pulsed 100 VGS=4.0V VGS=4.5V VGS=10V 10 1 0.01 0.1 1 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.01 100 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=4.5V pulsed VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.01 1 Drain Current : ID [A] Drain Current : ID [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Drain-Source Voltage : VDS [V] 0.1 1 10 10 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 1 0.01 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 4/10 2011.10 - Rev.A Data Sheet MP6M14 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VDS=10V pulsed VDS=10V pulsed 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 2.5 3.0 3.5 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 50 100 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed 10 Source Current : Is [A] 2.0 Gate-Source Voltage : VGS [V] Drain Current : ID [A] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 ID=4.0A 40 ID=8.0A 30 20 10 0 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 10 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 100 Ta=25°C VDD=15V ID=8A Pulsed 8 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 1.5 td(on) 10 6 4 2 tr 1 0 0.01 0.1 1 10 100 0 10 15 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 5/10 2011.10 - Rev.A Data Sheet MP6M14 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) （ VGS = 10V ） Ta=25°C f=1MHz VGS=0V 10 Drain Current : ID [ A ] Capacitance : C [pF] Coss 1000 Ciss 100 Crss PW = 100μs PW = 1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 10 DC Operation 0.01 0.01 0.1 1 10 100 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.10 - Rev.A Data Sheet MP6M14 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 6 6 VGS=-10.0V Ta=25°C Pulsed VGS=-4.5V 5 VGS=-4.0V 5 VGS=-3.5V VGS=-2.8V VGS=-3.0V 4 4 Drain Current : -ID [A] Drain Current : -ID [A] Ta=25°C Pulsed VGS=-3.0V 3 VGS=-2.8V 2 VGS=-10.0V VGS=-4.5V VGS=-4.0V 3 VGS=-3.5V 2 VGS=-2.5V 1 1 VGS=-2.5V 0 0 0 0.2 0.4 0.6 0.8 0 1 2 Drain-Source Voltage : -VDS [V] 8 10 1000 1000 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-10V pulsed VGS=-4.0V VGS=-4.5V VGS=-10V 100 10 1 0.01 0.1 1 10 100 10 1 0.01 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 Drain Current : -ID [A] 1 10 100 Drain Current : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=-4.5V pulsed VGS=-4V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Drain-Source Voltage : -VDS [V] 100 10 1 0.01 0.1 1 10 10 0.1 1 10 100 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 1 0.01 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 7/10 2011.10 - Rev.A Data Sheet MP6M14 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VDS=-10V pulsed VDS=-10V pulsed 10 Drain Currnt : -ID [A] Forward Transfer Admittance Yfs [S] 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 0.001 0.1 0.01 0.1 1 10 1.0 100 1.5 2.0 Drain Current : -ID [A] 2.5 3.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 200 10 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Source Current : -IS [A] VGS=0V pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 ID=-3.0A ID=-6.0A 100 0 0.01 0.0 0.5 1.0 0 1.5 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : -VGS [V] Source-Drain Voltage : -VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 12 VDD≒-15V VGS=-10V RG=10Ω Ta=25°C Pulsed td(off) Ta=25°C VDD=-15V ID=-6.0A Pulsed 10 Gate-Source Voltage : -VGS [V] tf Switching Time : t [ns] 3.5 Gate-Source Voltage : -VGS [V] 100 td(on) 10 tr 8 6 4 2 1 0 0.01 0.1 1 10 100 0 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 20 Total Gate Charge : Qg [nC] 8/10 2011.10 - Rev.A Data Sheet MP6M14 Fig.14 Maximum Safe Operating Area Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 100 Operation in this area is limited by RDS(on) (VGS = -10V) Ta=25°C f=1MHz VGS=0V Drain Current : -ID [ A ] Capacitance : C [pF] 10 1000 Ciss Coss 100 Crss PW = 100μs PW = 1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse:1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 10 0.01 0.1 1 10 0.01 0.01 100 0.1 1 DC Operation 10 100 Drain-Source Voltage : -VDS [ V ] Drain-Source Voltage : -VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.10 - Rev.A Data Sheet MP6M14 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL 10% D.U.T. VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A