Freescale MPX2010GP 10 kpa on-chip temperature compensated and calibrated silicon pressure sensor Datasheet

Pressure
Freescale Semiconductor
+
MPX2010
Rev 13, 10/2008
10 kPa On-Chip Temperature
Compensated and Calibrated
Silicon Pressure Sensors
MPX2010
Series
0 to 10 kPa (0 to 1.45 psi)
25 mV Full Scale
(Typical)
The MPX2010 series silicon piezoresistive pressure sensors provide a very
accurate and linear voltage output directly proportional to the applied pressure.
These sensors house a single monolithic silicon die with the strain gauge and
thin film resistor network integrated. The sensor is laser trimmed for precise
span, offset calibration and temperature compensation.
Application Examples
Features
•
•
•
•
•
•
•
•
Temperature Compensated over 0°C to +85°C
Ratiometric to Supply Voltage
Differential and Gauge Options
Available in Easy-to-Use Tape & Reel
Respiratory Diagnostics
Air Movement Control
Controllers
Pressure Switching
ORDERING INFORMATION
Package
Case
Device Name
Options
No.
Small Outline Package (MPXV2010 Series)
MPXV2010GP
Tray
1369
MPXV2010DP
Tray
1351
Unibody Package (MPX2010 Series)
MPX2010D
Tray
344
MPX2010DP
Tray
344C
MPX2010GP
Tray
344B
MPX2010GS
Tray
344E
MPX2010GSX
Tray
344F
MPAK Package (MPXM2010 Series)
MPXM2010D
Rail
1320
MPXM2010DT1
Tape and Reel
1320
MPXM2010GS
Rail
1320A
MPXM2010GST1 Tape and Reel 1320A
None
# of Ports
Single
Dual
Gauge
•
Device Marking
•
MPXV2010GP
MPXV2010DP
•
•
•
•
•
MPX2010D
MPX2010DP
MPX2010GP
MPX2010D
MPX2010D
•
•
MPXM2010D
MPXM2010D
MPXM2010GS
MPXM2010GS
•
•
•
•
•
•
•
•
•
•
•
•
•
SMALL OUTLINE PACKAGES
MPXV2010GP
CASE 1369-01
Pressure Type
Differential
Absolute
MPAK PACKAGES
MPXV2010DP
CASE 1351-01
MPXM2010D/DT1
CASE 1320-02
MPXM2010GS/GST1
CASE 1320A-02
UNIBODY PACKAGES
MPX2010D
CASE 344-15
MPX2010GP
CASE 344B-01
MPX2010DP
CASE 344C-01
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
MPX2010GS
CASE 344E-01
MPX2010GSX
CASE 344F-01
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 10 VDC, TA = 25°C unless otherwise noted, P1 > P2)
Characteristic
Symbol
Min
Typ
Max
Units
POP
0
—
10
kPa
Supply Voltage(2)
VS
—
10
16
VDC
Supply Current
IO
—
6.0
—
mAdc
Full Scale Span(3)
VFSS
24
25
26
mV
Offset(4)
VOFF
–1.0
—
1.0
mV
Sensitivity
ΔV/ΔΡ
—
2.5
—
mV/kPa
Linearity
—
–1.0
—
1.0
%VFSS
Pressure Hysteresis (0 to 10 kPa)
—
—
±0.1
—
%VFSS
Temperature Hysteresis (–40°C to +125°C)
—
—
±0.5
—
%VFSS
Temperature Coefficient on Full Scale Span
TCVFSS
–1.0
—
1.0
%VFSS
Temperature Coefficient on Offset
TCVOFF
–1.0
—
1.0
mV
ZIN
1300
—
2550
Ω
ZOUT
1400
—
3000
Ω
Response Time(5) (10% to 90%)
tR
—
1.0
—
ms
Warm-Up Time
—
—
20
—
ms
Offset Stability(6)
—
—
±0.5
—
%VFSS
Pressure
Range(1)
Input Impedance
Output Impedance
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range. Operating the device at a different range may induce additional error due to device
self-heating.
3. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
4. Offset (VOFF) is defined as the output voltage at the minimum rated pressure.
5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a
specified step change in pressure.
6. Offset stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
MPX2010
2
Sensors
Freescale Semiconductor
Pressure
Maximum Ratings
Table 2. Maximum Ratings(1)
Rating
Maximum Pressure (P1 > P2)
Burst Pressure (P1 > P2)
Storage Temperature
Operating Temperature
Symbol
Value
Unit
PMAX
75
kPa
PBURST
100
kPa
TSTG
–40 to +125
°C
TA
–40 to +125
°C
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Voltage Output versus Applied Differential Pressure
The output voltage of the differential or gauge sensor
increases with increasing pressure applied to the pressure
side (P1) relative to the vacuum side (P2). Similarly, output
voltage increases as increasing vacuum is applied to the
vacuum side (P2) relative to the pressure side (P1).
Figure 1. shows a block diagram of the internal circuitry on
the stand-alone pressure sensor chip.
VS
3
Thin Film
Temperature
Compensation
and Calibration
Circuitry
Sensing
Element
2
4
+VOUT
–VOUT
1
GND
Figure 1. Temperature Compensated and Calibrated
Pressure Sensor Schematic
MPX2010
Sensors
Freescale Semiconductor
3
Pressure
On-Chip Temperature Compensation and Calibration
Figure 2. shows the output characteristics of the MPX2010
series at 25°C. The output is directly proportional to the
differential pressure and is essentially a straight line.
The effects of temperature on full scale span and offset are
very small and are shown under Operating Characteristics.
This performance over temperature is achieved by having
both the shear stress strain gauge and the thin-film resistor
circuitry on the same silicon diaphragm. Each chip is
dynamically laser trimmed for precise span and offset
calibration and temperature compensation.
Figure 3. illustrates the differential/gauge die in the basic
chip carrier (Case 344). A silicone gel isolates the die surface
and wire bonds from the environment, while allowing the
pressure signal to be transmitted to the silicon diaphragm.
The MPX2010 series pressure sensor operating
characteristics and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media
other than dry air may have adverse effects on sensor
30
25
LINEARITY
Linearity refers to how well a transducer's output follows
the equation: Vout = Voff + sensitivity x P over the operating
pressure range. There are two basic methods for calculating
nonlinearity: (1) end point straight line fit (see Figure 4.) or
(2) a least squares best line fit. While a least squares fit gives
the “best case” linearity error (lower numerical value), the
calculations required are burdensome.
Conversely, an end point fit will give the “worst case” error
(often more desirable in error budget calculations) and the
calculations are more straightforward for the user.
Freescale’s specified pressure sensor linearities are based
on the end point straight line method measured at the
midrange pressure.
VS = 10 Vdc
TA = 25°C
P1 > P2
TYP
20
Output (mVdc)
performance and long term reliability. Contact the factory for
information regarding media compatibility in your application.
a
15
MAX
Span
Range
(Typical)
10
5
MIN
0
–5
kPa
PSI
2.5
0.362
5
0.725
7.5
1.09
10
1.45
Offset
(Typical)
Figure 2. Output vs. Pressure Differential
Least
Square
Deviation
Silicone
Die Coat
Stainless Steel
Metal Cover
Die
P1
Wire Bond
Lead Frame
P2
Epoxy
Case
Relative Voltage Output
Least Squares Fit
Exaggerated
Performance
Curve
Straight Line
Deviation
End Point Straight
Line Fit
RTV Die
Bond
Offset
0
Figure 3. Unibody Package: Cross Sectional Diagram
(not to scale)
50
Pressure (% Full Scale)
100
Figure 4. Linearity Specification Comparison
MPX2010
4
Sensors
Freescale Semiconductor
Pressure
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor
as the Pressure (P1) side and the Vacuum (P2) side. The
Pressure (P1) side is the side containing silicone gel which
isolates the die from the environment. The pressure sensor is
designed to operate with positive differential pressure
applied, P1 > P2.
