Fairchild MPSA65 Pnp darlington transistor Datasheet

MPSA65
MMBTA65
PZTA65
C
C
E
E
C
B
TO-92
SOT-23
E
C
B
B
SOT-223
Mark: 2W
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCES
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current - Continuous
1.2
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
Units
MPSA65
625
5.0
83.3
*MMBTA65
350
2.8
**PZTA65
1,000
8.0
200
357
125
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
 1997 Fairchild Semiconductor Corporation
A65, Rev A
MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
I C = 100 µA, I B = 0
I CBO
Collector-Em itter Breakdown
Voltage
Collector-Cutoff Current
V CB = 30 V, I E = 0
100
nA
I EBO
Em itter-Cutoff Current
V EB = 8.0 V, I C = 0
100
nA
1.5
V
2.0
V
V (BR)CES
30
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
50,000
20,000
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
100
MHz
MPSA65 / MMBTA65 / PZTA65
PNP Darlington Transistor
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