<~)Emi-(2ona.uctoi ^Ptoaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MPS6573 (SILICON) thru MPS6576 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AUDIO TRANSISTORS . . . designed for audio amplifier applications. • DC Current Gain Specified for Audio Predriver Design 100 MAdc to 10 mAdc for MPS6573 and MPS6575 • DC Current Gain to Facilitate Differential Amplifier Design for Audio Input Stages — Grouping at 1.0 mAdc for MPS6574 and MPS6576 • Current-Gain - Bandwidth Product — fr - 200 MHz (Max) for Audio Frequency Design I MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Bale Voltage Emitter-Base Voltage Collector Current - Continuous Symbol MPS6673 MPSttSTS MPS6E74 MPS6S76 VCEO VCB VEB ic Unit 35 45 Vdc 3$ 45 Vdc 4.0 Vdc 100 mAdc Total Power Dissipation • TA • 2S°C Derate above 2S°C P[j 350 2.8 m«V mvV/°C Total Power Dissipation t> Tc - 25°C Derate above 26°C PD 'o "*« 8.0 mW/°C TJ'Tstg -SSto*1SO °C Opereting and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Ambient Thermal Resistance, Junction to Case SEATING^? PLANE j T~ T fr _ IIILe j| IP" STVlil: I ! , BASE 3. COLLECTOR /, 4 U t* 9 «*4 MAX 1 L MIN Q DIM MIN A 4.450 5.200 0.1 & & 3 180 4.190 0.1. £ 0 165 C D t K L N 4.3M 0.407 D407 12.700 1.150 - 5.^0 0.533 0 482 1,390 1.270 O.J D 0.0 6 0.0 6 0.5W 00*6 - ~D,210 0.021 D.019 Symbol Max Unit Q 3,430 - 0.135 R»JAll> 357 °C/W S 2.030 2.670 Q.OSC 125 °C/W MAX 0.20$ D05b 0.050 0.1 OS ft) R£JA '* measured with the deviced soldered into a typical printed c rcuit board. TO 92 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-f onductors encourages customers to verify that datasheets are current before placing orders Ounliiv MPS6573 thru MPS6576 (continued) ELECTRICAL CHARACTERISTICS <TA ' 2S°C unleu otherwise noud.) Symbol Characterbttie Win Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (0) (1C • 1 OmAdc, IB - 0) Collator Cutoff Current WCB " 3S Vdc, IE - 01 (Vca-45 Vdc, IE-O) MPS6573.MPS6574 MPS6675.MPS6S76 BVcEO ICBO MPS6S73.MPS6574 MPS6575.MPS6576 Emitter Cutoff Current (Vgp, • 4.0 Vdc, lc-0) Vdc 36 45 - - 100 100 - 100 100 200 500 100 125 150 200 150 18S 225 300 - 0.5 - 0.8 100 3SO - 12 nAdc nAdc 'EBO ON CHARACTERISTICS DC Current Gain dC • lOOnAdc. VCE - 5.0 Vdc) (If - 10 mAdc. VCE " 6.0 Vdc) (3) dC " 1,0 mAdc. VCE • B-° Wcl MPS6S73,MPS6S7S MPS6673,MPS6575 MPS6674.MPS6576 1» Yellow Blue Gr«en Silver -. HFE Collector-8mitter Saturetton Voltage (1C • 10 mAdc, IB * 1-0 mAdc) VCE(Mt) Bue-Eminer On Voltage (3) (1C- 10mAdc, VCE -S.O Vdc) ^BE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (3) (1C - 10 mAdc, VCE • 5.0 Vdc.f - 100 kHz) «T Output Capacitance !VCB - 12 Vde, l£ - 0, f - 100 kHz) Cob (2) The MPS6574 and MPS6B76 will be color coded to identify DC Currant Gain Categories. (3) Pul!eTMt: Pul» Width <300 HI. Duly Cycle <Z.O%. MHz pf=