The Pressure (P1) side may be identified by using the
following table.
Table 3. Pressure (P1) Side Delineation
Part Number
MPX2010D
Case
Type
344
Pressure (P1) Side Identifier
Stainless Steel Cap
MPX2010DP
344C
Side with Part Marking
MPX2010GP
344B
Side with Port Attached
MPX2010GS
344E
Side with Port Attached
MPX2010GSX
344F
Side with Port Attached
MPXV2010GP
1369
Side with Port Attached
MPXV2010DP
1351
Side with Part Marking
MPXM2010D/DTI
1320
Side with Part Marking
MPXM2010GS/GSTI
1320A Side with Port Attached
MPX2010
Sensors
Freescale Semiconductor
5
Pressure
PACKAGE DIMENSIONS
C
R
M
1
B
2
-A-
3
Z
4
DIM
A
B
C
D
F
G
J
L
M
N
R
Y
Z
N
L
1 2 3 4
PIN 1
-TSEATING
PLANE
J
F
G
F
Y
D 4 PL
0.136 (0.005)
STYLE 1:
PIN 1.
2.
3.
4.
M
T A
DAMBAR TRIM ZONE:
THIS IS INCLUDED
WITHIN DIM. "F" 8 PL
M
STYLE 2:
PIN 1.
2.
3.
4.
GROUND
+ OUTPUT
+ SUPPLY
- OUTPUT
STYLE 3:
PIN 1.
2.
3.
4.
VCC
- SUPPLY
+ SUPPLY
GROUND
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION -A- IS INCLUSIVE OF THE MOLD
STOP RING. MOLD STOP RING NOT TO EXCEED
16.00 (0.630).
INCHES
MILLIMETERS
MIN
MAX MIN
MAX
0.595
0.630 15.11
16.00
0.514
0.534 13.06
13.56
0.200
0.220
5.08
5.59
0.016
0.020
0.41
0.51
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.014
0.016
0.36
0.40
0.695
0.725 17.65
18.42
30˚ NOM
30˚ NOM
0.475
0.495 12.07
12.57
0.430
0.450 10.92
11.43
0.048
0.052
1.22
1.32
0.106
0.118
2.68
3.00
GND
-VOUT
VS
+VOUT
CASE 344-15
ISSUE AA
UNIBODY PACKAGE
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
-A-
-T-
U
L
R
H
N
PORT #1
POSITIVE
PRESSURE
(P1)
-Q-
B
1 2 3 4
PIN 1
K
-P0.25 (0.010)
J
M
T Q
S
S
F
C
G
D 4 PL
0.13 (0.005)
M
T S
S
Q
S
DIM
A
B
C
D
F
G
H
J
K
L
N
P
Q
R
S
U
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
1.145
1.175
29.08
29.85
0.685
0.715
17.40
18.16
0.305
0.325
7.75
8.26
0.016
0.020
0.41
0.51
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.182
0.194
4.62
4.93
0.014
0.016
0.36
0.41
0.695
0.725
17.65
18.42
0.290
0.300
7.37
7.62
0.420
0.440
10.67
11.18
0.153
0.159
3.89
4.04
0.153
0.159
3.89
4.04
0.230
0.250
5.84
6.35
0.220
0.240
5.59
6.10
0.910 BSC
23.11 BSC
STYLE 1:
PIN 1. GROUND
2. + OUTPUT
3. + SUPPLY
4. - OUTPUT
CASE 344B-01
ISSUE B
UNIBODY PACKAGE
MPX2010
6
Sensors
Freescale Semiconductor
Pressure
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
-AU
V
PORT #1
R
W
L
H
PORT #2
PORT #1
POSITIVE PRESSURE
(P1)
PORT #2
VACUUM
(P2)
N
-QB
SEATING
PLANE
SEATING
PLANE
1 2 3 4
PIN 1
K
-P-T-
-T-
0.25 (0.010)
M
T Q
S
S
F
J
G
D 4 PL
C
0.13 (0.005)
M
T S
S
Q
S
DIM
A
B
C
D
F
G
H
J
K
L
N
P
Q
R
S
U
V
W
INCHES
MILLIMETERS
MIN
MAX
MIN MAX
1.145
1.175
29.08 29.85
0.685
0.715
17.40 18.16
0.405
0.435
10.29 11.05
0.016
0.020
0.41
0.51
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.182
0.194
4.62
4.93
0.014
0.016
0.36
0.41
0.695
0.725
17.65 18.42
0.290
0.300
7.37
7.62
0.420
0.440
10.67 11.18
0.153
0.159
3.89
4.04
0.153
0.159
3.89
4.04
0.063
0.083
1.60
2.11
0.220
0.240
5.59
6.10
0.910 BSC
23.11 BSC
0.248
0.278
6.30
7.06
0.310
0.330
7.87
8.38
STYLE 1:
PIN 1.
2.
3.
4.
GROUND
+ OUTPUT
+ SUPPLY
- OUTPUT
CASE 344C-01
ISSUE B
UNIBODY PACKAGE
CASE 344E-01
ISSUE B
UNIBODY PACKAGE
MPX2010
Sensors
Freescale Semiconductor
7
Pressure
PACKAGE DIMENSIONS
-TC
A
E
-Q-
U
N
V
B
R
PORT #1
POSITIVE
PRESSURE
(P1)
PIN 1
-P0.25 (0.010)
M
T Q
M
4
3
2
1
S
K
J
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
J
K
N
P
Q
R
S
U
V
INCHES
MILLIMETERS
MIN
MAX MIN
MAX
1.080
1.120 27.43
28.45
0.740
0.760 18.80
19.30
0.630
0.650 16.00
16.51
0.016
0.020
0.41
0.51
0.160
0.180
4.06
4.57
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.014
0.016
0.36
0.41
0.220
0.240
5.59
6.10
0.070
0.080
1.78
2.03
0.150
0.160
3.81
4.06
0.150
0.160
3.81
4.06
0.440
0.460 11.18
11.68
0.695
0.725 17.65
18.42
0.840
0.860 21.34
21.84
0.182
0.194
4.62
4.92
G
D 4 PL
0.13 (0.005)
M
T P
S
Q
S
STYLE 1:
PIN 1.
2.
3.
4.
GROUND
V (+) OUT
V SUPPLY
V (-) OUT
CASE 344F-01
ISSUE B
UNIBODY PACKAGE
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Pressure
PACKAGE DIMENSIONS
PAGE 1 OF 2
CASE1351-01
ISSUE A
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PACKAGE DIMENSIONS
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CASE1351-01
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SMALL OUTLINE PACKAGE
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PACKAGE DIMENSIONS
PAGE 1 OF 2
CASE 1369-01
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SMALL OUTLINE PACKAGE
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Pressure
PACKAGE DIMENSIONS
PAGE 2 OF 2
CASE 1369-01
ISSUE B
SMALL OUTLINE PACKAGE
MPX2010
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Pressure
PACKAGE DIMENSIONS
CASE 1320-02
ISSUE B
MPAK
MPX2010
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Freescale Semiconductor
13
Pressure
PACKAGE DIMENSIONS
CASE 1320-02
ISSUE A
MPAK
MPX2010
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Pressure
PACKAGE DIMENSIONS
PIN 4
PIN 1
CASE 1320A-02
ISSUE A
MPAK
MPX2010
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Freescale Semiconductor
15
Pressure
PACKAGE DIMENSIONS
CASE 1320-02
ISSUE A
MPAK
MPX2010
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Freescale Semiconductor
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MPX2010
Rev. 13
10/2008
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